UMW-Youtai-Semiconductor-Co—Ltd–AO4614

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

D2  

D1  

The AO4614 uses advanced trench technology  

MOSFETs to provide excellent R

DS(ON)

and low gate  

charge. The complementary MOSFETs may be used  

in H-bridge, Inverters and other applications.  

G2  

G1  

S2  

S1  

n-channel  

p-channel  

Product Summary  

N-Channel  

V

DS

(V) = 40V,  

I

D

= 6A (V

GS

=10V)  

R

DS(ON)  

P-Channel  

-40V  

-5A (VGS=-10V)  

S2  

G2  

S1  

G1  

D2  

D2  

D1  

D1  

1

2

3

4

8

7

6

5

< 20m

Ω

(V

GS

=10V)  

< 39m

Ω

(VGS= -10V)  

< 26m

Ω

(V

GS

=4.5V) <

 

50m

Ω

(VGS= -4.5V)  

Absolute Maximum Ratings

 

T

A

=25

°

C

u

nless otherwise noted  

Parameter  

Symbol  

Max n-channel  

Max p-channel  

Units  

Drain-Source Voltage  

V

DS  

40  

-40  

V

Gate-Source Voltage  

V

GS  

±20  

±20  

V

T

A

=25

°

C  

T

A

=70

°

C  

6

-5  

-4  

Continuous Drain  

Current

A  

Pulsed Drain Current

B  

Avalanche Current

B  

I

D  

5

A

I

DM  

I

AR  

E

AR  

30  

14  

-30  

-20  

Repetitive avalanche energy L=0.1mH

B  

9.8  

20  

mJ  

W

T

A

=25

°

C  

Power Dissipation  

T

A

=70

°

C  

2

2

P

D  

1.28  

-55 to 150  

1.28  

-55 to 150  

Junction and Storage Temperature Range  

T

J

, T

STG  

°C  

Thermal Characteristics: n-channel and p-channel  

Parameter  

Symbol  

Device  

Typ  

48  

Max  

Units  

°

C

/W  

°

C

/W  

°

C

/W  

Maximum Junction-to-Ambient

A  

t

≤

10s  

n-ch  

n-ch  

n-ch  

62.5  

110  

50  

R

θ

JA  

Maximum Junction-to-Ambient

A  

Steady-State  

74  

Maximum Junction-to-Lead

C  

Steady-State  

R

θ

JL  

R

θ

JA  

R

θ

JL  

35  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Ambient

A  

t

≤

10s  

p-ch  

p-ch  

p-ch  

48  

74  

35  

62.5  

110  

50  

°

C

/W  

°

C

/W  

°

C

/W  

Steady-State  

Maximum Junction-to-Lead

C  

Steady-State  

1

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

N Channel Electrical Characteristics (T

J

=25

°

C

u

nless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max  

Units  

I

D

=250

µ

A, V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

40  

V

V

1

5

I

DSS  

Zero Gate Voltage Drain Current  

µ

A  

T

J

=55

°

C  

V

DS

=0V, V

GS

= ±20V  

V

DS

=V

GS

I

D

=250

µ

A  

V

GS

=10V, V

DS

=5V  

I

GSS  

Gate-Body leakage current  

Gate Threshold Voltage  

On state drain current  

±100  

3

nA  

V

V

GS(th)  

I

D(ON)  

1.7  

30  

2.5  

24  

A

V

30  

38  

R

DS(ON)  

Static Drain-Source On-Resistance  

m

Ω  

V

GS

=4.5V, I

D

=5A  

V

DS

=5V, I

D

=6A  

I

S

=1A,V

GS

=0V  

30  

19  

g

FS  

V

SD  

I

S  

Forward Transconductance  

Diode Forward Voltage  

S

V

A

0.76  

1

2

Maximum Body-Diode Continuous Current  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

410  

516  

82  

650  

pF  

pF  

pF  

Ω

V

GS

=0V, V

DS

=20V, f=1MHz  

V

GS

=0V, V

DS

=0V, f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

43  

4.6  

SWITCHING PARAMETERS  

Q

g

(10V) Total

 

