UMW-Youtai-Semiconductor-Co—Ltd–IRF7342TR-UMW
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R
UMW
IRF7342
Dual P-Channel MOSFET
Features
V
DS (V)
=-55V
R
DS(ON)
l
l
l
l
105m (
V
GS
=-10V)
170m (
V
GS
=-4.5V)
1
2
3
4
8
7
S1
G1
S2
D1
D1
R
DS(ON)
Generation V Technology
l
Ultra Low On-Resistance
6
5
l
l
l
l
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Lead-Free
D2
D2
G2
Top View
Description
The SOP-8 has been modified through a customized
leadframe for enhanced thermal characteristics
and
multiple-die capability making it
ideal in a variety
of power applications.
With these improvements,
multiple devices can be used in an
application
with dramatically reduced
board space.
The packa-
ge is designed for vapor phase, infra red, or wave
soldering techniques.
Power dissipation of
greater
than 0.8W is possible
in a
typical PCB
mount app-
lication.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-55
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
-3.4
-2.7
A
-27
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
Power Dissipation
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
± 20
30
W/°C
V
GS
Gate-to-Source Voltage
V
V
V
GSM
E
AS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
114
dv/dt
T
J,
T
STG
5.0
V/ns
°C
-55 to
+ 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
ꢀ
Typ.
Max.
62.5
Units
°C/W
R
θ
JA
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7342
Dual P-Channel MOSFET
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
GS
= 0V, I
D
= -250µA
V/°C Reference
to 25°C, I
D
= -1mA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
-0.054
95 105
= -10V, I
D
= -3.4A
= -4.5V, I
D
= -2.7A
V
GS
V
GS
R
DS(on)
Stati
c
D
rain-to-Sourc
e
O
n-Resistance
Ω
m
150 170
V
GS(th)
g
fs
Gat
e
T
hreshol
d
V
oltage
-1.0
3.3
V
V
DS
= V
GS
, I
D
= -250µA
Forward Transconductance
S
V
DS
= -10V, I
D
= -3.1A
V
DS
= -55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
-2.0
-25
I
DSS
I
GSS
Drain-to-Sourc
e
L
eakag
e
C
urrent
µA
Gate-to-Sourc
e
F
orwar
d
L
eakage
Gate-to-Sourc
e
R
evers
e
L
eakage
Total Gate Charge
-100
100
nA
V
GS
= 20V
Q
g
26
38
I
D
= -3.1A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
3.0 4.5
nC V
DS
= -44V
V
GS
= -10V, See Fig. 10
8.4
14
13
22
15
64
32
V
DD
= -28V
I
D
= -1.0A
10
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
43
R
G
= 6.0
Ω
22
R
D
= 16
Ω
,
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
690
210
86
Output Capacitance
pF
V
DS
= -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuou
s
S
ourc
e
C
urrent
(Bod
y
D
iode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
-2.0
A
-27
G
I
SM
Pulse
d
S
ourc
e
C
urrent
(Body Diode)
integra
l
r
everse
p-
n
j
unctio
n
d
iode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
-1.2
80
V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
54
ns
T
J
= 25°C, I
F
= -2.0A
Q
rr
85 130
nC di/dt
= -100A/µs
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 20mH
R
G
= 25
Ω
, I
AS
= -3.4A. (See Figure 8)
I
SD
≤
-3.4A, di/dt
≤
-150A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Pulse width
≤
300µs; duty cycle
≤
2%.
ꢀ
When mounted on 1 inch square copper board,
t<10 sec
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7342
Dual P-Channel MOSFET
100
100
10
1
VGS
-15V
-12V
-10V
-8.0V
–
4
.
5
V
V
-4.0V
-3.5V
VGS
-15V
-12V
-10V
-8.0V
–
–
4
.
5
V
-4.0V
-3.5V
TOP
TOP
BOTTOM -3.0V
BOTTOM -3.0V
10
-3.0V
-3.0V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T =
150 C
J
°
T =
25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
10
100
°
T =
25 C
J
°
T =
150 C
J
°
T =
150 C
J
10
°
T =
25 C
J
1
V
= -25V
DS
V
= 0 V
GS
1.2
20µs PULSE WIDTH
0.1
0.2
1
0.4
0.6
0.8
1.0
1.4
3
4
5
6 7
-V ,Source-to-Drain
Voltage (V)
SD
-V ,
Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7342
Dual P-Channel MOSFET
2.0
0.240
0.200
0.160
0.120
0.080
-3.4 A
=
I
D
1.5
1.0
0.5
0.0
VGS = -4.5V
VGS = -10V
V
=
–
10V
GS
0
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
-I ,
Drain Current (A)
T ,
Junction Temperature (
C)
J
D
Fig 6.
Typical On-Resistance Vs. Drain
Fig 5.
Normalized On-Resistance
Current
Vs. Temperature
0.45
300
I
D
TOP
-1.5A
-2.7A
250
200
150
100
50
BOTTOM -3.4A
0.35
0.25
0.15
0.05
I
= -3.4 A
D
0
A
25
50
75
100
125
150
2
5
8
11
14
°
Starting T
, Junction Temperature
( C)
J
–
V
GS
, Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Fig 8.
Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7342
Dual P-Channel MOSFET
1200
960
720
480
240
0
20
16
12
8
V
= 0V,
f = 1MHz
gd ,
ds
I
D
=
-3.1A
GS
V
V
V
=-48V
=-30V
=-12V
C
= C
+ C
C
SHORTED
DS
DS
DS
iss
gs
C
= C
gd
rss
C
= C
+ C
ds
oss
gd
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
-V ,
Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 10.
Typical Gate Charge Vs.
Fig 9.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7342
Dual P-Channel MOSFET
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7342
Dual P-Channel MOSFET
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW IRF7342TR
7
UTD Semiconductor Co.,Limited
