UMW-Youtai-Semiconductor-Co—Ltd–IRF7205TR-UMW

R

IRF7205  

-30V P-Channel

 

MOSFET  

UMW  

A

1

2

3

4

8

7

The SOP-8 package is designed forvapor phase , infra red , or  

wave soldering techniquesPower dissipation of greater than 0 .  

8W is possible ina typical PCB mount application  

D

S

S

D

6

5

S

G

D

D

Features  

•

V

DS (V)

 

= -30V  

(

V

GS

=

–

10V)  

•

•

I

D

=

-4.6

A  

R

DS(ON)

＜

 

R

DS(ON)

＜  

7

0

m  

Ω

(V  

GS  

=-10V)  

130m  

Ω

(V  

•

•

GS  

=-4.5V)  

Adavanced Process Technology  

Ultra Low On-resistance  

Surface Mount  

Fast Switching  

Lead-free  

•

•

•

•

Absolute Maximum Ratings  

Parameter  

Maxꢀ  

Units  

I

D

@ T

A

= 25°C  

I

D

@ T

A

= 70°C  

I

DM  

Continuous Drain Current, V

GS

@ 10V  

-4&6  

A

Continuous Drain Current, V

GS

@ 10V  

Pulsed Drain Current

  

-3&7  

-15  

P

D

@T

C

= 25°C  

Power Dissipation  

2&5  

W

W/°C  

V

Linear Derating Factor  

0&020  

± 20  

V

GS  

Gate-to-Source Voltage  

dv/dt  

T

J

,

T

STG  

Peak Diode Recovery dv/dt

‚  

Junction and Storage Temperature Range  

-3&0  

V/nS  

-55 to

 

+ 150  

°C  

Thermal Resistance Ratings  

Parameter  

Minꢀ  

Typꢀ  

Maxꢀ  

Units  

R

θ

JA  

Maximum Junction-to-Ambient

„

 

50  

°C/W  

UTD Semiconductor Co.,Limited  

1

R

IRF7205  

-30V P-Channel

 

MOSFET  

UMW  

T

A

= 25°C unless otherwise noted  

Parameter  

Minꢀ Typꢀ Maxꢀ Units  

Conditions  

V

(BR)DSS  

Drain-to-Source Breakdown Voltage  

-30 ––– –––

 

V

GS

= 0V, I

D

= -250µA  

V

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Temp& Coefficient

 

––– -0&024

 

––– V/°C

 

Reference to 25°C, I

D

= -1mA  

70  

130  

= -10V, I

D

= -4&6A

ƒ  

V

GS  

R

DS(ON)  

Static Drain-to-Source On-Resistance  

Ω

m

V

GS

= -4&5V, I

D

= -2&0A

ƒ  

V

DS

= V

GS

, I

D

= -250µA  

V

DS

= -15V, I

D

= -4&6A

ƒ  

V

DS

= -24V, V

GS

= 0V  

V

DS

= -15V, V

GS

= 0V, T

J

= 70 °C  

V

GS

= -20V  

V

GS(th)  

g

fs  

Gate Threshold Voltage  

-1&0 ––– -3&0  

––– 6&6 –––  

––– ––– -1&0  

––– ––– -5&0  

––– –––

 

-100  

––– ––– 100  

V

Forward Transconductance  

S

µA  

I

D

SS  

I

GSS  

Drain-to-Source Leakage Current  

Gate-to-Source Forward Leakage  

Gate-to-Source Reverse Leakage  

Total Gate Charge  

nA  

V

GS

= 20V  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

––– 27  

40  

I

D

= -4&6A  

Gate-to-Source Charge  

Gate-to-Drain (“Miller”) Charge  

Turn-On Delay Time  

––– 5&2 –––  

––– 7&5 –––  

nC V

DS

= -15V  

V

GS

= -10V

ƒ  

V

DD

= -15V  

––– 14  

––– 21  

30  

60  

Ris

e

T

ime  

I

D

= -1&0A  

ns  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fal

l

T

ime  

––– 97 150  

––– 71 100  

R

G

= 6&0

Ω  

R

D

= 10

Ω

ƒ  

D

S

L

D  

Internal Drain Inductance  

2&5  

Between lead,6mm(0&25in&)  

nH  

G

from package and center  

of die contact  

L

S  

Internal Source Inductance  

Input Capacitance  

––– 4&0  

C

iss  

––– 870  

V

GS

= 0V  

C

oss  

C

rss  

I

S  

Output Capacitance  

––– 720  

pF  

A

V

DS

= -10V  

Reverse Transfer Capacitance  

Continuous Source Current  

(Body Diode)  

