UMW-Youtai-Semiconductor-Co—Ltd–IRF7341TR-UMW

R

UMW  

IRF7341  

Description  

The SOP-8 has been modified through a customized  

enhanced thermal characteristics and  

making it ideal in a variety of  

With these improvements, multiple  

devices can be used in an application with dramatically  

reduced board space.

 

The package is designed for  

vapor phase, infra red, or wave soldering techniques.  

Power dissipation of greater than 0.8W is possible in a  

typical PCB mount application.  

1

2

3

4

8

S1  

G1  

S2  

D1  

7

D1  

6

D2  

5

D2  

G2  

SOP-8  

l

l

l

l

l

l

l

Generation V Technology  

Ultra Low On-Resistance  

Dual N-Channel Mosfet  

Surface Mount  

Dynamic dv/dt Rating  

Fast Switching  

Lead-Free  

Features  

V

DS (V)

= 55V  

l

I

D

= 4.7A

 

(V

GS

=10V)  

l

30m  

45m  

(V

GS

= 10V)  

(V

GS

= 4.5V)  

R

DS(ON)  

R

DS(ON)  

l

l

Absolute Maximum Ratings  

Parameter  

Drain- Source Voltage  

Max.  

55  

Units  

V

V

DS  

I

D

@ T

C

= 25°C  

I

D

@ T

C

= 70°C  

I

DM  

Continuous Drain Current, V

GS

@ 10V  

Continuous Drain Current, V

GS

@ 10V  

Pulsed Drain Current



 

4.7  

3.8  

38  

A

P

D

@T

C

= 25°C  

P

D

@T

C

= 70°C  

Power Dissipation  

2.0  

1.3  

0.016  

± 20  

30  

W

Power Dissipation  

Linear Derating Factor  

W/°C  

V

GS  

Gate-to-Source Voltage  

V

V

V

GSM  

E

AS  

Gate-to-Source Voltage Single Pulse tp<10µs  

Single Pulse Avalanche Energy

‚  

Peak Diode Recovery dv/dt

ƒ  

Junction and Storage Temperature Range  

72  

dv/dt  

T

J,

T

STG  

5.0  

V/ns  

°C  

-55 to

 

+ 150  

Thermal Resistance  

Parameter  

Maximum Junction-to-Ambient

ꢀ

 

Typ.  

Max.  

62.5  

Units  

°C/W  

R

θ

JA  

1

UTD Semiconductor Co.,Limited  

R

UMW  

IRF7341  

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Min. Typ. Max. Units  

Conditions  

V

(BR)DSS  

Drain-to-Source Breakdown Voltage  

55  

V

V

GS

= 0V, I

D

= 250µA  

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient  

0.059  

V/°C Reference

 

to 25°C, I

D

= 1mA  

= 10V, I

D

= 4.7A

„  

= 4.5V, I

D

= 3.8A

„  

30  

45  

V

GS  

V

GS  

Drain-to-Sourc

e

O

n-Resistance  

m

Ω  

V

GS(th)  

g

fs  

Gate Threshold Voltage  

1.0  

7.9  

V

S

V

DS

= V

GS

, I

D

= 250µA  

V

DS

= 10V, I

D

= 4.5A  

V

DS

= 55V, V

GS

= 0V  

V

DS

= 55V, V

GS

= 0V, T

J

= 55°C  

V

GS

= -20V  

Forward Transconductance  

2.0  

25  

I

DSS  

I

GSS  

Drain-to-Sourc

e

L

eakag

e

C

urrent  

µA  

nA  

Gate-to-Source Forward Leakage  

Gate-to-Sourc

e

R

evers

e

L

eakage  

Total Gate Charge  

-100  

100  

36  

V

GS

= 20V  

Q

g  

24  

I

D

= 4.5A  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-to-Source Charge  

Gate-to-Drain (“Miller”) Charge  

Turn-On Delay Time  

Rise Time  

2.3 3.4  

nC V

DS

= 44V  

7.0  

8.3  

10  

12  

V

GS

= 10V, See Fig. 10

„  

V

DD

= 28V  

3.2 4.8  

I

D

= 1.0A  

ns  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fall Time  

32  

13  

48  

20  

R

G

= 6.0

Ω  

R

D

= 16

Ω

,

„  

V

GS

= 0V  

C

iss  

C

oss  

C

rss  

Input Capacitance  

740  

190  

71  

Output Capacitance  

pF  

V

DS

= 25V  

Reverse Transfer Capacitance  

ƒ = 1.0MHz, See Fig. 9  

Source-Drain Ratings and Characteristics  

Parameter  

Continuou

s

S

ourc

e

C

urrent  

(Bod

y

D

iode)  

Min. Typ. Max. Units  

Conditions  

MOSFET symbol  

showing the  

D

S

I

S  

2.0  

A

38  

G

I

SM  

Pulse

d

S

ourc

e

C

urrent  

(Body Diode)

  

integra

l

r

everse  

p-

n

j

unctio

n

d

iode.  

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse RecoveryCharge  

1.2  

90  

V

T

J

= 25°C, I

S

= 2.0A, V

GS

= 0V

ƒ  

60  

ns  

T

J

= 25°C, I

F

= 2.0A  

Q

rr  

120 170  

nC di/dt

 

= -100A/µs

ƒ  

Notes:  



Repetitive rating;

 

pulse width limited by  

max. junction temperature. ( See fig. 11 )  

‚

Starting T

J

= 25°C, L = 6.5mH  

R

G

= 25

Ω

, I

AS

= 4.7A. (See Figure 8)  

ƒ

I

SD

≤

4.7A, di/dt

≤

220A/µs, V

DD

≤

V

(BR)DSS  

T

J

≤

150°C  

,

„

ꢀ

Pulse width

≤

300µs; duty cycle

≤

2%.  

