UMW-Youtai-Semiconductor-Co—Ltd–AOD417-UMW
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R
AOD417
UMW
-30
V
P
-Channel MOSFET
The AOD417 uses advanced technology to
provide excellent R
DS(ON)
, l
ow gate charge and
low gate resistance. ellent thermal resistance
of the DPAK package, this device is well
suited for high current load applications.
Features
•
•
V
DS
(V) =-30V
I
D
=-25A (
V
G
S
= 10V)
D
•
•
•
•
R
DS(ON)
<34m
Ω
(V
GS
=- 10V)
R
DS(ON)
<55m
Ω
(V
GS
=- 4.5V)
RoHS Compliant
Halogen Free*
G
S
Absolute Maximum Ratings
T =25
°
C
u
nless otherwise noted
A
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
±20
-25
V
A
G
T
A
=25
°
C
Continuous Drain
Current
B,G
T
A
=100
°
C
I
D
-20
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
C
I
DM
I
AR
E
AR
-60
-14
A
30
mJ
T
C
=25
°
C
Power Dissipation
B
T
C
=100
°
C
50
P
D
W
25
T
A
=25
°
C
2.5
P
DSM
W
°C
Power Dissipation
A
1.6
T
A
=70
°
C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
3
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
D
t
≤
10s
R
θ
JA
Steady-State
Steady-State
R
θ
JC
2.5
UTD Semiconductor Co.,Limited
1
R
AOD417
UMW
-30
V
P
-Channel MOSFET
Electrical Characteristics (T
=25
°
C
u
nless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-30
V
V
DS
=-24V, V
GS
=0V
-1
-5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250
µ
A
V
GS
=-10V, V
DS
=-5V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
V
GS(th)
I
D(ON)
-1
-1.9
27
-60
A
m
Ω
V
V
GS
=-10V, I
D
=-20A
GS
=-4.5V, I
D
=-7A
34
55
R
DS(ON)
Static Drain-Source On-Resistance
40
18
m
Ω
S
V
DS
=-5V, I
D
=-20A
I
S
=-1A,V
GS
=0V
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
-0.75
-1
-6
V
Maximum Body-Diode Continuous Current
Input Capacitance
A
C
iss
C
oss
C
rss
R
g
920
140
90
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
6
9
Q
g
(10V) Total
Gate Charge (10V)
Q
g
(4.5V) Total
Gate Charge (4.5V)
16.2
8.2
2.9
3.6
8
nC
nC
nC
nC
ns
ns
ns
ns
V
GS
=-10V, V
DS
=-15V, I
D
=-20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=0.75
Ω
,
30
R
GEN
=0.75
Ω
t
D(off)
t
f
22
26
t
rr
I
F
=-20A, dI/dt=100A/
µ
s
I
F
=-20A, dI/dt=100A/
µ
s
23
14
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
nC
A: The value of R
θ
JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25
°
C
. The Power dissipation P
DSM
is based on R
θ
JA
(<10s) and the maximum allowed junction temperature of 150
°
C
. The value in any given
application depends on the user’s specific board design, and the maximum temperature of 175
°
C
m
ay be u sed if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C
, using junction-to-case thermal resistance,
and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C
.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175
°
C
.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C
. The SOA
curve provides a single pulse rating.
UTD Semiconductor Co.,Limited
2
R
AOD417
UMW
-30
V
P
-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
60
50
40
30
20
10
0
-10V
V
DS
=-5V
-6V
-4.5V
V
GS
=-3.5V
125
°
C
2.5
25
°
C
-40
°
C
3.5
0
0
1
2
3
4
5
1
1.5
2
3
4
4.5
5
-V
DS
(Volts)
-V
GS
(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
60
1.6
1.4
1.2
1
55
50
45
40
35
30
25
20
V
GS
=-10V
I
D
=-20A
V
GS
=-4.5V
V
GS
=-4.5V
I
D
=-7A
V
GS
=-10V
0.8
0.6
-50 -25
0
25
50
75 100
125 150 175
0
5
10
15
20
25
Temperature (
°
C
)
-I
D
(A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
I
D
=-20A
70
60
50
40
30
20
125
°
C
125
°
C
-40
°
C
25
°
C
25
°
C
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
UTD Semiconductor Co.,Limited
3
R
AOD417
UMW
-30
V
P
-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
1500
1250
1000
750
500
250
0
V
DS
=-15V
I
D
=-20A
C
iss
6
4
C
rss
2
C
oss
0
0
5
10
15
20
25
30
0
3
6
9
12
15
18
-Q
g
(nC)
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
160
120
80
T
J(Max)
=175
°
C
T
C
=25
°
C
10
µ
s
100
µ
s
R
DS(ON)
limited
DC
0.1
T
J(Max)
=175
°
C
T
C
=25
°
C
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
c
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=3
°
C
/W
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
(Note F)
UTD Semiconductor Co.,Limited
4
R
AOD417
UMW
-30
V
P
-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
50
40
30
20
10
0
T
A
=25
°
C
60
40
T
A
=150
°
C
20
0
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
T
CASE
(
°
C
)
Figure 13: Power De-rating (Note B)
60
30
25
20
15
10
5
T
A
=25
°
C
50
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
CASE
(
°
C
)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=50
°
C
/W
0.1
0.01
P
D
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
UTD Semiconductor Co.,Limited
5
R
AOD417
UMW
-30
V
P
-Channel MOSFET
Package Mechanical Data
TO-252
E
A
B2
Dimensions
Inches
C2
V 1
Ref.
Millimeters
Typ.
Typ.
Min.
2.10
0
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
B
G
5.30REF
0.209REF
D1
E
DETAIL A
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
V1
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
V 2
H
L
V1
1.65
L2
V1
V2
E1
L2
7°
7°
DETAIL A
0°
6°
0°
6°
Marking
Ordering information
Package
Deliverymode
Baseqty
Order code
reel
Tape and
TO-252
2500
UMW AOD417
UTD Semiconductor Co.,Limited
6
