UMW-Youtai-Semiconductor-Co—Ltd–AOD4185-UMW
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R
UMW
AOD4185
P-Channel MOSFET
●
V
DS (V)
=-40V
●
I
D
= -40A
●
R
DS(ON)
＜
15m
Ω
(V
GS
=-10V)
●
R
DS(ON)
＜
20m
Ω
(V
GS
=-4.5V)
General Description
The AOD4185 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. With the
excellent thermal resistance of the DPAK/IPAK
package, this device is well suited for high current
applications.
D
G
S
Absolute Maximum Ratings
T
C
=25
°
C
u
nless otherwise noted
P
a
r
a
m
e
t
e
r
S
y
m
b
o
l
M
a
x
i
m
u
m
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
B,H
Pulsed Drain Current
C
Avalanche Current
C
V
DS
V
GS
-40
±20
-40
-31
V
V
T
C
=25
°
C
T
C
=100
°
C
I
D
A
I
DM
I
AR
E
AR
-115
-42
88
Repetitive avalanche energy L=0.1mH
C
mJ
W
T
C
=25
°
C
62.5
31
P
D
Power Dissipation
B
T
C
=100
°
C
T
A
=25
°
C
2.5
1.6
P
DSM
T
J
, T
STG
Power Dissipation
A
T
A
=70
°
C
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
41
2
Max
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A,G
t
≤
10s
20
50
2.4
R
θ
JA
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Case
D,F
Steady-State
Steady-State
R
θ
JC
1
UTD Semiconductor Co.,Limited
R
UMW
AOD4185
P-Channel MOSFET
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAM
ETERS
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain
-Source Breakdown Voltage
-40
V
V
DS
=-40V, V
GS
=0V
-1
-5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=-250
µ
A
V
GS
=-10V, V
DS
=-5V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
V
GS(th)
I
D(ON)
-1.7
-1.9
-115
A
V
GS
=-10V, I
D
=-20A
12.5
15
20
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
V
GS
=-4.5V, I
D
=-15A
V
DS
=-5V, I
D
=-20A
I
S
=-1A,V
GS
=0V
16
50
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
S
V
A
-0.72
-1
Maximum Body-Diode Continuous Current
-20
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
2550
280
190
4
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-20V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
2.5
6
SWITCHING PARAMETERS
Q
g
(-10V) Total
Gate Charge
Q
g
(-4.5V) Total Gate Charge
42
18.6
7
55
nC
V
GS
=-10V, V
DS
=-20V,
I
D
=-20A
Q
gs
Q
gd
Gate Source Charge
Gate Drain Charge
nC
nC
8.6
t
r
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-20V, R
L
=1
Ω
,
20
55
30
38
47
ns
ns
ns
R
GEN
=3
Ω
t
D(off)
t
f
t
rr
I
F
=-20A, dI/dt=100A/
µ
s
I
F
=-20A, dI/dt=100A/
µ
s
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
nC
A: The value of R
θ
JA
is measured with the device in a still air environment with T
A
=25
°
C. The power dissipation P
DSM
and current rating I
DSM
are
based on T
J(MAX)
=150
°
C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
H. The
maximum current rating is limited by bond-wires.
2
UTD Semiconductor Co.,Limited
R
UMW
AOD4185
P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
80
60
40
20
0
100
V
DS
=-5V
-6.0V
-10V
-4.5V
-4.0V
80
60
40
20
0
`
125
°
C
V
GS
=-3.5V
25
°
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
5
-V
DS
(Volts)
-V
GS
(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
24
2
1.8
1.6
1.4
1.2
1
22
20
18
16
14
12
1
0
V
GS
=-10V
I
D
=-20A
V
GS
=-4.5V
V
GS
=-10V
V
GS
=-4.5V
I
D
=-15A
0.8
0
.
6
0
1
0
2
0
3
0
4
0
5
0
6
0
–
50 75
100
1
2
5
1
5
0
1
7
5
2
0
0
-I
D
(A)
Temperature (
°
C
)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
45
40
35
30
25
20
15
10
I
D
=-20A
10
1
0.1
125
°
C
125
°
C
25
°
C
0.01
25
°
C
0.001
0.0001
0.00001
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
UTD Semiconductor Co.,Limited
R
UMW
AOD4185
P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
3000
2500
2000
1500
1000
500
C
iss
6
4
C
rss
2
C
oss
0
0
0
5
10
15
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
25
30
35
40
0
5
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
10000
1000
100
1000
100
10
T
J(Max)
=175
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
1
DC
T
J(Max)
=175
°
C
T
C
=
2
5
°
C
0
.
1
1
0
0
.
1
1
1
0
1
0
0
0.00001 0.0001
0
.
0
0
1
0
.
0
1
0
.
1
1
-V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=2.4
°
C/W
1
0.1
P
D
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.01
0.1
1
4
UTD Semiconductor Co.,Limited
R
UMW
AOD4185
P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
50
40
30
20
10
0
50
40
30
20
10
0
0
25
50
75
T
CASE
(
°
C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0
25
50
75
100
125
150
175
T
CASE
(
°
C)
Figure 13: Current De-rating (Note B)
10000
T
J(Max)
=150
°
C
1000
100
10
1
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=50
°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
P
D
0.01
T
on
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
0.1
1
10
100
1000
5
UTD Semiconductor Co.,Limited
R
UMW
AOD4185
P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
t
d(off)
t
d(on)
t
r
f
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
E
A
A
= 1/2
L
L
I
A
I
2
2
R
R
R
L
Vds
Vds
Id
Vgs
–
BV
DSS
Vgs
Vdd
VDC
+
Id
Rg
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
DUT
Vgs
t
rr
Vds –
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Ig
6
UTD Semiconductor Co.,Limited
R
UMW
AOD4185
P-Channel MOSFET
Package M
echanical Data
TO-252
E
A
B2
Dimensions
C2
V 1
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.10
0
Max.
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
2.50
0.10
0.86
5.48
0.60
0.58
6.30
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
B
G
5.30REF
0.209REF
D1
E
DETAIL A
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
V1
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
V 2
H
L
V1
1.65
L2
V1
V2
E1
L2
7°
7°
DETAIL A
0°
6°
0°
6°
Marking
Ordering information
Package
TO-252
Deliverymode
reel
Baseqty
2500
Order code
Tape and
UMW AOD4185
7
UTD Semiconductor Co.,Limited
