UMW-Youtai-Semiconductor-Co—Ltd–IRF7406TR-UMW
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R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
Description
The SOP-8 has bee
n modified through a customized leadframe
for enhanced therma
characteristics and multiple-die capability
making it ideal in a variety of power applications. With these
improvements multiple devices can be used in an application
with dramatically reduced board space.The package is desig-
ned for vapor phase,infra redor wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a typical
PCB mount application.
A
1
2
8
7
D
S
S
D
3
4
6
5
S
G
D
D
Top View
Features
l
Generation VTechnology
l
Ultra Low On-Resistance
l
P-Channel Mosfet
l
Surface Mount
Available in Tape&Reel
Dynamic dv/dt Rating
Fast Switching
l
l
l
l
Lead-Free
Absolute Maximum Ratings
Parameter
Max.
-6.7
-5.8
-3.7
-23
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
10 Sec. Pulsed Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
A
P
D
@T
A
= 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 20
-5.0
V
GS
Gate-to-Source Voltage
dv/dt
T
J
,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to
+ 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Typ.
Max.
50
Units
°C/W
R
θ
JA
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30
-0.020
V/°C Reference
to 25°C, I
D
= -1mA
Conditions
Dr
ain-to-Source Breakdown Voltage
V
V
GS
= 0V, ID = -250µA
45
70
-1.0
3.1
-1.0
-25
-100
100
59
5.7
21
16
33
45
47
V
GS
= -10V, I
D
= -2.8A
V
GS
= -4.5V, I
D
= -2.4A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -15V, I
D
= -2.8A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
R
DS(ON)
Static Drain-to-Source On-Resistance
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
V
Forward Transconductance
S
µA
nA
I
D
SS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 20V
Q
g
I
D
= -2.8A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
nC
ns
V
DS
= -2.4V
V
GS
= -10V, See Fig. 6 and 12
V
DD
= -15V
Ris
e
T
ime
I
D
= -2.8A
t
d(off)
t
f
Turn-Off Delay Time
Fal
l
T
ime
R
G
= 6.0
Ω
R
D
= 5.3
Ω,
See Fig. 10
D
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
2.5
4.0
Between lead tip
nH
pF
G
and center of die contact
S
C
iss
C
oss
C
rss
Input Capacitance
1100
490
220
V
GS
= 0V
Output Capacitance
V
DS
= -25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFE
T
s
ymbol
D
S
I
S
-3.1
A
showing the
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
-23
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-1.0
V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
42
64
63
96
ns
T
J
= 25°C, I
F
= -2.8A
Q
rr
t
on
nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-2.8A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board,
t
≤
10sec.
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
1000
VGS
VGS
TOP
– 15V
TOP
– 15V
– 10V
– 8.0V
– 7.0V
– 6.0V
– 5.5V
– 5.0V
– 10V
– 8.0V
– 7.0V
– 6.0V
– 5.5V
– 5.0V
BOTTOM –
4.5V
BOTTOM –
4.5V
100
10
1
100
10
1
-4.5V
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
100
A
0.1
1
10
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
0.0
I
= -4.7A
D
T =
25°C
J
100
T
J
= 150°C
V
DS
= -15V
20µs PULSE WIDTH
V
= -10V
GS
10
A
10
A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80
100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T ,
Junction Temperature (°C)
J
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs
.
T
emperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2500
2000
1500
1000
500
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
V
= -2.8A
D
DS
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
= -24V
gs
gd
gd
ds
= C
= C
+ C
ds
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
A
A
1
10
100
0
20
40
60
-V ,
Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
T =
150°C
J
T =
25°C
J
1ms
10ms
°
T =
25 C
A
J
°
T =
150 C
Single Pulse
V
GS
= 0V
A
0.1
0.1
1
10
100
0.3
0.6
0.9
1.2
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forwar
d
V
oltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
6.0
R
D
V
DS
5.0
4.0
3.0
2.0
1.0
0.0
V
GS
D.U.T.
R
G
–
+
V
DD
-10V
Puls
e
W
idth
≤ 1
µs
Duty Facto
r
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambien
t
T
emperature
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
.3
µ
F
12V
Q
G
–
-10V
V
+
DS
D.U.
T
.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 12a.
Basic Gate Charge Waveform
Fig 12b.
Gate Charge Test Circuit
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7406
P-Channel 30 V (D-S) MOSFET
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW IRF7406TR
8
UTD Semiconductor Co.,Limited
