UMW-Youtai-Semiconductor-Co—Ltd–AO4807
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R
UMW
AO4807
D
ual P-Channel MOSFET
General Description
D1
D2
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
G1
G2
S1
S2
Features
V
DS
(V) = -30V
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
I
D
= -6 A (V
GS
= -10V)
R
DS(ON)
< 21m
Ω
(V
GS
= 10V)
R
DS(ON)
< 30m
Ω
(V
GS
= 4.5V)
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
DS
Drain-Source Voltage
-30
V
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
±20
V
A
T
A
=25°C
T
A
=70°C
-6
I
D
-5
-30
Pulsed Drain Current
B
I
DM
T
A
=25°C
T
A
=70°C
2
P
D
W
Power Dissipation
A
1.44
T
J
, T
STG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
Typ
48
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
t
≤
10s
R
θ
JA
Steady-State
Steady-State
74
R
θ
JL
35
1
UTD Semiconductor Co.,Limited
R
UMW
AO4807
D
ual P-Channel MOSFET
Electrical Characteristics (T =25°C unless otherwise noted)
J
Parameter
Conditions
Min
Typ
Max Units
BV
DSS
Drain-Source Breakdown Voltage
I
D
=-250
µ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
-30
V
-1
I
DSS
Zero Gate Voltage Drain Current
µ
A
-5
T
J
=55°C
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250
µ
A
V
GS
=-10V, V
DS
=-5V
±100
-2.5
nA
V
V
GS(th)
I
D(ON)
-1
-1.5
-30
A
m
Ω
m
Ω
V
GS
=-10V, I
D
=-6A
19
25
25
30
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-5A
g
FS
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-6A
I
S
=-1A,V
GS
=0V
13
S
V
V
SD
I
S
-0.76
-1
Maximum Body-Diode Continuous Current
Input Capacitance
-4.2
A
C
iss
C
oss
C
rss
R
g
920
190
122
3.6
18.5
9.6
2.7
4.5
7.7
5.7
20.2
9.5
20
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-6A
Turn-On DelayTime
Turn-On Rise Time
V
GS
=-10V, V
DS
=-15V, R
L
=2.7
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
Turn-Off DelayTime
Turn-Off Fall Time
t
rr
I
F
=-6A, dI/dt=100A/
µ
s
I
F
=-6A, dI/dt=100A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Q
rr
8.8
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
value in any given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The
R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The
SOA curve provides a single pulse rating.
2
UTD Semiconductor Co.,Limited
R
UMW
AO4807
D
ual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
25
20
15
10
5
-4.5V
-5V
V
DS
=-5V
-4V
-3.5V
125°C
V
GS
=-3V
3
25°C
3.5
0
0
0
1
2
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
1.60
1.40
1.20
1.00
0.80
I
D
=-6A
55
50
45
40
35
30
25
20
15
10
V
GS
=-4.5V
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-10V
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
I
D
=-6A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
UTD Semiconductor Co.,Limited
R
UMW
AO4807
D
ual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
8
I
D
=-6A
1250
1000
750
500
250
0
C
iss
6
4
C
oss
C
rss
2
0
0
4
8
12
16
20
0
5
10
15
20
25
30
-Q
g
(nC)
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
T
J(Max)
=150°C, T
A
=25°C
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
100
µ
s
R
DS(ON)
limited
0.1s
1ms
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
1
P
D
0.1
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
4
UTD Semiconductor Co.,Limited
R
UMW
AO4807
D
ual P-Channel MOSFET
P
A
C
KAGE
O
U
TL
INE
D
IMEN
S
I
O
N
S
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
5
UTD Semiconductor Co.,Limited
R
UMW
AO4807
D
ual P-Channel MOSFET
Marking
(“xxxx”
代表年份周期
)
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW AO4807
6
UTD Semiconductor Co.,Limited
