UMW-Youtai-Semiconductor-Co—Ltd–IRF7807TR-UMW
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R
UMW
IRF7807
Features
A
A
D
1
2
3
4
8
7
V
DS (V)
= 30V
S
S
13.8m
18.2m
(V
GS
= 10V)
D
R
DS(ON)
(V
GS
= 4.5V)
6
5
S
D
D
Applications
G
Contro
l
F
E
T
f
o
r
N
oteboo
k
P
rocesso
r
P
ower
Synchronous Rectifier MOSFET for
Graphics Cards and POL Converters in
Networking and Telecommunication Systems
Top View
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
DS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
V
V
± 20
11
GS
I
I
I
@ T
A
= 25°C
D
D
@ T
A
= 70°C
8.7
88
A
DM
Power Dissipation
P
P
@T
A
= 25°C
@T
A
= 70°C
2.5
1.6
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
W/°C
°C
T
-55 to
+ 150
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
R
θ
R
θ
°C/W
JL
–––
50
JA
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.6mH
R
G
= 25
Ω
, I
AS
= 8.8A.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
1
UTD Semiconductor Co.,Limited
R
UMW
IRF7807
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
30 –––
–––
Conditions
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250µA
Breakdown Voltage Temp. Coefficient
––– 0.023 –––
V/°C Reference
to 25°C, I
D
= 1mA
Ω
m
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
22
11
14.5 18.2
1.8 2.25
– 4.7
––– mV/°C
13.8
V
GS
= 10V, I
D
= 11A
V
GS
= 4.5V, I
D
= 8.8A
DS
= V
GS
, I
D
= 250µA
V
GS(th)
Gate Threshold Voltage
V
V
∆
V
GS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
I
DSS
–––
–––
–––
–––
–––
7.2
2.1
0.7
2.7
1.7
3.4
2.8
2.5
6.9
6.2
10
1.0
150
100
-100
–––
11
µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
GS
= -20V
gfs
Q
g
S
V
DS
= 15V, I
D
= 8.8A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
–––
–––
–––
–––
–––
–––
4.8
V
DS
= 15V
Q
gs2
Q
gd
nC V
GS
= 4.5V
D
= 8.8A
See Fig. 16
I
Q
godr
Q
sw
Q
oss
R
G
nC
V
DS
= 15V, V
GS
= 0V
Ω
Gate Resistance
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
V
DD
= 15V, V
GS
= 4.5V
Rise Time
I
D
= 8.8A
Turn-Off Delay Time
ns Clamped
Inductive Load
Fall Time
3.1
770
190
100
C
iss
C
oss
C
rss
Input Capacitance
V
GS
= 0V
pF V
DS
= 15V
ƒ = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
63
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
E
AS
I
AR
8.8
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
MOSFET symbol
I
S
Continuous Source Current
–––
–––
3.1
(Body Diode)
A
showing the
I
SM
Pulsed Source Current
–––
–––
88
integral reverse
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
31
1.0
46
26
V
T =
25°C, I
= 8.8A, V
= 0V
J S
GS
Reverse Recovery Time
Reverse Recovery Charge
ns T
= 25°C, I
= 8.8A, V
DD
= 15V
J F
Q
rr
17
nC di/dt
= 100A/µs
2
UTD Semiconductor Co.,Limited
R
UMW
IRF7807
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
1
100
10
1
V
GS
V
GS
TOP
10V
8.0V
4.5V
3.8V
3.3V
3.0V
2.8V
TOP
10V
8.0V
4.5V
3.8V
3.3V
3.0V
2.8V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0
.1
1
1
1
1
1
1
0
0
0
.1
1
1
1
1
1
1
0
0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
1.5
1.0
0.5
100.0
10.0
1.0
I
= 11A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRF7807
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10000
1000
100
12
10
8
V
= 0V,
f = 1 MHZ
GS
I =
8.8A
D
V
= 24V
C
= C
+ C
, C
SHORTED
DS
VDS= 15V
iss
gs gd
ds
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
Ciss
6
Coss
Crss
4
2
0
10
0
4
8
12
16
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1.0
10.0
100.0
1000.0
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRF7807
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
= 250µA
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100
125 150
T
, Junction Temperature (°C)
T ,
Temperature ( °C )
J
J
Fig 10.
Threshold Voltage Vs. Temperature
Fig 9.
Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
10
0.10
0.05
1
0.1
0.02
0.01
R
1
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
τ
i (sec)
τ
J
τ
J
τ
τ
C
τ
5.770
24.37
19.86
0.002691
0.54585
7.25
τ
1
τ
1
τ
2
τ
2
3
τ
3
Ci=
τ
i
/
Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRF7807
300
250
200
150
100
50
15V
I
D
1.2A
1.5A
TOP
BOTTOM 8.8A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
GS
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
p
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
L
D
I
AS
V
DS
Fig 12b.
Unclamped Inductive Waveforms
+
–
V
DD
D.U.T
Current Regulator
V
GS
Same Type as D.U.
T
.
Pulse Width < 1µs
Duty Factor < 0.1%
50K
Ω
.2
µ
F
12V
Fig 14a.
Switching Time Test Circuit
V
DS
.3
µ
F
+
V
DS
D.U.
T
.
–
90%
V
GS
3mA
10%
V
GS
I
I
D
G
Current Sampling Resistors
t
d(on)
t
d(off)
t
r
t
f
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms
6
UTD Semiconductor Co.,Limited
R
UMW
IRF7807
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Min Max
Symbol
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
IRF7807
Marking
Ordering information
Package
SOP-8
Deliverymode
Baseqty
3000
Order code
Tape and
reel
UMW IRF7807TR
8
UTD Semiconductor Co.,Limited
