UMW-Youtai-Semiconductor-Co—Ltd–AOD4189-UMW
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R
UMW
AOD4189
P-Channel MOSFET
●
V
DS (V)
=-40V
●
I
D
= -40A
●
R
DS(ON)
＜
22m
Ω
(V
GS
=-10V)
●
R
DS(ON)
＜
29m
Ω
(V
GS
=-4.5V)
General Description
D
The AOD4189 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. With the excellent thermal resistance of the
TO-252 package, this device is well suited for high
current load applications.
G
S
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
-40
±20
-40
V
Gate-Source Voltage
Continuous Drain
Current
B,H
Pulsed Drain Curren
t
C
Avalanche Current
C
V
GS
V
T
C
=25°C
T
C
=100°C
I
D
-28
A
I
DM
I
AR
E
AR
-50
-35
Repetitive avalanche energy L=0.1m
H
C
61
mJ
W
°C
T
C
=25°C
62.5
31
P
D
Power Dissipation
B
T
C
=100°C
T
A
=25°C
2.5
P
DSM
Power Dissipation
A
1.6
T
A
=70°C
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
15
41
2
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A,G
t ≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Case
D,F
Steady-State
Steady-State
50
R
θ
JC
2.4
1
UTD Semiconductor Co.,Limited
R
UMW
AOD4189
P-Channel MOSFET
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=-250
µ
A, V
GS
=0V
-40
V
V
DS
=-40V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain Current
µ
A
-5
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
V
DS
=V
GS
I
D
=-250
µ
A
V
GS(th)
I
D(ON)
-1.7
-50
-1.9
V
GS
=-10V, V
DS
=-5V
A
18
23
22
29
V
GS
=-10V, I
D
=-12A
V
GS
=-4.5V, I
D
=-8A
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
V
DS
=-5V, I
D
=-12A
I
S
=-1A,V
GS
=0V
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
35
S
V
A
-0.74
-1
Maximum Body-Diode Continuous Current
-20
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1870
185
155
4.5
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
2.5
6.5
SWITCHING PARAMETERS
Q
g
(-10V) Total
Gate Charge
Q
g
(-4.5V) Total
Gate Charge
31.4
7.9
7.6
6.2
10
41
10
nC
V
GS
=-10V, V
DS
=-20V,
I
D
=-12A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
nC
nC
ns
ns
ns
ns
V
GS
=-10V, V
DS
=-20V, R
L
=1.6
Ω
,
18
R
GEN
=3
Ω
t
D(off)
t
f
38
24
t
rr
I
F
=-12A, dI/dt=100A/
µ
s
I
F
=-12A, dI/dt=100A/
µ
s
32
42
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
30
nC
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation
P
DSM
and current rating I
DSM
are
based on T
J(MAX)
=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using t
≤
300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of
T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C.
H. The
maximum current rating is limited by bond-wires.
2
UTD Semiconductor Co.,Limited
R
UMW
AOD4189
P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
V
DS
=-5V
-10V
-4.5V
-6.0V
-4.0V
V
GS
=-3.5V
125°C
25°C
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
-V
DS
(Volts)
-V
GS
(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
2
28
26
24
22
20
18
16
V
GS
=-10V
I
D
=-12A
1.8
1.6
1.4
1.2
1
V
GS
=-4.5V
V
GS
=-4.5V
I
D
=-8A
V
GS
=-10V
0.8
0
10
20
30
40
-50 -25
0
25 50 75
100 125 150 175 200
-I
D
(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
100
55
50
45
40
35
30
25
20
15
I
D
=-12A
10
1
0.1
125°C
125°C
25°C
0.01
25°C
0.001
0.0001
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-V
SD
(Volts)
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
3
UTD Semiconductor Co.,Limited
R
UMW
AOD4189
P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
2400
2000
1600
1200
800
10
V
DS
=-20V
I
D
=-12A
C
iss
6
4
C
rss
2
C
oss
15
400
0
0
0
5
10
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
25
30
35
40
0
5
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
10000
1000
100
100
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
10
R
DS(ON)
limited
1ms
T
J(Max)
=175°C
T
C
=25°C
10ms
DC
1
10
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
-V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
c
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=2.4°C/W
P
D
0.1
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
UTD Semiconductor Co.,Limited
R
UMW
AOD4189
P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
100
60
50
40
10
30
20
10
1
0
0.01
0.1
1
10
Time in Avalache, t
A
(s)
Figure 12: Single Pulse Avalanche Capability
100
1000
0
25
50
75
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
10000
1000
100
10
50
T
J(Max)
=150°C
T
A
=25°C
40
30
20
10
0
1
0
25
50
75
CASE
(°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
1E-04 0.001
0.01
0.1
1
10
100 1000
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=50°C/W
0.1
P
D
0.01
T
on
T
Single Pulse
0.001 0.01
0.001
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
5
UTD Semiconductor Co.,Limited
R
UMW
AOD4189
P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
f
t
d(off)
t
d(on)
t
r
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
E
AR
= 1/2 LI
A
2
R
L
Vds
Id
Vds
–
BV
DSS
Vgs
Vdd
Vgs
VDC
+
Id
Rg
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
DUT
Vgs
t
rr
Vds –
L
-Isd
-I
F
Isd
Vgs
dI/dt
–
I
RM
+
Vdd
VDC
Vdd
–
-Vds
Ig
6
UTD Semiconductor Co.,Limited
R
UMW
AOD4189
P-Channel MOSFET
Package Mech
anical Data
TO-252
E
A
B2
Dimensions
C2
V 1
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.10
0
Max.
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
2.50
0.10
0.86
5.48
0.60
0.58
6.30
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
B
G
5.30REF
0.209REF
D1
E
DETAIL A
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
V1
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
V 2
H
L
V1
1.65
L2
V1
V2
E1
L2
7°
7°
DETAIL A
0°
6°
0°
6°
Marking
Ordering information
Package
TO-252
Deliverymode
reel
Baseqty
2500
Order code
Tape and
UMW AOD4189
7
UTD Semiconductor Co.,Limited
