UMW-Youtai-Semiconductor-Co—Ltd–IRF7455TR-UMW
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R
UMW
IRF7455
Features
l
l
R
DS(ON)
R
DS(ON)
7.5m
9 m
(V
GS
= 10V)
(V
GS
= 4.5V)
1
2
3
4
8
7
D
D
D
S
S
Applications
6
5
S
l
High Frequency DC-DC Converters
with Synchronous Rectification
Lead-Free
G
D
l
Top View
Benefits
l
l
l
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
DS
Drain-Source Voltage
30
V
V
GS
Gate-to-Source Voltage
± 12
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
15
12
A
120
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
W/°C
°C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to
+ 150
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θ
JA
50
°C/W
Junction-to-Ambient
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 9.4mH
R
G
= 25
Ω
, I
AS
= 8.0A.
Pulse width
400µs; duty cycle
2%.
≤
≤
When mounted on 1 inch square copper board,
t<10 sec
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7455
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Dra
in-to-Source Breakdown Voltage
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
30
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
= 1mA
0.029
6.0
V/°C Reference
to 25°C, I
D
7.5
V
GS
= 10V, I
D
= 15A
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS
= 4.5V, I
D
= 12A
= 2.8V, I
D
= 3.5A
6.9
10
9
20
m
Ω
V
GS
V
GS(th)
I
DSS
Gate Threshold Voltage
0.6
2.0
20
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125C
V
GS
= 12V
µA
Drain-to-Source Leakage Current
100
200
-200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
I
GSS
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
44
Conditions
V
DS
= 10V, I
D
= 15A
I
D
= 15A
S
Q
g
37
8.9
13
56
13
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 24V
20
35
V
GS
= 5.0V
23
V
GS
= 0V, V
DS
= 16V
17
V
DD
= 15V
I
D
= 1.0A
18
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
51
R
G
= 6
Ω
V
GS
= 4.5V
44
C
iss
C
oss
C
rss
Input Capacitance
3480
870
100
V
GS
= 0V
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Symbol
E
AS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
300
15
Units
mJ
A
I
AR
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
I
S
Continuous Source Current
(Body Diode)
MOSFET symbol
2.5
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
120
S
V
SD
Diode Forward Voltage
1.2
V
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
Reverse Recovery Charge
64
99
96
ns
T
J
= 25°C, I
F
= 2.5A, V
R
= 20V
Q
rr
150
nC di/dt
= 100A/µs
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7455
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
100
10
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
BOTTO
M
2
.0V
2.0V
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T =
25 C
J
°
T =
150 C
°
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
10A
=
I
D
°
T =
150 C
J
2.0
1.5
1.0
0.5
0.0
°
T =
25 C
J
10
V
= 25V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
1
2.0
2.2
2.4
2.6 2.8
3.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T ,
Junction Temperatur
e
(
C
)
J
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7455
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
100000
10000
1000
100
I
D
=
8.0A
V
= 0V,
f = 1 MHZ
GS
C
= C
+ C
,
C
SHORTED
V
V
= 32V
= 20V
iss
gs
gd
ds
DS
DS
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
Ciss
6
Coss
4
2
Crss
10
10
0
1
100
0
10
20
30
40
50
60
Q ,
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
150 C
J
10
10us
100us
1ms
°
T =
25 C
J
1
°
T =
25 C
A
10ms
°
T =
150 C
Single Pulse
J
V
= 0 V
GS
1.8
1
0.1
0.2
0.1
1
10
100
0.6
1.0
1.4
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7455
10.0
R
D
V
DS
V
GS
10V
8.0
6.0
4.0
2.0
0.0
D.U.T.
R
G
+
V
DD
–
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
Fig 6.
On-Resistance Vs. Drain Current
t
t
r
t
t
f
d(on)
d(off)
Fig 10b.
Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
0.1
0.01
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
=
P
J
t /
t
1
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7455
0.030
0.025
0.020
0.015
0.010
0.020
0.018
0.016
0.014
0.012
0.010
V
= 2.7V
V
I
= 10A
GS
D
= 4.5V
30
GS
V
= 10V
50
GS
2
4
6
8
10
12
14
16
0
10
20
40
60
I
, Drain Current (A)
V
Gate -to -Source Voltage
(V)
D
GS,
Fig 12.
On-Resistance Vs. Drain Current
Fig 13.
On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.
T
.
Q
G
50K
Ω
.3
µ
F
V
GS
.2
µ
F
12V
Q
Q
GD
GS
+
800
V
DS
D.U.
T
.
I
–
D
V
G
TOP
3.6A
6.4A
BOTTOM 8.0A
V
GS
3mA
Charge
I
I
D
G
600
400
200
0
Current Sampling Resistors
Fig 13a&b.
Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
–
25
50
75
100
125
150
I
A
20V
°
Starting T
, Junction Temperature (
C)
Ω
0.01
t
p
J
I
AS
Fig 14c.
Maximum Avalanche Energy
Fig 14a&b.
Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7455
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Min Max
Symbol
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7455
Marking
Ordering information
Package
SOP-8
Deliverymode
Baseqty
3000
Order code
Tape and
reel
UMW IRF7455TR
8
UTD Semiconductor Co.,Limited
