UMW-Youtai-Semiconductor-Co—Ltd–FDN336P-UMW
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R
FDN336
P-Channel 2.5 V (D-S) MOSFET
UMW
General Description
SOT
–
23
This P-Channel 2.5V specified
MOSFET has been
and yet maintain
low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
1. GATE
2. SOURCE
3. DRAIN
Features
V
DS (V)
= -20V
R
DS(ON)
R
DS(ON)
91m
(V
GS
= -4.5V)
(V
GS
= -2.5V)
108m
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–20
V
GSS
I
D
Gate-Source Voltage
V
A
±
8
Drain Current
– Continuous
– Pulsed
(Note 1a)
–
1.3
–10
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
250
75
R
θ
JA
°
C/W
°
C/W
Thermal Resistance, Junction-to-Case
R
θ
JC
1
UTD Semiconductor Co.,Limited
R
FDN336
P-Channel 2.5 V (D-S) MOSFET
UMW
O
Electrical Characteristic
s
(T
A
= 25 C
un
l
e
ss otherw
i
s
e noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V,
I
D
= -250 µA
-20
V
I
D
= -250 µA, Referenced to
25
o
C
mV /
o
C
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage
Drain Current
-16
D
BV
DSS
/
D
T
J
-1
µA
µA
nA
nA
I
DSS
V
DS
= -16 V,
V
GS
= 0 V
-10
T
J
= 55°C
I
GSSF
I
GSSR
Gate – Body Leakage, Forward
Gate – Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0
V
V
GS
= -8
V, V
DS
= 0
V
100
-100
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
I
D
= -250 µA, Referenced to
25
o
C
-0.4
-0.9
3
-1.5
V
mV /
o
C
Gate Threshold Voltage Temp. Coefficient
D
V
GS(th)
/
D
T
J
R
DS(ON)
Static Drain-Source On-Resistance
88
91
V
GS
= -4.5 V,
I
D
= -1.3 A
m
W
103
108
V
GS
= -2.5 V,
I
D
= -1.1 A
V
GS
= -4.5 V,
V
DS
= -5 V
V
DS
= -4.5 V,
I
D
= -2 A
I
D(ON)
g
FS
On-State Drain Current
-5
A
Forward Transconductance
4
S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= -10 V,
V
GS
= 0 V,
f =
1.0 MHz
330
80
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
35
SWITCHING CHARACTERISTICS
(Note 2)
Turn – On Delay Time
Turn – On Rise Time
Turn – Off Delay Time
Turn – Off Fall Time
Total Gate Charge
7
15
22
26
12
5
ns
ns
t
D(on)
t
r
t
D(off)
t
f
V
DD
= -5 V,
I
D
= -0.5 A,
V
GS
= -4.5 V,
R
GEN
= 6
W
12
16
5
ns
ns
3.6
0.8
0.7
nC
nC
nC
Q
g
Q
gs
Q
gd
V
DS
= -10 V,
I
D
= – 2 A,
V
GS
= -4.5 V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V,
I
S
= -0.42 A
(Note)
-0.42
-1.2
A
V
I
S
V
SD
Note:
-0.7
1. R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of
the drain
pins. R
q
JC
is guaranteed by
design while R
q
CA
is determined by the user’s board design.
a. 250
o
C/W when mounted on
a 0.02 in
2
pad of 2oz Cu.
b. 270
o
C/W when mounted on
a 0.001 in
2
pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2
UTD Semiconductor Co.,Limited
R
FDN336
P-Channel 2.5 V (D-S) MOSFET
UMW
Typical Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
V
= -4.5V
GS
8
6
4
2
0
-3.5V
-3.0V
V
= -2.5 V
GS
-2.5V
-3.0V
-3.5V
-4.0V
-4.5V
-2.0V
0.8
0
1
2
3
4
5
0
2
4
6
8
10
-V ,
DRAIN-SOURCE VOLTAGE (V)
DS
– I
, DRAIN CURRENT (A)
D
Fi
g
ure 2. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n w
i
t
h
Drain Current and Gate
Figure 1. On-Region Characteristics
.
0.5
1.6
1.4
1.2
1
I
D
= -0.6A
I
= -1.3A
= -4.5V
D
V
0.4
0.3
0.2
0.1
0
GS
T
= 125°C
A
0.8
25°C
8
0
2
4
6
10
0.6
-50
-25
0
T
25
50
75
100
125
150
– V
, GATE TO SOURCE VOLTAGE (V)
GS
, JUNCTION TEMPERATURE (°C)
J
Fi
g
ure 4. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n w
i
t
h
Gate-to-Source Vo
l
t
age.
Fi
g
ure 3. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n
w
i
t
h Temperature
.
10
4
3
2
1
0
V
G
S
= 0V
V
DS
= -5V
T =
-55°C
J
25°C
T =
125°C
J
1
125°C
25°C
-55°C
0.1
0.01
0.001
0.5
1
1.5
2
2.5
0.2
0.4
0.6
0.8
1
1.2
1.4
-V ,
GATE TO SOURCE VOLTAGE (V)
GS
-V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
Fi
g
ure 5
. Transfer Character
i
s
t
i
c
s.
Fi
g
ure 6.
B
o
dy Diode For
w
a
r
d Voltage
V
a
r
i
a
t
i
o
n w
i
t
h Source
Current
and Temperature.
3
UTD Semiconductor Co.,Limited
R
FDN336
P-Channel 2.5 V (D-S) MOSFET
UMW
Typical Electrical Characteristics
(
c
ont
i
n
ued)
700
400
V
DS
= -5V
-10V
-15V
4
3
2
1
0
C
iss
200
100
C
oss
40
f = 1 MHz
V
GS
= 0 V
C
rss
0
1
2
3
4
0.1
0.2
0.5
1
2
5
10
20
Q
, GATE CHARGE (nC)
g
-V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
Fi
g
ure 7. Gate Charge Character
i
s
t
i
c
s.
Fi
g
ure 8. Capac
i
t
ance Character
i
s
t
i
c
s
.
30
10
50
SINGLE PULSE
40
30
20
10
JA
R
q
=270°C/W
3
T
A
= 25°C
1
100ms
0.3
V
GS
= -4.5V
0.1
SINGLE PULSE
R
q
= 270°C/W
JA
0.03
0.01
T
A
= 25°C
0
0.0001
0.001
0.01
0.1
1
10
100 300
0.2
0.5
1
3
5
10
30
SINGLE PULSE TIME (SEC)
-V ,
DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
ure 9. Max
i
m
um Safe Operat
i
n
g Area.
Fi
g
ure 10. S
i
n
g
l
e Pul
s
e
M
aximum Po
w
er
Di
s
s
i
p
at
i
o
n.
1
D = 0.5
0.5
0.2
0.2
R
(t) = r(t)
* R
JA JA
q
q
R
= 270 °C/W
JA
q
0.1
0.1
0.05
0.05
P(pk)
0.02
0.02
0.01
0.01
t
1
t
2
Single Pulse
T
– T
= P
* R
(t)
JA
0.005
J
A
q
Duty Cycle, D = t
/t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Fi
g
ure 11. Trans
i
e
nt Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
4
UTD Semiconductor Co.,Limited
R
FDN336
P-Channel 2.5 V (D-S) MOSFET
UMW
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
UMW FDN336P
Tape and
reel
SOT-23
3000
5
UTD Semiconductor Co.,Limited
