UMW-Youtai-Semiconductor-Co—Ltd–IRF7470TR-UMW
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R
UMW
IRF7470
Benefits
l
l
1
2
3
4
8
7
D
D
D
R
DS(ON)
R
DS(ON)
13m
15m
(V
GS
(V
GS
=
=
10V)
S
S
4.5V)
6
5
S
Applications
G
D
l
High Frequency DC-DC Converters
with Synchronous Rectification
Lead-Free
Top View
l
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Drain-Source Voltage
Max.
40
Units
V
V
GS
Gate-to-Source Voltage
± 12
10
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
8.5
A
85
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
W/°C
°C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to
+ 150
Thermal Resistance
Symbol
R
θ
JL
Parameter
Junction-to-Drain Lead
Typ.
Max.
20
Units
R
θ
JA
Junction-to-Ambient
50
°C/W
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 9.4mH
R
G
= 25
Ω
, I
AS
= 8.0A.
Pulse width
≤
400µs; duty cycle
2%.
≤
When mounted on 1 inch square copper board,
t<10 sec
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7470
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
Drai
n-to-Source Breakdown Voltage
40
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
0.04
9.0
10
V/°C Reference
to 25°C, I
D
= 1mA
13
V
GS
= 10V, I
D
= 10A
R
DS(on)
V
GS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
15 m
Ω
V
GS
= 4.5V, I
D
= 8.0A
0.8
2.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 32V, V
GS
= 0V
µA
nA
I
DSS
I
GSS
Drain-to-Source Leakage Current
100
200
-200
V
DS
= 32V, V
GS
= 0V, T
J
= 125C
V
GS
= 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
27
Conditions
V
DS
= 20V, I
D
= 8.0A
I
D
= 8.0A
S
Q
g
29
7.9
8.0
23
44
12
12
35
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 20V
V
GS
= 4.5V
V
GS
= 0V, V
DS
= 16V
10
V
DD
= 20V
I
D
= 8.0A
1.9
21
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 1.8
Ω
V
GS
= 4.5V
V
GS
= 0V
3.2
3430
690
41
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 20V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Symbol
E
AS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
300
Units
mJ
A
I
AR
8.0
Diode Characteristics
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
85
S
0.80 1.3
0.65
V
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.0A, V
R
= 20V
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
72 110
130 200
76 110
150 230
ns
Q
rr
t
rr
nC di/dt
= 100A/µs
ns T
J
= 125°C, I
F
= 8.0A, V
R
=20V
nC di/dt
= 100A/µs
Q
rr
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7470
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
100
10
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
BOTTO
M
2
.0V
2.0V
2.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T =
25 C
J
°
T =
150 C
°
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
10A
=
I
D
°
T =
150 C
J
2.0
1.5
1.0
0.5
0.0
°
T =
25 C
J
10
V
= 25V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
1
2.0
2.2
2.4
2.6 2.8
3.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T ,
Junction Temperatur
e
(
C
)
J
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7470
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
100000
10000
1000
100
I
D
=
8.0A
V
= 0V,
f = 1 MHZ
GS
C
= C
+ C
,
C
SHORTED
V
V
= 32V
= 20V
iss
gs
gd
ds
DS
DS
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
Ciss
6
Coss
4
2
Crss
10
10
0
1
100
0
10
20
30
40
50
60
Q ,
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
150 C
J
10
10us
100us
1ms
°
T =
25 C
J
1
°
T =
25 C
A
10ms
°
T =
150 C
Single Pulse
J
V
= 0 V
GS
1.8
1
0.1
0.2
0.1
1
10
100
0.6
1.0
1.4
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7470
10.0
R
D
V
DS
V
GS
10V
8.0
6.0
4.0
2.0
0.0
D.U.T.
R
G
+
V
DD
–
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
Fig 6.
On-Resistance Vs. Drain Current
t
t
r
t
t
f
d(on)
d(off)
Fig 10b.
Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
0.1
0.01
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
=
P
J
t /
t
1
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7470
0.030
0.025
0.020
0.015
0.010
0.020
0.018
0.016
0.014
0.012
0.010
V
= 2.7V
V
I
= 10A
GS
D
= 4.5V
30
GS
V
= 10V
50
GS
2
4
6
8
10
12
14
16
0
10
20
40
60
I
, Drain Current (A)
V
Gate -to -Source Voltage
(V)
D
GS,
Fig 12.
On-Resistance Vs. Drain Current
Fig 13.
On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.
T
.
Q
G
50K
Ω
.3
µ
F
V
GS
.2
µ
F
12V
Q
Q
GD
GS
+
800
V
DS
D.U.
T
.
I
–
D
V
G
TOP
3.6A
6.4A
BOTTOM 8.0A
V
GS
3mA
Charge
I
I
D
G
600
400
200
0
Current Sampling Resistors
Fig 13a&b.
Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
–
25
50
75
100
125
150
I
A
20V
°
Starting T
, Junction Temperature (
C)
Ω
0.01
t
p
J
I
AS
Fig 14c.
Maximum Avalanche Energy
Fig 14a&b.
Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7470
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Min Max
Symbol
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7470
Marking
Ordering information
Package
SOP-8
Deliverymode
Baseqty
3000
Order code
Tape and
reel
UMW IRF7470TR
8
UTD Semiconductor Co.,Limited
