UMW-Youtai-Semiconductor-Co—Ltd–AOD508-UMW
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R
AOD508
UMW
General Description
• Very Low RDS(on) at 10VGS
• Low Gate Charge
• High Current Capability
Application
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
•
•
100% UIS Tested
100% R
g
Tested
D
•
•
V
DS
(V) = 30V
I
D
= 70A (
V
G
S
= 10V)
R
DS(ON)
< 3m
Ω
(V
GS
= 10V)
R
DS(ON)
< 4.5m
Ω
(V
GS
= 4.5V)
•
•
G
S
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
70
V
V
GS
T
C
=25
°
C
Continuous Drain
Current
G
I
D
T
C
=100
°
C
55
A
Pulsed Drain Current
C
I
DM
159
22
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
I
DSM
A
18
Avalanche Current
C
Avalanche energy L=0.1mH
C
I
AS
37
A
mJ
V
E
AS
68
V
DS
Spike
100ns
V
SPIKE
36
T
C
=25
°
C
T
C
=100
°
C
T
A
=25
°
C
T
A
=70
°
C
50
P
D
W
Power Dissipation
B
Power Dissipation
A
25
2.5
P
DSM
W
°C
1.6
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
Typ
16
Max
Units
°
C
/W
°
C
/W
°
C
/W
t
≤
10s
20
50
3
R
θ
JA
Steady-State
Steady-State
41
R
θ
JC
2.1
UTD Semiconductor Co.,Limited
1
R
AOD508
UMW
Electrical Characteristics (T =25
°
C
u
nless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
V
DS
=30V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
= ±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
100
2.2
nA
V
V
GS(th)
V
DS
=V
GS
，
I
D
=250
µ
A
1.2
1.8
2.4
V
GS
=10V, I
D
=20A
m
Ω
3
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
3.3
105
0.7
4.5
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
G
58
A
C
iss
C
oss
C
rss
R
g
Input Capacitance
2010
898
124
1.8
36
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
0.9
2.7
49
23
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
nC
nC
nC
nC
ns
ns
ns
ns
17
V
GS
=10V, V
DS
=15V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
8
7.5
4.0
37.0
7.5
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
ns
Q
rr
nC
20.3
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25 C.
The
°
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150
°
C. The value in any given application depends
on the user’s specific board design, and the maximum temperature of 175
°
C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=175
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
UTD Semiconductor Co.,Limited
2
R
AOD508
UMW
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
50
45
40
35
30
25
20
15
10
5
V
DS
=5V
4.5V
3.5V
10V
3V
125
°
C
25
°
C
V
GS
=2.5V
4
0
0
1
2
3
4
5
6
0
1
2
3
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=20A
V
GS
=4.5V
V
GS
=4.5V
I
D
=20A
V
GS
=10V
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
I
D
(A)
20
25
30
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
8
6
4
2
0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
I
D
=20A
125
°
C
125
°
C
25
°
C
25
°
C
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
UTD Semiconductor Co.,Limited
3
R
AOD508
UMW
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
3000
2500
2000
1500
1000
500
V
DS
=15V
I
D
=20A
C
iss
6
4
C
oss
2
C
rss
0
0
0
10
20
Q
g
(nC)
30
40
50
0
5
10
V
DS
(Volts)
15
20
25
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
300
200
100
0
1000.0
100.0
10.0
1.0
R
DS(ON)
10
µ
s
100
µ
s
DC
1ms
10ms
T
J(Max)
=150
°
C
T
C
=25
°
C
T
J(Max)
=150
°
C
T
C
=25
°
C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=T /T
o
n
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
=T +P
.Z .R
J
,
P
K
C
D
M
θ
J
C
θ
JC
R
=3
°
C/W
θ
J
C
0.1
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
UTD Semiconductor Co.,Limited
4
R
AOD508
UMW
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
T
CASE
(
°
C)
Figure 13: Current De-rating (Note F)
100
125
150
175
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
10000
T
A
=25
°
C
1000
100
10
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=50
°
C/W
0.1
0.01
Si
n
g
l
e
P
u
l
s
e
0.001
0.001
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
UTD Semiconductor Co.,Limited
5
R
AOD508
UMW
TO-
252
E
A
B2
Dimensions
Inches
C2
V 1
Ref.
Millimeters
Typ.
Typ.
Min.
2.10
0
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
B
G
5.30REF
0.209REF
D1
E
DETAIL A
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
V1
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
V 2
H
L
V1
1.65
L2
V1
V2
E1
L2
7°
7°
DETAIL A
0°
6°
0°
6°
Marking
Ordering information
Package
Deliverymode
Baseqty
2500
Order code
reel
UMW A
O
D
5
08
Tape and
TO-252
UTD Semiconductor Co.,Limited
6
