UMW-Youtai-Semiconductor-Co—Ltd–AO4410
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R
UMW
UMW AO4410
N-Channel
MOSFET
D
●
V
DS (V)
= 30V
●
I
D
= 18 A (V
GS
= 10V)
●
R
DS(ON)
＜
5.5m
Ω
(V
GS
= 10V)
●
R
DS(ON)
＜
6.2m
Ω
(V
GS
= 4.5V)
G
S
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Drain-Source Voltage
Symbol
Rating
Unit
V
V
DS
GS
30
±
12
18
Gate-Source Voltage
V
TA=25
℃
TA=70
℃
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
I
D
A
W
15
I
DM
80
3.1
TA=25
℃
TA=70
℃
t
≤
10s
P
D
2
40
Thermal Resistance.Junction- to-Ambient
R
thJA
thJL
Steady-State
75
℃
/W
℃
Thermal Resistance.Junction- to-Lead
Junction Temperature
R
24
T
J
150
-55 to 150
Storage Temperature Range
T
stg
1
UTD Semiconductor Co.,Limited
R
UMW
UMW AO4410
N-Channel
MOSFET
Parameter
Symbol
Test Conditions
I
D
=250 uA,
V
GS
=0V
Min
30
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
V
DSS
V
V
V
V
V
V
V
V
V
DS
=24V, V
GS
=0V
DS
=24V, V
GS
=0V, T
DS
=0V, V
GS
=
±
12V
1
5
Zero Gate Voltage Drain Current
I
DSS
uA
J
=55
℃
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
nA
V
±
100
1.5
5.5
7.4
6.2
V
GS(th)
DS
=V
GS
, I
D
=250uA
0.8
80
GS
=10V, I
GS
=10V, I
D
=18A
Static Drain-Source On-Resistance
R
DS(O
n
)
D
=18A
T
J
=125
℃
m
Ω
GS
=4.5V, I
GS
=4.5V, V
DS
=5V
DS
=5V, I =18A
D
=15A
On State Drain Current
Forward Transconductance
Input Capacitance
I
D(ON)
FS
iss
oss
A
S
g
D
102
C
9130 10500
625
V
V
V
GS
=0V, V
DS
=15V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
pF
Output Capacitance
C
Reverse Transfer Capacitance
Gate Resistance
C
rss
387
R
g
0.4
72.4
13.4
16.8
11
0.5
85
Ω
Total Gate Charge
Q
g
GS
=10V, V
DS
=15V, I
D
=18A
nC
Gate Source Charge
Q
gs
gd
Gate Drain Charge
Q
Turn-On DelayTime
t
d(on)
15
11
Turn-On Rise Time
t
r
7
V
GS
=10V, V
DS
=15V, R
L
=0.83
Ω
,
R
GEN
=3
Ω
ns
Turn-Off DelayTime
t
d(off)
99
135
19.5
40
Turn-Off Fall Time
t
f
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
rr
33
I
I
F
= 18A,
d
I
/d
t
= 100A/us
Q
22.2
30
nC
A
I
S
4.5
1
V
SD
S
=1A,V
GS
=0V
V
Note : The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
2
UTD Semiconductor Co.,Limited
R
UMW
UMW AO4410
N-Channel
MOSFET
60
60
50
40
30
20
10
0
10V
50
V
DS
=5V
2.5V
40
V
GS
=2V
30
20
10
0
125°C
25°C
2
0
1
2
3
4
5
0
0.5
1
1.5
GS
(Volts)
2.5
V
DS
(Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=18A
V
GS
=4.5V
V
GS
=10V
V
GS
=10V
0.8
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
I
D
(A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
16
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
12
8
I
D
=18A
125°C
125°C
25°C
25°C
4
0
0.0
0.2
0.4
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
V
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
UTD Semiconductor Co.,Limited
R
UMW
UMW AO4410
N-Channel
MOSFET
100000
10000
1000
5
V
DS
=15V
I
D
=18A
4
C
iss
3
2
1
0
C
oss
C
rss
100
0
10
20
30
40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
50
60
70
80
90
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
100
µ
s
80
60
40
20
0
1ms
10ms
0.1s
1s
10s
DC
T
J(Max)
=150°C
T
A
=25°C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
.
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=40°C/W
P
D
0.1
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
UTD Semiconductor Co.,Limited
R
UMW
UMW AO4410
N-Channel
MOSFET
P
A
C
KAGE
O
U
TL
INE
D
IMEN
S
I
O
N
S
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
5
UTD Semiconductor Co.,Limited
R
UMW
UMW AO4410
N-Channel
MOSFET
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW AO4410
6
UTD Semiconductor Co.,Limited