Gate Charge  

Q

g

(4.5V) Total

 

Gate Charge  

8.9  

4.3  

2.4  

1.4  

6.4  

3.6  

16.2  

6.6  

18  

10.8  

5.6  

nC  

nC  

nC  

nC  

ns  

V

I

D

=6A  

Q

gs  

Q

gd  

t

D(on)  

t

r  

Gate Source Charge  

Gate Drain Charge  

Turn-On DelayTime  

Turn-On Rise Time  

Turn-Off DelayTime  

Turn-Off Fall Time  

V

GS

=10V, V

DS

=20V, R

L

=3.3

Ω

,  

R

GEN

=3

Ω  

ns  

t

D(off)  

t

f  

ns  

ns  

t

rr  

I

F

=6A, dI/dt=100A/

µ

s  

I

F

=6A, dI/dt=100A/

µ

s  

24  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

ns  

Q

rr  

10  

nC  

A: The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C

. The  

value in any

 

given application depends on the user’s specific board design. The current rating is based on the t

 

≤

10s thermal resistance  

rating.  

B: Repetitive rating, pulse width limited by junction temperature.  

C. The R

θ

JA

is the sum of the thermal impedence from junction to lead R

θ

JL

and lead to ambient.  

9

12  

D. The static characteristics in Figures 1 to 6 are obtained using <300

µ

s pulses, duty cycle 0.5% max.  

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C

. The SOA  

curve provides a single pulse rating.  

2

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL  

40  

30  

25  

20  

15  

10  

5

30  

25  

20  

15  

10  

5

4.5V  

V

DS

=5V  

4V  

125

°

C  

V

GS

=3.5V  

25

°

C  

0

0

0

1

2

3

4

5

2

2.5  

3

3.5  

4

4.5  

V

V

Fig 1: On-Region Characteristics  

Figure 2: Transfer Characteristics  

36  

34  

32  

30  

28  

26  

24  

22  

20  

1.8  

1.6  

1.4  

1.2  

1

V

GS

=4.5V  

V

GS

=10V  

I

D

=6A  

V

GS

=4.5V  

I

D

=5A  

V

GS

=10V  

0.8  

0.6  

0

5

10  

15  

20  

-50 -25  

0

25  

50  

75  

100 125 150  

I

D

(A)  

Temperature (

°

C

)  

Figure 4: On-Resistance vs. Junction  

Temperature  

Figure 3: On-Resistance vs. Drain Current and  

Gate Voltage  

9

12  

80  

100  

10  

I

D

=6A  

70  

60  

50  

40  

30  

20  

10  

1

125

°

C  

25

°

C  

0.1  

125

°

C  

25

°

C  

0.01  

0.001  

0.0001  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

3

4

5

6

7

8

9

10  

V

SD

(Volts)  

V

GS

(Volts)  

Figure 5: On-Resistance vs. Gate-Source Voltage  

Figure 6: Body-Diode Characteristics  

3

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL  

800  

600  

400  

200  

0

10  

8

=20V  

D

= 6A  

C

iss  

6

4

C

rss  

2

C

oss  

0

0

10  

20  

30  

40  

0

2

4

6

8

10  

V

Q

g

(nC)  

Figure 7: Gate-Charge Characteristics  

Figure 8: Capacitance Characteristics  

1000  

100  

10  

100  

10  

T

J(Max)

=150

°

C  

T

A

=25

°

C  

10

µ

s  

100

µ

s  

1

R

DS(ON)  

1ms  

10ms  

limited  

0.1s  

0.1  

0.01  

1s  

10s  

T

J(Max)

=150

°

C  

T

A

=25

°

C  

DC  

1

0.00001  

0.001  

0.1  

10  

1000  

0.1  

1

10  

100  

V

DS

(Volts)  

Pulse Width (s)  

Figure 10: Single Pulse Power Rating Junction-to-  

Ambient (Note E)  

Figure 9: Maximum Forward Biased Safe  

Operating Area (Note E)  

