UMW-Youtai-Semiconductor-Co—Ltd–IRF7104TR-UMW
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R
IRF7104TR
-30V Dual P-Channel MOSFET
UMW
Benefits
1
2
3
4
8
7
S1
D
1
•
V
DS (V)
= -30V
G
1
D
1
•
•
I
D
=
-2.3
A
6
5
S
2
D
2
2
250
m
R
DS(ON)
＜
Ω
(V
GS
=-10V)
D
G
2
400m
Ω
(V
R
DS(ON)
＜
•
•
GS
=-4.5V)
Top View
Ultra Low On-resistance
•
•
Fast Switching
Lead-free
Absolute Maximum Ratings
Parameter
Max.
-2.3
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
-1.8
-10
P
D
@T
C
= 25°C
Power Dissipation
2.0
W
W/°C
V
Linear Derating Factor
0.016
± 12
V
GS
Gate-to-Source Voltage
dv/dt
T
J
,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-3.0
V/nS
-55 to
+ 150
°C
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max.
Units
R
θ
JA
Maximum Junction-to-Ambient
62.5
°C/W
UTD Semiconductor Co.,Limited
1
R
IRF7104TR
-30V Dual P-Channel MOSFET
UMW
Parameter
Min. Typ. Max. Units
–
3
0 V
GS
= 0V, I
D
= -250µA
Conditions
Drain-to-Source Breakdown Voltage
V
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
-0.015
V/°C
Reference to 25°C, I
D
= -1mA
= -10V, I
D
= -1.0A
= -4.5V, I
D
= -0.50A
190 250
300 400
V
GS
V
GS
R
DS(ON)
Static Drain-to-Source On-Resistance
m
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
-1.0 -3.0
2.5
-2.0
-25
-100
100
V
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -15V, I
D
= -2.3A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 55 °C
V
GS
= -12V
Forward Transconductance
S
µA
I
D
SS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
V
GS
= 12V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
9.3
25
I
D
= -2.3A
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
1.6
3.0
nC V
DS
= -10V
V
GS
= -10V
V
DD
= -10V
12
16
42
30
40
40
90
50
Ris
e
T
ime
I
D
= -1.0A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fal
l
T
ime
R
G
= 6.0
Ω
R
D
= 10
Ω
D
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
4.0
6.0
Between lead,6mm(0.25in.)
nH
pF
A
G
from package and center
of die contact
V
GS
= 0V
S
C
iss
C
oss
C
rss
I
S
Input Capacitance
290
210
67
Output Capacitance
V
DS
= -15V
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
= 1.0MHz
D
MOSFE
T
s
ymbol
showing the
-2.0
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
-9.2
p-n junction diode.
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
-1.2
69 100
90 140
V
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= -1.25A
Q
rr
t
on
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature.
I
SD
≤
-2.3A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Surface mounted on FR-4 board,
t
≤
10sec.
UTD Semiconductor Co.,Limited
2
R
IRF7104TR
-30V Dual P-Channel MOSFET
UMW
-V
DS
, Drain-to-Source Voltage ( V )
-V
DS
, Drain-to-Source Voltage ( V )
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
-V
GS
, Gate-to-Source Voltage ( V )
T
J
, Junction Temperature ( °C )
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs
.
T
emperature
UTD Semiconductor Co.,Limited
3
R
IRF7104TR
-30V Dual P-Channel MOSFET
UMW
SEE FIGUR
E
1
2
-V
DS
, Drain-to-Source Voltage ( V )
Q
G
, Total Gate Charge ( nC )
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Sourc
e
V
oltage
Gate-to-Sourc
e
V
oltage
-V
DS
, Drain-to-Source Voltage ( V )
-V
SD
, Source-to-Drain Voltage ( V )
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forwar
d
V
oltage
UTD Semiconductor Co.,Limited
4
R
IRF7104TR
-30V Dual P-Channel MOSFET
UMW
R
D
V
DS
V
GS
D.U.T.
R
G
–
+
V
DD
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
T
A
, Ambient Temperature ( °C )
90%
V
DS
Fig 9.
Maximum Drain Current Vs.
Ambien
t
T
emperature
Fig 10b.
Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
DM
0.01
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
/ t
1
2
2. Peak T
=
P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fi
g
1
1.
Maximu
m
E
ffectiv
e
T
ransien
t
T
herma
l
I
mpedance
,
J
unction-to-Ambient
UTD Semiconductor Co.,Limited
5
R
IRF7104TR
-30V Dual P-Channel MOSFET
UMW
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
UTD Semiconductor Co.,Limited
6
R
IRF7104TR
-30V Dual P-Channel MOSFET
UMW
Marking
Ordering information
Package
Deliverymode
Baseqty
Order code
Tape and
reel
UMW IRF7104TR
SOP-8
3000
UTD Semiconductor Co.,Limited
7
