UMW-Youtai-Semiconductor-Co—Ltd–IRF7413TR-UMW
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R
UMW
IRF7413
A
D
1
2
3
4
8
7
l
S
S
S
G
Generation VTechnology
l
l
l
l
l
l
l
l
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape &Reel
Dynamic dv/dt Rating
Fast Switching
D
D
D
6
5
100% Rg Tested
Lead-Free
Top View
Features
V
DS (V)
= 30V
R
DS(ON)
R
DS(ON)
12m
17m
(V
GS
= 10V)
(V
GS
= 4.5V)
Absolute Maximum Ratings
S
y
mbol
Parameter
Drain-to-Source Volta
Gate-to-Source Volta
Max
30
Units
V
DS
g
e
V
V
g
e
± 20
13
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
I
I
I
@ T
A
= 25°C
D
D
@ T
A
= 70°C
9.2
58
A
P
u
l
se
d D
ra
Power Dissipation
Linear Derating Factor
i
n
C
urren
t
DM
P
@T
A
= 25°C
2.5
W
mW/°C
mJ
D
0.02
260
Si gl
se va
anc
h
e
E
ner
g
enc
y
n
e
P
u
l
A
l
E
AS
V/ns
°C
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
J,
T
STG
T
-55 to +150
Thermal Resistance Ratings
S
y
mbol
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
T
–––
y
p
Max
20
Units
R
θ
JL
R
θ
JA
°C/W
–––
50
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7413
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max
Units
Conditions
Dra
in-to-Source Breakdown Voltage
30
–––
–––
V
V
GS
= 0V, I
D
= 250µA
Brea
kdown Voltage Temp. Coefficient
––– 0.034 –––
V/°C Reference
to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.3A
V
GS
= 4.5V, I
D
= 3.7A
V
DS
= V
GS
, I
D
= 250µA
–––
–––
12
R
DS(on)
Static Drain-to-Source On-Resistance
m
Ω
–––
1.0
–––
–––
17
3.0
V
GS(th)
g
fs
Gate Threshold Voltage
V
Forward Transconductance
10
–––
–––
–––
–––
12
S
V
DS
= 10V, I
D
= 3.7A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 30V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
––– -100
V
GS
= -20V
nA
–––
52
100
79
V
GS
= 20V
I
D
= 7.3A
Q
g
Q
gs
Q
gd
R
G
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Gate Resistance
6.1
16
9.2
23
nC V
DS
= 24V
V
GS
= 10V, See Fig. 6 and 9
Ω
–––
8.6
50
3.7
–––
–––
–––
–––
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
V
DD
= 15V
I
D
= 7.3A
Ω
ns R
G
= 6.2
Turn-Off Delay Time
Fall Time
52
Ω,
46
R
G
= 2.0
See Fig. 10
C
iss
C
oss
C
rss
Input Capacitance
––– 1800 –––
V
GS
= 0V
Output Capacitance
–––
–––
680
240
–––
–––
V
DS
= 25V
pF
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
I
I
–––
–––
3.1
S
A
Pulsed Source Current
integral reverse
–––
–––
58
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
74
1.0
110
300
V
T =
25°C, I
= 7.3A, V
= 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
ns T
= 25°C, I
= 7.3A
J F
rr
di/dt = 100A/µs
Q
200
nC
rr
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 9.8mH
R
G
= 25
Ω
, I
AS
=7.3A. (See Figure 12)
I
SD
≤
7.3A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Pulse width
≤
300µs; duty cycle
≤
2%.
ꢀ
Surface mounted on FR-4 board
R
θ
is measured at T
J
approximately 90°C
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7413
Typical Ch
aracteristics
100
10
1
100
VGS
VGS
15V
TOP
15V
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7
.
0
V
5
.
5
V
4
.
5
V
4
.
0
V
3
.
5
V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
3.0V
20µs PULSE WIDTH
= 150°C
20µs PULSE WIDTH
= 25°C
T
J
T
J
A
A
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
I
= 7.3A
D
T =
150°C
J
T
J
= 25°C
10
V
DS
= 10V
20µs PULSE WIDTH
V
= 10V
GS
1
A
4.5
A
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
T ,
Junction Temperature (°C)
V
GS
, Gate-to-Source Voltage (V)
J
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7413
Typical Ch
aracteristics
20
16
12
8
3200
I
= 7.3A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
2800
2400
2000
1600
1200
800
= C
C
C
= C
+ C
iss
ds
gd
oss
C
rss
4
400
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
A
A
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T =
25°C
J
T =
150°C
J
100us
1ms
°
T =
25 C
C
J
10ms
°
T =
150 C
Single Pulse
V
GS
= 0V
1
0.1
A
1
10
100
0.4
1.2
2.0
2.8
3.6
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7413
R
D
V
DS
Q
G
V
GS
10V
D.U.T.
Q
Q
GD
GS
R
G
+
V
DD
–
V
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Charge
Fig 9a.
Basic Gate Charge Waveform
Fig 10a.
Switching Time Test Circuit
Current Regulator
Same Type as D.U.
T
.
V
DS
50K
Ω
90%
.2
µ
F
12V
.3
µ
F
+
V
DS
D.U.
T
.
–
10%
V
GS
V
GS
3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
/ t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7413
15V
DRIVER
+
L
V
DS
600
500
400
300
200
100
0
I
D
TOP
3.3A
6.0A
D.U.T
R
G
V
DD
–
BOTTOM 7.3A
I
A
AS
20V
0.01
Ω
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T
, Junction Temperature (
o
C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
Vs. Drain Current
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7413
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Min Max
Symbol
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7413
Ordering information
Package
SOP-8
Deliverymode
Baseqty
3000
Order code
Tape and
reel
UMW IRF7413TR
8
UTD Semiconductor Co.,Limited
