UMW-Youtai-Semiconductor-Co—Ltd–FDD8896
| Part # | UMW-Youtai-Semiconductor-Co—Ltd–FDD8896 |
Download  | UMW-Youtai-Semiconductor-Co—Ltd–FDD8896 |
R
UMW
F
DD
8896
3
0V N-Channel
MOSFET
Description
D
This N-Channel MOSFET has been designed
specifically to impro
ve the overall efficiency of DC/
conventional switching PWM
controllers. It
has
been optimized for low gate charge, low r
DS(ON)
and
G
fast switching speed.
S
Features
V
DS
(V) = 30V
I
D
= 35A (V
GS
= 10V)
R
DS(ON)
=5.7m
Ω
(V
GS
= 10V)
R
DS(ON)
=6.8m
Ω
(V
GS
= 4.5V)
MOSFET Maximum Ratings
T =
25°C unless otherwise noted
C
Symbol
Parameter
Ratings
30
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GS
±
20
Drain Current
o
94
85
A
A
Continuous (T
= 25 C, V
= 10V) (Note 1)
C
GS
o
I
Continuous (T
= 25 C, V
= 4.5V) (Note 1)
C GS
D
o
o
Continuous (T
= 25 C, V
= 10V, with R
= 52 C/W)
θ
JA
17
A
amb
GS
Pulsed
Figure 4
168
A
E
P
Single Pulse Avalanche Energy (Note 2)
Power dissipation
mJ
W
AS
80
D
o
o
Derate above 25 C
0.53
W/ C
o
T , T
Operating and Storage
T
e
mperature
-55 to 175
C
J
STG
Thermal Characteristics
o
R
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
1.88
100
52
C/W
θ
JC
o
R
C/W
θ
JA
2
o
R
Thermal Resistance Junction to Ambient TO-252, 1in
copper pad area
C/W
θ
JA
1
UTD Semiconductor Co.,Limited
R
UMW
F
DD
8896
3
0V N-Channel
MOSFET
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
= 250
µ
A, V
= 0V
30
–
–
–
–
–
–
V
VDSS
D
GS
V
V
V
= 24V
= 0V
1
DS
GS
GS
I
I
µ
A
nA
DSS
o
T
= 150 C
–
250
±
100
C
=
±
20V
–
GSS
On Characteristics
V
Gate to Source Threshold Voltage
V
= V
, I
= 250
µ
A
1.2
–
2.5
57
68
V
GS(TH)
GS
DS
D
I
I
I
= 35A, V
= 10V
–
–
47
57
D
D
D
GS
= 35A, V
= 4.5V
GS
Ω
m
r
Drain to Source On Resistance
DS(ON)
= 35A, V
= 10
V
,
GS
–
75
92
o
T =
175 C
J
Dynamic Characteristics
C
C
C
R
Input Capacitance
–
–
–
–
–
–
–
–
–
–
2525
490
300
2.1
46
–
–
pF
pF
pF
Ω
ISS
OSS
RSS
G
V
= 15V, V
= 0V,
GS
DS
Output Capacitance
f = 1MHz
Reverse
T
r
ansfer Capacitance
Gate Resistance
–
V
V
V
V
= 0.5
V
, f =
1
MHz
= 0V to 10V
–
GS
GS
GS
GS
Q
Q
Q
Q
Q
Q
T
o
tal Gate Charge at 10V
T
o
tal Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
60
32
3.0
–
nC
nC
nC
nC
nC
nC
g(TOT)
g(5)
g(TH)
gs
= 0V to 5V
24
V
= 15V
DD
= 35A
= 0V to 1V
2.3
6.9
4.6
9.8
I
D
I =
1.0mA
g
–
gs2
–
gd
Switching Characteristics
(V =
10V)
GS
t
t
t
t
t
t
T
u
rn-On Time
T
u
rn-On Delay Time
Rise Time
–
–
–
–
–
–
–
9
171
ns
ns
ns
ns
ns
ns
ON
–
d(ON)
106
53
41
–
–
V
V
= 15
V
, I
=
3
5A
r
DD
GS
D
= 10V, R
= 6.2
Ω
T
u
rn-Off Delay Time
Fall Time
–
–
GS
d(OFF)
f
T
u
rn-Off Time
143
OFF
Drain-Source Diode Characteristics
I
I
I
I
= 35A
= 15A
–
–
–
–
–
–
–
–
1.25
1.0
27
V
V
SD
SD
SD
SD
V
Source to Drain Diode Voltage
SD
t
Reverse Recovery Time
= 35A, dI
/dt = 100A/
µ
s
ns
nC
rr
SD
Q
Reverse Recovered Charge
= 35A, dI
/dt = 100A/
µ
s
12
RR
SD
Notes:
1:
Package current limitation is 35A.
2:
Starting T
= 25°C, L = 0.43mH, I
= 28A, V
= 27V, V
= 10V.
J
AS
DD
GS
2
UTD Semiconductor Co.,Limited
R
UMW
F
DD
8896
3
0V N-Channel
MOSFET
Typical Characteristics
T =
25°C unless otherwise noted
C
1.2
100
CURRENT LIMITED
BY PACKAGE
1.0
75
0.8
0.6
50
0.4
25
0.2
0
0
0
25
50
75
100
150
175
125
o
25
50
75
100
125
150
175
T
, CASE TEMPERATURE (
C)
o
C
T ,
CASE TEMPER
A
T
URE (
C)
C
Figure 1.
