UMW-Youtai-Semiconductor-Co—Ltd–IRF7403TR-UMW
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R
UMW
IRF7403
Features
l
Generation VTechology
Ultra Low On
-Resistance N-
ChannelMo
sfet
Surface Mount
Dynamic dv/dt Rating
Fast Switching
A
A
D
1
2
3
4
8
S
S
S
G
l
l
l
l
7
6
5
D
D
D
Lead-Free
Top View
Description
The SOP-8 has been modified throuah a customized leadframe
for enhanced thermal characteristics and multiple-die capability
making it ideal in a variety of power applications. With these im-
provements, multiple devices can be used in an application with
dramatically reduced board space.The package is designed for
vapor phase. infra red. or wave so derina techniaues.Power dis-
sipation of qreater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
Parameter
Max.
Units
10V9.7
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
10 Sec. Pulsed Drain Current, V
GS
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
@
@
@
10V8.5
A
10V5.4
34
2.5
P
D
@T
A
= 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.02
±20
5.0
V
GS
Gate-to-Source Voltage
dv/dt
T
J,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to
+ 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
50
Units
°C/W
R
θ
JA
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7403
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30
0.024
V/°C Reference
to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
0.022
0.035
1.0
8.4
1.0
25
100
-100
57
6.8
18
10
37
42
40
V
GS
= 10V, I
D
= 4.0A
GS
= 4.5V, I
D
= 3.4A
R
DS(ON)
Static Drain-to-Source On-Resistance
Ω
V
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 15V, I
D
= 4.0A
Forward Transconductance
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
µA
nA
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= -20V
I
D
= 4.0A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 24V
V
GS
= 10V, See Fig. 6 and 12
V
DD
= 15V
I
D
= 4.0A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.0
Ω
R
D
= 3.7
Ω,
See Fig. 10
D
S
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
2.5
4.0
Between lead tip
nH
pF
G
and center of die contact
C
iss
C
oss
C
rss
Input Capacitance
1200
450
160
V
GS
= 0V
Output Capacitance
V
DS
= 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
3.1
A
G
I
S
M
Pulsed Source Current
(Body Diode)
integral reverse
1.0
52
78
93 140
34
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.0A
ns
nC
Q
rr
t
on
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.0A, di/dt
≤
180A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board,
t
≤
10sec.
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7403
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
100
1
0.01
1
0.01
A
100
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 6.7A
D
°
T =
25 C
J
°
T =
150 C
J
V
=
15V
DS
20µs PULSE WIDTH
V
= 10V
GS
A
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80
100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
T ,
Junction Temperature (°C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7403
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2400
2000
1600
1200
800
400
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
V
= 4.0A
= 24V
GS
iss
rss
oss
D
DS
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
= C
+ C
ds
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
A
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
T =
25°C
T =
150°C
J
J
1ms
10ms
°
T =
25 C
A
J
°
T =
150 C
Single Pulse
V
= 0V
GS
2.5
A
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
3.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7403
R
D
V
DS
V
GS
10.0
D.U.T.
R
G
+
V
DD
–
8.0
6.0
4.0
2.0
0.0
10 V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
25
50
75
100
125
°
150
V
GS
T ,
Case Temperature
( C)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9.
Maximum Drain Current Vs.
Fig 10b.
Switching Time Waveforms
Ambient Temperature
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7403
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
.3
µ
F
12V
Q
G
+
10 V
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 12a.
Basic Gate Charge Waveform
Fig 12b.
Gate Charge Test Circuit
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7403
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Min
Symbol
Min
Max
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7403TR
Marking
Ordering information
Package
SOP-8
Deliverymode
Baseqty
3000
Order code
Tape and
reel
UMW IRF7403TR
8
UTD Semiconductor Co.,Limited