9

12  

10  

D=T

on

/T  

In descending order  

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  

T

J,PK

=T

A

+P

DM

.Z

θ

JA

.R

θ

JA  

R

θ

JA

=74

°

C

/W  

1

0.1  

P

D  

T

on  

T

Single Pulse  

0.001 0.01  

0.01  

0.00001  

0.0001  

0.1  

1

10  

100  

1000  

Pulse Width (s)  

Figure 11: Normalized Maximum Transient Thermal Impedance  

4

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

P-Channel Electrical Characteristics (T

J

=25

°

C

u

nless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max  

Units  

I

D

= -250

µ

A, V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

-40  

V

V

-1  

-5  

I

DSS  

Zero Gate Voltage Drain Current  

µ

A  

T

J

=55

°

C  

V

DS

=0V, V

GS

= ±20V  

V

DS

=V

GS

I

D

= -250

µ

A  

V

GS

= -10V, V

DS

= -5V  

I

GSS  

Gate-Body leakage current  

Gate Threshold Voltage  

On state drain current  

±100  

-3  

nA  

V

V

GS(th)  

I

D(ON)  

-1.7  

-30  

-2  

A

V

GS

= -10V, I

D

= -5A  

39  

50  

R

DS(ON)  

Static Drain-Source On-Resistance  

m

Ω  

V

GS

= -4.5V, I

D

= -4A  

V

DS

= -5V, I

D

= -5A  

I

S

= -1A,V

GS

=0V  

g

FS  

V

SD  

I

S  

Forward Transconductance  

Diode Forward Voltage  

13  

S

V

A

-0.76  

-1  

-2  

Maximum Body-Diode Continuous Current  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

750  

940  

97  

1175  

pF  

pF  

pF  

Ω

V

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

72  

V

GS

=0V, V

DS

=0V, f=1MHz  

14  

SWITCHING PARAMETERS  

Q

g

(-10V) Total

 

Gate Charge  

Q

g

(-4.5V) Total Gate Charge  

17  

7.9  

3.4  

3.2  

6.2  

8.4  

44.8  

41.2  

21  

22  

10  

nC  

nC  

nC  

nC  

ns  

V

GS

= -10V, V

DS

= -20V,  

I

D

= -5A  

Q

gs  

Q

gd  

t

D(on)  

t

r  

Gate Source Charge  

Gate Drain Charge  

Turn-On DelayTime  

Turn-On Rise Time  

Turn-Off DelayTime  

Turn-Off Fall Time  

V

ns  

R

GEN

=3

Ω  

t

D(off)  

t

f  

ns  

ns  

t

rr  

I

F

= -5A, dI/dt=100A/

µ

s  

I

F

= -5A, dI/dt=100A/

µ

s  

27  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

ns  

Q

rr  

14  

nC  

A: The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with  

A

: The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C

.  

T

A

=25

°

C

. The value in any

 

given application depends

 

on the user’s specific board design. The current rating is based on the  

T

he value in any a given application depends on the user’s specific board design. The current rating is based on the t

 

≤

10s thermal  

t

≤

10s thermal resistance rating.  

r

esistance rating.  

B: Repetitive rating, pulse width limited by junction temperature.  

9

12  

B

: Repetitive rating, pulse width limited by junction temperature.  

C. The R

θ

JA

is the sum of the thermal impedence from junction to lead R

θ

JL

and lead to ambient.  

C

. The R

θ

JA

is the sum of the thermal impedence from junction to lead R  

and lead to ambient.  

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <

θ

3

J

0

L

0

µ

s pulses, duty cycle 0.5% max.  

D

. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µ

s pulses, duty cycle 0.5% max.  

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with  

E

. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C

. The  

T

A

=25

°

C

. The SOA curve provides a single pulse rating .  

S

OA curve provides a single pulse rating.  