––– 220 –––  

ƒ = 1&0MHz  

D

MOSFE

T

s

ymbol  

showing the  

integral reverse  

p-n junction diode&  

––– ––– -2&5  

G

I

SM  

Pulsed Source Current  

(Body Diode)

  

––– ––– -15  

S

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

––– ––– -1&2  

––– 70 100  

––– 100 180  

V

T

J

= 25°C, I

S

= -1&25A, V

GS

= 0V

ƒ  

T

J

= 25°C, I

F

= -4&6A  

ns  

nC  

Q

rr  

t

on  

Reverse RecoveryCharge  

Forward Turn-On Time  

di/dt = 100A/µs

ƒ  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)  

Notes:  



Repetitive rating;

 

pulse width limited by

 

max& junction temperature&  

‚

I

SD

≤

-4&6A, di/dt

≤

90A/µs, V

DD

≤

V

(BR)DSS

T

J

≤

150°C  

,

ƒ

Pulse width

≤

300µs; duty cycle

≤

2%&  

„

Surface mounted on FR-4 board,

 

t

≤

10sec&  

UTD Semiconductor Co.,Limited  

2

R

IRF7205  

-30V P-Channel

 

MOSFET  

UMW  

UTD Semiconductor Co.,Limited  

3

R

IRF7205  

-30V P-Channel

 

MOSFET  

UMW  

12  

UTD Semiconductor Co.,Limited  

4

R

IRF7205  

-30V P-Channel

 

MOSFET  

UMW  

R

D  

V

DS  

V

GS  

D&U&T&  

R

G  

–

+

V

DD  

-10V  

Pulse Width

≤ 1

µs  

Duty Factor

≤ 0.1 %  

Fig 10aꢀ

 

Switching Time Test Circuit  

t

t

r

t

t

f

d(on)  

d(off)  

V

GS  

10%  

90%  

V

DS  

Fig 10bꢀ

 

Switching Time Waveforms  

100  

10  

1

D = 0.50  

0.20  

0.10  

0.05  

P

2

DM  

0.02  

0.01  

t

1

t

2

SINGLE PULSE  

(THERMAL RESPONSE)  

Notes:  

1. Duty factor D =  

t /

 

t  

1

2. Peak T

 

= P  

J

x Z  

+ T  

A

DM  

thJA  

0.1  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

t ,

 

Rectangular Pulse Duration (sec)  

1

Fi

g

1

1ꢀ

Maximu

m

E

ffectiv

e

T

ransien

t

T

herma

l

I

mpedance

,

J

unction-to-Ambient  

UTD Semiconductor Co.,Limited  

5

R

IRF7205  

-30V P-Channel

 

MOSFET  

UMW  

P

A

C

D

IMEN

S

I

O

N

S  

SO

P-8  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

Min  

Max  

A

A1  

A2  

b

c

D

E

E1  

e

L

1.350  

0.100  

1.350  

0.330  

0.170  

4.700  

3.800  

5.800  

1.750  

0.250  

1.550  

0.510  

0.250  

5.100  

4.000  

6.200  

0.053  

0.004  

0.053  

0.013  

0.006  

0.185  

0.150  

0.228  

0.069  

0.010  

0.061  

0.020  

0.010  

0.200  

0.157  

0.244  

1.270(BSC)  

0.050(BSC)  

0.050  

0.400  

1.270  

0.016  

θ

0°  

8°  

0°  

8°  

UTD Semiconductor Co.,Limited  

6

R

IRF7205  

-30V P-Channel

 

MOSFET  

UMW  

Marking  

Ordering information  

Package  

Deliverymode  

Baseqty  

Order code  

Tape and

 

reel  

SOP-8  

UMW IRF7205TR  

3000  

UTD Semiconductor Co.,Limited  

7