UMW-Youtai-Semiconductor-Co—Ltd–IRF7301TR-UMW
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R
UMW
IRF7301
Description
The SOP-8 has been
modified through a customized leadframe for enhan-
ced thermal characteristic
s and multiple-die capability making it ideal in a
variety of power applications. With these improvements,multiple devices
can be used in an application with dramatically reduced board space.The
package is designed for vapor phase, infra red,or wave
1
2
8
7
S1
G1
D1
D1
soldering techniques.Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
3
4
6
5
S2
D2
D2
G2
l
Generation V Technology
l
Ultra Low On-Resistance
l
SOP-8
Dual N-Channel Mosfet
l
Surface Mount
l
Available in Tape &Reel
l
l
Dynamic dv/dt Rating
Fast Switching
Lead-Free
l
Features
V
DS (V)
= 20V
l
l
l
R
DS(ON)
R
DS(ON)
40m
50m
(V
GS
= 4.5V)
(V
GS
= 2.7V)
Absolute Maximum Ratings
Parameter
Max.
5.7
Units
A
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
10 Sec. Pulsed Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
5.2
A
A
A
4.1
21
P
D
@T
A
= 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
± 12
5.0
W/°C
V
V
GS
Gate-to-Source Voltage
dv/dt
T
J,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to
+ 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
R
θ
JA
°C/W
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7301
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
Conditions
V
GS
= 0V, I
D
= 250µA
Drai
n-to-Source Breakdown Voltage
20
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
0.044
V/°C Reference
to 25°C, I
D
= 1mA
40
50
V
GS
= 4.5
V, I
D
= 2.6A
m
Ω
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS
= 2.
7
V
,
I
D
= 2.2A
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
V
S
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 15V, I
D
= 2.6A
0.70
8.3
Forward Transconductance
Drain-to-Source Leakage Current
µA
1.0
25
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125 °C
V
GS
= 12V
Gate-to-Source Forward Leakage
100
nA
I
GSS
Gate-to-Source Reverse Leakage
Total Gate Charge
-100
20
V
GS
= – 12V
I
D
= 2.6A
Q
g
Q
gs
Q
gd
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
2.2
8.0
nC V
DS
= 16V
V
GS
= 4.5V, See Fig. 6 and 12
t
d(on)
t
r
t
d(off)
t
f
9.0
42
32
51
V
DD
= 10V
I
D
= 2.6A
ns
R
G
= 6.0
Ω
Turn-Off Delay Time
Fall Time
R
D
= 3.8
Ω,
See Fig. 10
D
L
D
Internal Drain Inductance
4.0
nH
pF
G
Between lead tip
and center of die contact
V
GS
= 0V
L
S
Internal Source Inductance
6.0
S
C
iss
C
oss
C
rss
Input Capacitance
660
280
140
Output Capacitance
V
DS
= 15V
= 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
2.5
A
G
I
S
M
Pulsed Source Current
(Body Diode)
integral reverse
21
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.0
44
33
V
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
29
22
ns
T
J
= 25°C, I
F
= 2.6A
Q
rr
t
on
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
2.6A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board,
t
≤
10sec.
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7301
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
100
10
1000
100
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
TOP
TOP
BOTTOM 1.5V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
1.5V
T
= 150°C
T
= 25°C
J
J
A
100
A
1
1
0.1
0.1
1
10
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= 4.3A
D
T =
25°C
J
T =
150°C
J
V
DS
= 15V
20µs PULSE WIDTH
5.0
A
V
= 4.5V
GS
A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80
100 120 140 160
T
, Junction Temperature (°C)
V
GS
, Gate-to-Source Voltage (V)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
R
UMW
IRF7301
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
1200
900
600
300
0
V
C
C
C
= 0V,
f = 1MHz
I
V
= 2.6A
= 16V
GS
iss
rss
oss
D
DS
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
= C
+ C
ds
gd
C
C
iss
6
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
A
1
10
100
0
5
10
15
20
25
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
T =
150°C
J
T =
25°C
J
°
10ms
T =
25 C
A
J
°
T =
150 C
Single Pulse
V
= 0V
GS
0.1
A
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7301
R
D
V
DS
V
GS
6.0
D.U.T.
R
G
+
V
DD
–
5.0
4.0
3.0
2.0
1.0
0.0
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
25
50
75
100
125
°
150
V
GS
T ,
Case Temperature
( C)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9.
Maximum Drain Current Vs.
Fig 10b.
Switching Time Waveforms
Ambient Temperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7301
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Min Max
Symbol
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7301
Ordering information
Package
SOP-8
Deliverymode
Baseqty
3000
Order code
Tape and
reel
UMW IRF7301TR
7
UTD Semiconductor Co.,Limited
