UMW-Youtai-Semiconductor-Co—Ltd–IRF7328TR-UMW
| Part # | UMW-Youtai-Semiconductor-Co—Ltd–IRF7328TR-UMW |
Download  | UMW-Youtai-Semiconductor-Co—Ltd–IRF7328TR-UMW |
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
Features
Trench Tech
nology
Ultra Low O
n-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
Lead-Free
1
2
8
7
S1
G1
D1
D1
3
4
6
5
S2
D2
D2
G2
V
DSS
-30V
R
DS(on)
max
21m
Ω
@V
GS
= -10V
32m
Ω
@V
GS
= -4.5V
I
D
-8.0A
Top View
-6.8A
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
Drain-Source Voltage
-30
-8.0
-6.4
-32
2.0
1.3
16
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
A
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
W
W
mW/°C
V
V
GS
Gate-to-Source Voltage
± 20
T
J
, T
STG
Junction and Storage Temperature Range
-55 to
+ 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
R
θ
JA
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
-30 ––– –––
V
V
GS
= 0V, I
D
= -250µA
––– -0.018 –––
V/°C Reference
to 25°C, I
D
= -1mA
––– 17
21
V
GS
= -10V, I
D
= -8.0A
V
GS
= -4.5V, I
D
= -6.8A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -10V, I
D
= -8.0A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
V
GS
= -20V
R
DS(on)
Static Drain-to-Source On-Resistance
m
Ω
26.8 32
-1.0 ––– -2.5
12 –––
–––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
Forward Transconductance
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 20V
Q
g
––– 52
78
I
D
= -8.0A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
––– 9.8 –––
––– 8.3 –––
nC
ns
pF
V
DS
= -15V
V
GS
= -10V
––– 13
––– 15
20
23
V
DD
= -15V, V
GS
= -10.0V
I
D
= -1.0A
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
––– 198 297
––– 98 147
––– 2675 –––
––– 409 –––
––– 262 –––
R
G
= 6.0
Ω
R
D
= 15
Ω
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
V
DS
= -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
–
2.0
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
-32
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.0A
––– 37
––– 36
56
54
ns
Q
rr
nC di/dt
= -100A/µs
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Pulse width
≤
400µs
;
duty cycle
≤
2%.
Surface mounted on FR-4 board,
t
≤
10sec
.
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
100
10
1
100
10
1
VGS
VGS
TOP
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
TOP
-10.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
BOTTOM -2.7V
-2.7V
-2.7V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
-8.0A
=
I
D
1.5
1.0
0.5
0.0
°
T =
150 C
J
10
°
T =
25 C
J
1
V
= -15V
DS
V
=
–
10V
20µs PULSE WIDTH
GS
0.1
2.0
3.0
4.0
5.0 6.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
-V ,
Gate-to-Source Voltage (V)
GS
T ,
Junction Temperature (
C)
J
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
4000
3000
2000
1000
0
14
12
10
8
V
= 0V,
f = 1MHz
gd ,
ds
I =
-8A
D
GS
C
= C
+ C
gs
C
SHORTED
iss
V
V
=-24V
=-15V
DS
DS
C
= C
gd
= C
+ C
ds
rss
C
oss
gd
C
iss
6
4
C
C
oss
2
rss
0
1
10
100
0
10
20
30
40
50
60
-V ,
Drain-to-Source Voltage (V)
DS
Q ,
Total Gate Charge (nC)
G
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
150 C
J
10
1
°
T =
25 C
J
100us
1ms
°
T =
25 C
J
C
°
T =
150 C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.2
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
-V ,Source-to-Drain
Voltage (V)
SD
-V ,
Drain-to-Source Voltage (V)
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
10.0
8.0
6.0
4.0
2.0
0.0
R
D
V
DS
V
GS
D.U.T.
R
G
–
+
V
DD
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperatur
e
(
C
)
T
A
90%
Fig 9.
Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b.
Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
/ t
1
2
2. Peak T
=
P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
0.100
0.075
0.050
0.025
0.000
0.060
0.050
0.040
0.030
0.020
0.010
0.000
I
= -8.0A
D
VGS = -4.5V
VGS = -10V
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0
10
20
30
40
50
60
70
-I ,
Drain Current ( A )
-V
GS,
Gate -to -Source Voltage
(V)
D
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
12V
.3
µ
F
Q
G
–
V
+
DS
10 V
D.U.
T
.
Q
Q
GD
GS
V
GS
-3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7328
Dual P-Channel 30 V (D-S) MOSFET
Marking
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW IRF7328TR
8
UTD Semiconductor Co.,Limited
