UMW-Youtai-Semiconductor-Co—Ltd–FDN360P-UMW
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R
UMW
FDN360
Single P-Channel
MOSFET
General Description
loss and fast switching are required.
SOT
–
23
Features
–
V
DS (V)
= 30V
l
I
D
= -2A
(V
GS
=10V)
l
l
l
80m
(V
GS
= -10V)
(V
GS
= -4.5V)
R
DS(ON)
1. GATE
125m
R
DS(ON)
2. SOURCE
3. DRAIN
Low gate charge (6.2 nC typical)
l
l
l
High performance trench technology for extremely
low R
DS(ON)
High power version of industry Standard SOT-23 package.
higher power handling capability.
.
l
D
G
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
–30
V
V
A
V
GSS
Gate-Source Voltage
±
20
–2
I
D
Drain Current
– Continuous
– Pulsed
(Note 1a)
–10
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.5
P
D
W
0.46
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
R
q
JA
R
q
JC
1
UTD Semiconductor Co.,Limited
R
UMW
FDN360
Single P-Channel
MOSFET
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
–30
V
V
GS
= 0 V, I
D
= –250
m
A
D
BV
DSS
D
T
J
Breakdown Voltage Temperature
Coefficient
–22
I
D
= –250
m
A, Referenced to 25
°
C
mV/
°
C
m
A
V
DS
= –24V,
V
DS
= –24V, V
GS
= 0 V, T
J
=55
°
C
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= 0 V
–1
–10
100
–100
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
I
GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
nA
nA
V
GS
= –20 V,
V
DS
= 0 V
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
–1
–1.9
4
–3
V
V
DS
= V
GS
, I
D
= –250
m
A
D
V
GS(th)
D
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250
m
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –10 V,
V
GS
= –4.5 V,
I
D
= –2 A
63
80
m
W
I
D
= –1.5A
100
5
125
I
D(on)
g
FS
On–State Drain Current
V
GS
= –10 V,
V
DS
= –5 V,
V
DS
= –5 V
I
D
= –2 A
–10
A
S
Forward Transconductance
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
298
83
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
39
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
13
11
6
12
23
20
12
9
ns
ns
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
W
ns
ns
Q
g
Q
gs
Q
gd
6.2
1
nC
nC
nC
V
DS
= –15V,
V
GS
= –10 V
I
D
= –3.6 A,
1.2
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
–0.42
–1.2
A
V
Drain–Source Diode Forward
V
SD
V
GS
= 0 V,
I
S
= –0.42 A
(Note 2)
–0.8
Voltage
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
CA
is determined by the user’s board design.
b) 270°C/W
when mounted on a
minimum pad.
a) 250
°
C/W when mounted on a
0.02 in
pad of 2 oz. copper.
2
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
£
300
m
s, Duty Cycle
£
2.0%
2
UTD Semiconductor Co.,Limited
R
UMW
FDN360
Single P-Channel
MOSFET
15
2
1.8
1.6
1.4
1.2
1
V
GS
= -10V
-6.0V
-5.0V
12
9
-4.5V
V
GS
= -3.5V
-4.0V
-4.0V
-4.5V
6
-3.5V
-5.0V
-6.0V
3
0.8
0.6
0.4
-7.0V
-10V
-3.0V
0
0
1
2
3
4
5
0
3
6
9
12
15
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.3
I
D
= -2A
V
GS
= -10V
1.4
I
D
= -1A
0.25
0.2
1.2
1
T
A
= 125
o
C
0.15
0.1
0.8
0.6
T
A
= 25
o
C
0.05
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
10
V
GS
= 0V
T
A
= -55
o
C
V
DS
= -5.0V
25
o
C
125
o
C
1
T
A
= 125
o
C
6
0.1
25
o
C
4
0.01
0.001
-55
o
C
2
0
0.0001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
UTD Semiconductor Co.,Limited
R
UMW
FDN360
Single P-Channel
MOSFET
10
400
300
200
100
0
f = 1 MHz
V
GS
= 0 V
V
DS
= -5V
I
D
= -3.6A
-10V
C
ISS
8
6
4
2
0
-15V
C
OSS
C
RSS
0
1
2
3
4
5
6
7
0
6
12
18
24
30
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
20
15
10
5
SINGLE PULSE
R
q
JA
= 270°C/W
T
A
= 25°C
R
DS(ON)
LIMIT
10
m
s
100
m
s
1ms
10ms
100ms
1s
1
V
GS
= -10V
SINGLE PULSE
R
q
JA
=270
o
C/W
T
A
= 25
o
C
DC
0.1
0.01
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
q
JA
(t) = r(t) + R
q
JA
0.2
R
q
JA
= 270 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
0.01
t
2
0.01
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
4
UTD Semiconductor Co.,Limited
R
UMW
FDN360
Single P-Channel
MOSFET
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
3000
Tape and
reel
SOT-23
UMW FDN360P
5
UTD Semiconductor Co.,Limited
