UMW-Youtai-Semiconductor-Co—Ltd–IRF7404TR-UMW
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R
UMW
IRF7404
P
–
Channel MOSFET
V
DS (V)
=-55V
l
l
l
A
1
2
3
4
8
20 m
(
V
GS
=-4.5V)
60 m
(
V
GS
=-2.7V)
R
DS(ON)
R
DS(ON)
S
S
D
7
D
l
Generation V Technology
l
Ultra Low On-Resistance
6
S
G
D
l
Surface Mount
5
l
Dynamic dv/dt Rating
l
Fast Switching
D
l
Lead-Free
SOP-8
Description
The SOP-8 has been modified through a customi-
zed eadframe for enhanced thermal characteristics
and multiple-die capabilitv making it
ideal in
a
varietyof powerapplications.Withthese improve-
ments.multiple devices can be used in an
appli-
cation with dramatically reduced board space.
The
package is desianed fon vapor phase. inra rea. or
wave so gerina technigues Power dissipation of
greater than 0.8W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
-7.7
-6.7
-5.4
-27
A
P
D
@T
A
= 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 12
-5.0
V
GS
Gate-to-Source Voltage
dv/dt
T
J
,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to
+ 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
θ
JA
Maximum Junction-to-Ambient
50
°C/W
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7404
P
–
Channel MOSFET
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
V
GS
= 0V, ID = -250µA
V/°C Reference
to 25°C, I
D
= -1mA
V
(BR)DSS
-20
V
∆
V
(BR)DSS
/
∆
T
Breakdown Voltage Temp. Coefficient
-0.012
J
40
60
V
GS
= -4.5V, I
D
= -3.2A
R
DS(ON)
Static Drain-to-Source On-Resistance
m
Ω
V
GS
= -2.7V, I
D
= -2.7A
V
GS(th)
g
fs
Gate Threshold Voltage
-0.70
6.8
V
V
DS
= V
GS
, I
D
= -250µA
Forward Transconductance
Drain-to-Source Leakage Current
S
µA
V
DS
= -15V, I
D
= -3.2A
I
DSS
-1.0
-25
-100
100
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
V
GS
= 12V
Q
g
50
5.5
21
I
D
= -3.2A
gs
Q
Gate-to-Source Charge
nC V
DS
= -16V
V
GS
= -4.5V, See Fig. 6 and 12
Q
gd
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
t
d(on)
14
V
DD
= -10V
ns
t
r
Rise Time
32
I
D
= -3.2A
t
d(off)
Turn-Off Delay Time
100
R
G
= 6.0
Ω
t
Fall Time
65
R
D
= 3.1
Ω,
See Fig. 10
D
S
f
L
D
Internal Drain Inductance
2.5
Between lead tip
nH
pF
G
and center of die contact
L
S
Internal Source Inductance
4.0
C
iss
C
oss
C
rss
Input Capacitance
1500
730
V
GS
= 0V
Output Capacitance
V
DS
= -15V
= 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
340
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
-3.1
A
G
I
S
M
Pulsed Source Current
(Body Diode)
integral reverse
-27
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
-1.0
V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
69 100
71 110
ns
T
J
= 25°C, I
F
= -3.2A
µC di/dt
= 100A/µs
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-3.2A, di/dt
≤
-65A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board,
t
≤
10sec.
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7404
P
–
Channel MOSFET
1000
100
10
1000
VGS
– 7.5V
– 5
.
0
V
– 4
.
0
V
– 3
.
5
V
– 3
.
0
V
– 2
.
5
V
– 2
.
0
V
VGS
– 7
.
5
V
– 5.0V
– 4.0V
– 3.5V
– 3.0V
– 2.5V
– 2.0V
TOP
TOP
100
10
1
BOTTOM – 1.5V
BOTTOM – 1.5V
-1.5V
1
-1.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
100
0.1
0.01
0.1
0.01
A
0.1
1
10
100
0.1
1
10
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
100
10
1
I
= -5.3A
D
T =
25°C
J
1.5
1.0
0.5
0.0
T
J
= 150°C
V
DS
= -15V
20µs PULSE WIDTH
V
= -4.5V
GS
A
5.0
A
-60 -40 -20
0
20 40 60 80
100 120 140 160
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T ,
Junction Temperature (°C)
–
V
GS
, Gate-to-Source Voltage (V)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7404
P
–
Channel MOSFET
10
8
3000
2000
1000
I
V
= -3.2A
= -16V
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
D
DS
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
= C
+ C
ds
gd
C
iss
6
C
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
1
A
A
0
10
20
30
40
50
60
10
100
Q ,
Total Gate Charge (nC)
-V ,
Drain-to-Source Voltage (V)
G
DS
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T =
150°C
J
T =
25°C
J
1ms
10ms
°
T =
25 C
A
J
°
T =
150 C
Single Pulse
V
= 0V
GS
0.1
0.2
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7404
P
–
Channel MOSFET
8.0
6.0
4.0
2.0
R
D
D.U.T.
V
DS
V
GS
R
G
A
+
–
V
DD
-4.5V
≤
Pulse Width
1µs
≤
Duty Factor
0.1%
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7404
P
–
Channel MOSFET
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
.3
µ
F
12V
Q
G
–
-4.5 V
V
+
DS
D.U.
T
.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12b.
Gate Charge Test Circuit
Fig 12a.
Basic Gate Charge Waveform
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7404
P
–
Channel MOSFET
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7404
P
–
Channel MOSFET
Ordering information
Package
SOP-8
Deliverymode
Baseqty
3000
Order code
Tape and
reel
UMW IRF7404TR
8
UTD Semiconductor Co.,Limited
