UMW-Youtai-Semiconductor-Co—Ltd–AO4805
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R
UMW
Dual P-Chan
A
n
e
O
l
M
4
O
8
S
F
0
E
5
T
D1
D2
The AO4805 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
G1
G2
S1
S2
Features
V
DS
(V) = -30V
I
D
= -9A
R
DS(ON)
< 15m
Ω
(V
GS
= 10V)
R
DS(ON)
< 19m
Ω
(V
GS
= 4.5V)
1
2
3
4
8
7
6
5
S2
D2
G2
S1
G1
D2
D1
D1
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
V
DS
Drain-Source Voltage
-30
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
±20
-8
-6.9
V
T
A
=25°C
T
A
=70°C
I
D
I
DM
A
Pulsed Drain Current
B
-40
T
A
=25°C
T
A
=70°C
2
P
D
W
Power Dissipation
A
1.44
-55 to 150
T
J
, T
STG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
50
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
62.5
110
40
t
≤
10s
Steady-State
Steady-State
R
θ
JA
73
R
θ
JL
31
1
UTD Semiconductor Co.,Limited
R
UMW
Dual P-Chan
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n
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F
0
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5
T
Electrical Characteristics (T =25°C unless otherwise noted)
J
Drain-Source Breakdown Voltage
Conditions
I
D
=-250
µ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
Min
-30
Typ
Max Units
BV
DSS
V
-1
-5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
V
DS
=V
GS
I
D
=-250
µ
A
V
GS
=-10V, V
DS
=-5V
±100
-2.5
nA
V
A
GS
=±20V
-1
40
-1.5
12
V
V
GS
=-10V, I
D
=-8A
GS
=-4.5V, I
D
=-5A
15
19
m
Ω
m
Ω
S
V
A
R
DS(ON)
Static Drain-Source On-Resistance
16
21
-0.75
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
DS
=-5V, I
D
=-8A
I
S
=-1A,V
GS
=0V
16
-1
-2.6
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2076
503
302
2
39
8
11.4
12.7
7
25.2
12
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Q
g
nC
nC
nC
ns
ns
ns
ns
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
Ω
,
R
GEN
=3
Ω
t
rr
Q
rr
I
F
=-8A, dI/dt=100A/
µ
s
I
F
=-8A, dI/dt=100A/
µ
s
32
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
value in any a given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The
R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
SOA curve provides a single pulse rating.
2
UTD Semiconductor Co.,Limited
R
UMW
Dual P-Chan
A
n
e
O
l
M
4
O
8
S
F
0
E
5
T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
50
30
20
10
0
-8V
-6V
-10V
V
DS
=-5V
-5.5V
-5V
-4.5V
125°C
25°C
V
GS
=-4V
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-V
DS
(Volts)
Fig 1: On-Region Characteristics
30
25
20
15
10
5
1.4
1.3
1.2
1.1
1
I
D
=-8A
V
GS
=-6V
V
GS
=-10V
V
=-10V
V
GS
=-4.5V
0.9
0.8
0
0
5
10
15
20
25
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
50
40
30
20
10
0
I
D
=-8A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
UTD Semiconductor Co.,Limited
R
UMW
Dual P-Chan
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n
e
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l
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0
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T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
V
DS
=-15V
I
D
=-8A
2500
2000
1500
1000
500
C
iss
6
C
oss
4
C
rss
2
0
0
0
5
10
15
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
T
J(Max)
=150°C
T
A
=25°C
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
100
µ
s
1ms
R
DS(ON)
10ms
1
0.1
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
P
0.1
T
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
UTD Semiconductor Co.,Limited
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UMW
Dual P-Chan
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n
e
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l
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4
O
8
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F
0
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5
T
P
A
C
KAGE
O
U
TL
INE
D
IMEN
S
I
O
N
S
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
5
UTD Semiconductor Co.,Limited
R
UMW
Dual P-Chan
A
n
e
O
l
M
4
O
8
S
F
0
E
5
T
(“xxxx”
代表年份周期
)
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW AO4805
6
UTD Semiconductor Co.,Limited
