UMW-Youtai-Semiconductor-Co—Ltd–AOD510-UMW
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R
AOD510
UMW
30
V
N
-Channel MOSFET
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
D
al
• Isolated DC/DC Converters in Telecom and Industri
Product Summary
G
•
•
V
DS
(V) =30V
S
I
D
=70A (
V
G
S
= 10V)
R
DS(ON)
<2.6m
Ω
(V
GS
=10V)
R
DS(ON)
<4m
Ω
(V
GS
=4.5V)
•
•
•
•
100% UIS Tested
100% Rg
Tested
Absolute Maximum Ratings
T =25
°
C
u
nless otherwise noted
A
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
30
V
G
ate-
Sour
c
e
Voltage
GS
±
20
V
T
C
=25
°
C
70
54
Continuous Drain
Current
G
I
D
T
C
=100
°
C
A
Pulsed Drain Current
C
I
DM
280
45
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain
Current
I
DSM
A
37
Avalanche Current
C
Avalanche energy L=0.1mH
C
I
AS
45
A
mJ
V
E
AS
101
36
V
DS
Spike
100ns
V
SPIKE
T
C
=25
°
C
T
C
=100
°
C
T
A
=25
°
C
T
A
=70
°
C
60
P
D
W
Power Dissipation
B
Power Dissipation
A
30
7.5
P
DSM
W
°C
5.2
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
t
≤
10s
R
θ
JA
Steady-State
Steady-State
41
50
R
θ
JC
1.9
2.5
UTD Semiconductor Co.,Limited
1
R
AOD510
UMW
30
V
N
-Channel MOSFET
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
V
DS
=30V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.2
nA
V
V
GS(th)
V
DS
=V
GS,
I
D
=250
µ
A
1.2
1.7
2.1
V
GS
=10V, I
D
=20A
m
Ω
2.6
4
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
3.2
85
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
G
70
A
C
iss
C
oss
C
rss
R
g
Input Capacitance
2719
1204
169
2
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
0.9
3
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
44
60
28
nC
nC
nC
nC
ns
ns
ns
ns
21
V
GS
=10V, V
DS
=15V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9
7
9.7
5.2
32.5
10.3
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
t
rr
I
F
=20A, dI/dt=500A/
µ
s
I
F
=20A, dI/dt=500A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19.6
42.7
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150
°
C. The value in any given application depends
on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single
pulse width limited by junction temperature T
J(MAX)
=175
°
C.
D. The R
θ
JA
is the sum of the thermal impedance from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
UTD Semiconductor Co.,Limited
2
R
AOD510
UMW
30
V
N
-Channel MOSFET
TYPICAL ELECTRICAL A
ND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
4V
V
DS
=5V
3.5V
4.5V
V
GS
=3V
125
°
C
25
°
C
0
1
2
3
4
5
0
1
2
3
4
5
V
GS
(Volts)
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
6
5
4
3
2
1
0
1.6
1.4
1.2
1
V
GS
=10V
I
D
=20A
V
GS
=4.5V
V
GS
=4.5V
I
D
=20A
V
GS
=10V
0.8
0
5
10
15
I
D
(A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Juncti
o
n
Temperature
6
1.0E+02
I
D
=20A
5
4
3
2
1
0
1.0E+01
1.0E+00
125
°
C
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
UTD Semiconductor Co.,Limited
3
R
AOD510
UMW
30
V
N
-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
3500
3000
2500
2000
1500
1000
500
V
DS
=15V
I
D
=20A
8
C
iss
6
4
C
oss
2
C
rss
0
0
0
10
20
Q
g
(nC)
30
40
50
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
T
J(Max)
=175
°
C
T
C
=25
°
C
R
DS(ON)
limited
10
µ
s
100
µ
s
1ms
10ms
T
J(Max)
=175
°
C
T
C
=25
°
C
DC
10
0.1
40
0.0
0
0.01
0.1
1
100
0.0001
0.001
0.01
0.1
1
10
V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JC
=2.5
°
C/W
P
D
Single Pulse
0.1
0.01
T
on
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
UTD Semiconductor Co.,Limited
4
R
AOD510
UMW
30
V
N
-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
100
80
60
60
40
40
20
20
0
0
0
25
50
75
T
CASE
(
°
C)
Figure 12: Power De-rating (Note F)
100
125
150
175
0
25
50
75
100
125
150
175
T
CASE
(
°
C)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
T
A
=25
°
C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=50
°
C/W
0.1
P
D
Single Pulse
0.01
0.001
T
on
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
UTD Semiconductor Co.,Limited
5
R
AOD510
UMW
30
V
N
-Channel MOSFET
TO-252
E
A
B2
Dimensions
Inches
C2
V 1
Ref.
Millimeters
Typ.
Typ.
Min.
2.10
0
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
B
G
5.30REF
0.209REF
D1
E
DETAIL A
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
V1
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
V 2
H
L
V1
1.65
L2
V1
V2
E1
L2
7°
7°
DETAIL A
0°
6°
0°
6°
Marking
Ordering information
Package
Deliverymode
Baseqty
Order code
reel
Tape and
TO-252
2500
UMW AOD510
UTD Semiconductor Co.,Limited
6
