UMW-Youtai-Semiconductor-Co—Ltd–IRF7424TR-UMW
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R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
Description
multiple-die capability making it ideal in a variety of
power applications.
With these improvements, multiple
devices can be used in an application with dramatically
reduced board space.
The package is designed for
vapor phase, infrared, or wave soldering technique
s
A
1
2
8
7
D
S
S
D
3
4
6
5
S
G
D
D
V
DSS
-30V
R
DS(on)
max (m
W)
13.5@V
GS
= -10V
22@V
GS
= -4.5V
I
D
-11A
Top View
-8.8A
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-30
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
-11
-9.3
-47
A
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Power Dissipation
Power Dissipation
2.5
W
1.6
Linear Derating Factor
20
mW/°C
V
GS
Gate-to-Source Voltage
± 20
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to
+ 150
°C
Thermal Resistance
Parameter
Max.
Units
R
θ
JA
Maximum Junction-to-Ambient
50
°C/W
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= -250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.019 –––
V/°C Reference
to 25°C, I
D
= -1mA
––– ––– 13.5
––– –––
22
V
GS
= -10V, I
D
= -11A
V
GS
= -4.5V, I
D
= -8.8A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -10V, I
D
= -11A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
V
GS
= -20V
R
DS(on)
Static Drain-to-Source On-Resistance
m
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
-1.0 ––– -2.5
17 –––
–––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
––– 75 110
V
S
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
V
GS
= 20V
Q
g
I
D
= -11A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
––– 14
––– 12
21
18
nC V
DS
= -15V
V
GS
= -10V
––– 15 –––
––– 23 –––
––– 150 –––
––– 76 –––
––– 4030 –––
––– 580 –––
––– 410 –––
V
DD
= -15V
I
D
= -1.0A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.0
Ω
V
GS
= -10V
C
iss
C
oss
C
rss
Input Capacitance
V
GS
= 0V
Output Capacitance
pF
V
DS
= -25V
ƒ = 1.0kHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
I
S
MOSFET symbol
showing the
–
2.5
–
47
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
––– 40
––– 47
60
71
ns
T
J
= 25°C, I
F
= -2.5A
Q
rr
nC di/dt
= -100A/µs
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
100
10
100
10
VGS
TOP
-10V
TOP
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTO
M
–
2.5V
BOTTO
M
–
2.5V
1
-2.5V
-2.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T =
150 C
J
°
T =
25 C
J
1
0.1
0.1
0.1
1
10
100
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
100
-11A
=
I
D
°
T =
150 C
1.5
1.0
0.5
0.0
J
10
°
T =
25 C
J
1
V
= -15V
DS
20µs PULSE WIDTH
V
=
–
10V
GS
0.1
2.5
3.0
3.5
4.0 4.5
5.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
-V ,
Gate-to-Source Voltage (V)
GS
T ,
Junction Temperature (
C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5000
4000
3000
2000
1000
0
12
V
= 0V,
f = 1MHz
gd ,
ds
I =
-11A
D
GS
V
V
=-24V
=-15V
DS
DS
C
= C
+ C
C
SHORTED
iss
gs
C
= C
gd
rss
10
8
C
= C
+ C
ds
oss
gd
C
iss
6
4
C
oss
2
C
rss
0
1
10
100
0
20
40
60
80
-V ,
Drain-to-Source Voltage (V)
DS
Q ,
Total Gate Charge (nC)
G
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
150 C
J
100us
1ms
°
T =
25 C
J
°
T =
25 C
10ms
A
J
°
T =
150 C
V
= 0 V
GS
Single Pulse
0.1
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
-V ,Source-to-Drain
Voltage (V)
SD
-V ,
Drain-to-Source Voltage (V)
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
12
R
D
V
DS
10
8
V
GS
D.U.T.
R
G
–
+
V
DD
V
GS
6
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4
Fig 10a.
Switching Time Test Circuit
2
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
90%
Fig 9.
Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b.
Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
2
Notes:
1. Duty factor D =
2. Peak T
=
P
J
t /
t
1
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
0.035
0.030
0.025
0.020
0.015
0.010
0.030
0.025
0.020
0.015
0.010
V
= -4.5V
GS
I
= -11A
D
V
= -10V
GS
2.0
4.0
6.0
8.0
10.0
0
10
20
30
40
50
60
-V
Gate -to -Source Voltage
(V)
-I ,
Drain Current (A)
GS,
D
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.
T
.
50K
Ω
Q
G
.2
µ
F
12V
.3
µ
F
–
V
+
DS
Q
Q
GD
D.U.
T
.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
2.2
2.0
1.8
1.6
1.4
1.2
1.0
120
100
80
60
40
20
0
I
= -250µA
D
-75 -50 -25
0
25
50
75 100
125 150
0.001
0.010
0.100
1.000
10.000
100.000
T ,
Temperature ( °C )
Time (sec)
J
Fig 16
.
Typical Power Vs. Time
Fig 15.
Typical Vgs(th)
Vs.
Junction Temperature
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
8
UTD Semiconductor Co.,Limited
R
UMW
IRF7424
P-Channel 30 V (D-S) MOSFET
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW IRF7424TR
9
UTD Semiconductor Co.,Limited