5

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL  

30  

25  

20  

15  

10  

5

30  

25  

20  

15  

10  

5

V

DS

=-5V  

-5V  

-4V  

-4.5V  

V

GS

=-3.5V  

125

°

C  

25

°

C  

0

0

0

1

2

3

4

5

1.5  

2

2.5  

3

3.5  

4

4.5  

-V

DS

(Volts)  

-V

GS

(Volts)  

Fig 12: On-Region Characteristics  

Figure 13: Transfer Characteristics  

65  

60  

55  

50  

45  

40  

35  

30  

1.7  

1.5  

1.3  

1.1  

0.9  

0.7  

V

GS

=-10V  

I

D

=-5A  

V

GS

=-4.5V  

V

GS

=-4.5V  

I

D

=-4A  

V

GS

=-10V  

-50 -25  

0

25  

50  

75  

100 125 150  

0

5

10  

15  

20  

-I

D

(A)  

Temperature (

°

C

)  

Figure 15: On-Resistance vs. Junction  

Temperature  

Figure 14: On-Resistance vs. Drain Current and  

Gate Voltage  

9

12  

130  

110  

90  

100  

10  

I

D

=-5A  

1

125

°

C  

0.1  

70  

125

°

C  

25

°

C  

0.01  

0.001  

0.0001  

50  

25

°

C  

30  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

3

4

5

6

7

8

9

10  

-V

SD

(Volts)  

-V

GS

(Volts)  

Figure 16: On-Resistance vs. Gate-Source Voltage  

Figure 17: Body-Diode Characteristics  

6

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL  

10  

8

1400  

1200  

1000  

800  

600  

400  

200  

0

V

=-20V  

= -5A  

C

iss  

6

4

C

rss  

C

oss  

2

0

0

10  

20  

-V

DS

(Volts)  

30  

40  

0

3

6

9

12  

15  

18  

Q

g

(nC)  

Figure 19: Capacitance Characteristics  

Figure 18: Gate-Charge Characteristics  

1000  

100  

10  

100  

10  

T

J(Max)

=150

°

C  

T

A

=25

°

C  

10

µ

s  

100

µ

s  

1

R

DS(ON)  

limited  

1ms  

10ms  

0.1s  

0.1  

0.01  

1s  

10s  

T

J(Max)

=150

°

C  

T

A

=25

°

C  

DC  

1

0.1  

1

10  

100  

-V

DS

(Volts)  

0.00001  

0.001  

0.1  

10  

1000  

Pulse Width (s)  

Figure 20: Maximum Forward Biased Safe  

Operating Area (Note E)  

Figure 21: Single Pulse Power Rating Junction-  

to-Ambient (Note E)  

9

12  

10  

D=T

on

/T  

In descending order  

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  

T

J,PK

=T

A

+P

DM

.Z

θ

JA

.R

θ

JA  

R

θ

JA

=74

°

C

/W  

1

0.1  

P

D  

T

on  

T

Single Pulse  

0.001  

0.01  

0.00001  

0.0001  

0.01  

0.1  

1

10  

100  

1000  

Pulse Width (s)  

Figure 22: Normalized Maximum Transient Thermal Impedance  

7

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

P

A

C

KAGE

O

U

TL

INE

D

IMEN

S

I

O

N

S  

Dimensions In Millimeters  

Dimensions In Inches  

Min  

Symbol  

Min  

Max  

Max  

A

A1  

A2  

b

c

D

E

E1  

e

L

1.350  

0.100  

1.350  

0.330  

0.170  

4.700  

3.800  

5.800  

1.750  

0.250  

1.550  

0.510  

0.250  

5.100  

4.000  

6.200  

0.053  

0.004  

0.053  

0.013  

0.006  

0.185  

0.150  

0.228  

0.069  

0.010  

0.061  

0.020  

0.010  

0.200  

0.157  

0.244  

1.270(BSC)  

0.050(BSC)  

0.050  

0.400  

1.270  

0.016  

θ

0°  

8°  

0°  

8°  

8

UTD Semiconductor Co.,Limited  

R

UMW  

AO4614  

4

0V

P

-Channel and

 

N

-Channel MOSFET  

Ordering information  

Package  

SOP-8  

Deliverymode  

Tape and

 

reel  

Baseqty  

3000  

Order code  

UMW AO4614  

9

UTD Semiconductor Co.,Limited