When mounted on 1 inch square copper board,

 

t<10 sec  

2

UTD Semiconductor Co.,Limited  

R

UMW  

IRF7341  

(25 °C, unless otherwise noted)  

100  

10  

1

100  

10  

1

VGS  

15V  

12V  

10V  

8.0V  

6

4

.

.

0

5

V

V  

4.0V  

3.5V  

VGS  

15V  

12V  

10V  

8.0V  

TOP  

TOP  

6.0V  

4.5V  

4.0V  

3.5V  

BOTTOM 3.0V  

BOTTOM 3.0V  

3.0V  

3.0V  

20µs PULSE WIDTH  

°

T =

 

25 C  

J

20µs PULSE WIDTH  

°

T =

 

150 C  

J

0.1  

1

10  

100  

0.1  

1

10  

100  

V

, Drain-to-Source Voltage (V)  

V

, Drain-to-Source Voltage (V)  

DS  

DS  

Fig 1.

 

Typical Output Characteristics  

Fig 2.

 

Typical Output Characteristics  

100  

10  

1

100  

10  

1

°

T =

 

25 C  

J

°

T =

 

150 C  

J

°

T =

 

150 C  

J

°

T =

 

25 C  

J

V

= 25V  

DS  

V

= 0 V  

20µs PULSE WIDTH  

GS  

0.1  

0.2  

3

4

5 6  

0.5  

0.8  

1.1  

1.4  

V

, Gate-to-Source Voltage (V)  

V

,Source-to-Drain Voltage (V)  

GS  

SD  

Fig 4.

 

Typical Source-Drain Diode  

Fig 3.

 

Typical Transfer Characteristics  

Forward Voltage  

3

UTD Semiconductor Co.,Limited  

R

UMW  

IRF7341  

(25 °C, unless otherwise noted)  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

0.120  

0.100  

0.080  

0.060  

0.040  

4.7A  

=

I

D

VGS = 4.5V  

VGS = 10V  

V

=

1

0V  

GS  

-60 -40 -20  

0

20 40 60 80

 

100 120 140 160  

°

0

10  

20  

30  

40  

T ,

 

Junction Temperature (

 

C)  

J

I

, Drain Current (A)  

D

Fig 6.

 

Typical On-Resistance Vs. Drain  

Fig 5.

 

Normalized On-Resistance  

Current  

Vs. Temperature  

0.12  

0.10  

0.08  

0.06  

0.04  

200  

I

D

TOP  

2.1A  

3.8A  

160  

120  

80  

40  

0

BOTTOM 4.7A  

I

= 4.7A  

D

A

0

2

4

6

8

10  

25  

50  

75  

100  

125  

150  

°

Starting T

 

, Junction Temperature

 

( C)  

J

V

GS

, Gate-to-Source Voltage (V)  

Fig 7.

 

Typical On-Resistance Vs. Gate  

Fig 8.

 

Maximum Avalanche Energy  

Voltage  

Vs. Drain Current  

4

UTD Semiconductor Co.,Limited  

R

UMW  

IRF7341  

1000  

800  

600  

400  

200  

0

20  

16  

12  

8

V

= 0V,  

f = 1MHz  

C SHORTED  

ds  

GS  

I =  

4.5A  

D

C

= C

 

+ C  

iss  

gs  

gd ,  

V

V

V

= 48V  

= 30V  

= 12V  

DS  

DS  

DS  

C

= C  

rss  

gd  

C

= C

 

+ C  

oss  

ds  

gd  

C

iss  

C

oss  

4

C

rss  

0

0

10  

20  

30  

40  

1

10  

100  

Q ,

 

Total Gate Charge (nC)  

V

, Drain-to-Source Voltage (V)  

G

DS  

Fig 9.

 

Typical Capacitance Vs.  

Fig 10.

 

Typical Gate Charge Vs.  

Drain-to-Source Voltage  

Gate-to-Source Voltage  

100  

10  

1

D = 0.50  

0.20  

0.10  

0.05  

0.02  

0.01  

P

2

DM  

t

1

SINGLE PULSE  

(THERMAL RESPONSE)  

t

2

Notes:  

1. Duty factor D =  

t /

 

t  

1

2. Peak T

 

=

P  

J

x Z  

+ T  

A

DM  

thJA  

0.1  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

t ,

 

Rectangular Pulse Duration (sec)  

1

Fig 11.

 

Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

5

UTD Semiconductor Co.,Limited  

R

UMW  

IRF7341  

SO

P-8  

Dimensions In Millimeters  

Dimensions In Inches  

Min Max  

Symbol  

Min  

Max  

A

A1  

A2  

b

c

D

E

E1  

e

L

1.350  

0.100  

1.350  

0.330  

0.170  

4.700  

3.800  

5.800  

1.750  

0.250  

1.550  

0.510  

0.250  

5.100  

4.000  

6.200  

0.053  

0.004  

0.053  

0.013  

0.006  

0.185  

0.150  

0.228  

0.069  

0.010  

0.061  

0.020  

0.010  

0.200  

0.157  

0.244  

1.270(BSC)  

0.050(BSC)  

0.050  

0.400  

1.270  

0.016  

θ

0°  

8°  

0°  

8°  

6

UTD Semiconductor Co.,Limited  

R

UMW  

IRF7341  

Ordering information  

Package  

SOP-8  

Deliverymode  

Baseqty  

3000  

Order code  

Tape and

 

reel  

UMW IRF7341TR  

7

UTD Semiconductor Co.,Limited