Normalized Power Dissipation vs Case
Temperature
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE – DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY
F
ACTOR: D = t
/t
1
2
SINGLE PULSE
0.01
PEAK T
= P
x Z
x R
+ T
θ
JC C
J
DM
θ
JC
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, REC
T
ANGULAR PULSE DURATION (s)
10
10
10
Figure 3.
Normalized Maximum Transient Thermal Impedance
1000
o
T
= 25
C
C
FOR TEMPER
A
T
URES
TRANSCONDUC
T
ANCE
M
A
Y
L
IMIT CURRENT
IN THIS REGION
o
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
V
= 4.5V
GS
175 – T
150
C
I = I
25
100
30
-5
-4
-3
-2
-1
0
1
10
10
10
10
t,
P
ULSE WIDTH (s)
10
10
10
Figure 4.
Peak Current Capability
3
UTD Semiconductor Co.,Limited
R
UMW
F
DD
8896
3
0V N-Channel
MOSFET
Typical Characteristics
T =
25°C unless otherwise noted
C
1000
100
10
500
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
DD
)
AS
DSS
10
µ
s
If R
≠
0
= (L/R)ln[(I
*R)/(1.3*R
A
T
ED BV
t
– V
) +1]
DD
AV
AS
DSS
100
100
µ
s
o
STARTING T
= 25
C
J
OPERATION IN THIS
AREA M
A
Y
B
E
10
LIMITED BY r
DS(ON)
1ms
1
10ms
DC
SINGLE PULSE
T
= MAX RATED
o
J
STARTING T
= 150
C
J
o
T
= 25
C
C
1
0.01
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
60
0.1
1
10
t ,
TIME IN AVALANCHE (ms)
AV
100
V
DS
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
100
100
PULSE DURATION = 80
µ
s
PULSE DURATION = 80
µ
s
V
= 4V
GS
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
o
V
= 15V
DD
80
60
40
20
0
T =
25 C
C
80
60
40
20
0
V
= 5V
GS
V
= 3V
GS
o
V
= 10V
GS
T
= 25
C
J
V
= 2.5V
o
GS
o
T
= 175
C
J
T
= -55
C
J
0
0.2
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
0.4
0.6
0.8
1.5
2.0
2.5
3.0
3.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
14
1.6
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
PULSE DUR
A
T
ION = 80
µ
s
DUTY CYCLE = 0.5% MAX
I
= 35A
D
12
10
8
1.4
1.2
1.0
0.8
0.6
6
I
= 1A
D
V
= 10
V
, I
=
3
5A
D
GS
4
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
V
, G
A
T
E TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (
C)
GS
J
Figure 9.
Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
4
UTD Semiconductor Co.,Limited
R
UMW
F
DD
8896
3
0V N-Channel
MOSFET
Typical Characteristics
T =
25°C unless otherwise noted
C
1.2
1.0
0.8
0.6
0.4
1.2
1.1
1.0
0.9
I
= 250
µ
A
V
= V
, I
= 250
µ
A
DS D
D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPER
A
T
URE ( C)
T ,
JUNCTION TEMPERATURE (
C)
J
J
Figure 11.
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
10
C
=
C +
C
GS GD
V
= 15V
ISS
DD
8
6
4
2
0
C
C
+ C
OSS
DS GD
1000
C
=
C
GD
RSS
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 35A
= 5A
D
D
V
= 0V, f = 1MHz
GS
100
0.1
0
10
20
30
40
50
1
10
30
V
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
G
A
T
E CHARGE (nC)
DS
g
Figure 13.
Capacitance vs Drain to Source
Voltage
Figure 14.
Gate Charge Waveforms for Constant
Gate Current
5
UTD Semiconductor Co.,Limited
R
UMW
F
DD
8896
3
0V N-Channel
MOSFET
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
VARY t
TO OBTAIN
P
AS
+
–
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01
Ω
t
AV
Figure 15.
Unclamped Energy Test Circuit
Figure 16.
Unclamped Energy Waveforms
V
DS
V
Q
DD
g(TOT)
V
GS
V
L
DS
V
= 10V
GS
Q
V
g(5)
GS
+
–
Q
gs2
V
V
= 5V
DD
GS
DUT
V
= 1V
GS
I
g(REF)
0
Q
g(TH)
Q
Q
gs
gd
I
g(REF)
0
Figure 17.
Gate Charge Test Circuit
Figure 18.
Gate Charge Waveforms
V
DS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
R
L
t
t
f
r
V
DS
90%
90%
+
–
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
V
10%
GS
0
Figure 19.
Switching Time Test Circuit
Figure 20.
Switching Time Waveforms
6
UTD Semiconductor Co.,Limited
R
UMW
F
DD
8896
3
0V N-Channel
MOSFET
Package Mechanical Data
TO-252
E
A
B2
Dimensions
Inches
C2
V 1
Ref.
Millimeters
Typ.
Typ.
Min.
2.10
0
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
B
G
5.30REF
0.209REF
D1
E
DETAIL A
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
V1
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
V 2
H
L
V1
1.65
L2
V1
V2
E1
L2
7°
7°
DETAIL A
0°
6°
0°
6°
Ordering information
Order code
Package
Baseqty
2500
Delivery mode
Tape and reel
UMW FDD8896
TO-252
7
UTD Semiconductor Co.,Limited
