UMW-Youtai-Semiconductor-Co—Ltd–IRFZ44NS

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

D

ption  

The IRFZ44NS/IRFZ44N uses advanced trench technology  

and design to provide excellent R

DS(ON)

with low gate cha rg e.  

It ca n be

u

sed in a wide variety of applications.  

G

S

N-Channel MOSFET  

Product Summary  

60V  

V

DS  

I

D

(at V

GS

=-10V)  

50A  

=10V)  

< 12m

Ω

 

< 16m

Ω  

R

DS(ON)

(at V

GS  

G

D

TO-

3

6

2  

=4.5V)  

R

DS(ON)

(at V

GS  

S

D

S

Absolute Maximum Ratings(TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

V

DS  

Value  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

60  

±20  

V

GS  

V

TC=25

℃  

50  

A

Drain Current-Continuous

Note3  

I

D  

TC=100

℃  

33  

A

Drain Current-Pulsed

Note1  

I

DM  

E

AS  

P

D  

200  

A

Avalanche Energy

Note4  

64  

mJ  

W

℃

Maximum Power Dissipation  

Storage

T

emperature Range  

Operating Junction

T

emperature Range  

TC=25

℃  

105  

T

STG  

T

J  

-55 to +150  

-55 to +150  

℃

Thermal Resistance  

Parameter  

Symbol  

Min.  

Typ.  

Max  

Unit  

Thermal Resistance,Junction-to-Case  

–

–

1.4  

℃

/W  

R

θ

JC  

1

友台半导体有限公司  

G

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

Electrical Characteristics(TJ=25

℃

unless otherwise noted)  

OFF CHARACTERISTICS  

Symbol  

BV

DSS  

I

DSS  

Conditions  

Min.  

Typ.  

Max.  

–

Unit  

V

arameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage  

V

GS

=0V,I

DS

=250uA  

V

DS

=60V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

60  

–

–

–

–

1.0  

uA  

nA  

I

GSS  

–

±100  

ON CHARACTERISTICS  

Symbol  

Conditions  

Min.  

Typ.  

1.6  

12  

Max.  

2.5  

17  

Unit  

V

Parameter  

Gate Threshold Voltage  

VGS(TH)  

V

DS

=V

GS

,I

DS

=250uA  

V

GS

=10V,I

DS

=30A  

V

GS

=4.5V,I

DS

=20A  

1.0  

–

–

m

Ω  

m

Ω  

Drain-Source On-State Resistance  

RDS(ON)  

16  

21  

DYNAMIC CHARACTERISTICS  

Symbol  

C

iSS  

Conditions  

Min.  

Typ.  

2928  

141  

Max.  

Unit  

Parameter  

Input Capacitance  

–

–

–

–

–

–

VDS =25V, VGS = 0V,  

f=1MHz  

Output Capacitance  

C

OSS  

C

rss  

pF  

Reverse Transfer Capacitance  

120  

SWITCHING CHARACTERISTICS  

Symbol  

T

d(on)  

t

r  

Conditions  

Min.  

Typ.  

7.5  

6.0  

28.4  

5.5  

50  

Max.  

Unit  

Parameter  

Turn-On Delay Time  

Rise Time  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

V

R

GEN

=1.8Ω  

ns  

Turn-Off Delay Time  

Fall Time  

T

d(off)  

t

f  

I

D

=25A  

Total Gate Charge at 10V  

Gate to Source Gate Charge  

Gate to Drain“Miller”Charge  

Q

g  

V

DS

=30V,I

DS

=25A,  

V

GS

=10V  

Q

gs  

6

nC  

Q

gd  

15  

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  

Symbol  

V

SD  

Conditions  

V

GS

=0V,I

DS

=30A  

TJ=25

℃

,IF=25A  

di/dt=100A/us  

Min.  

Typ.  

–

Max.  

Unit  

V

Parameter  

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

–

–

–

1.2  

t

rr  

29  

42  

–

–

nS  

nC  

Reverse Recovery Charge  

Q

rr  

Notes:  

1: Repetitive rating, pulse width limited by maximum junction temperature.  

2: Surface mounted on FR4 Board, t≤10sec.  

3: Pulse width ≤ 300μs, duty cycle ≤ 2%.  

4: EAS condition: L=0.5mH,VDD=10V,VG=10V,V

GATE

=20V,Start T

J

=25

℃

.  

2

友台半导体有限公司  

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

ACTERISTICS

(25 °C unless noted)  

100  

80  

60  

40  

20  

0

200  

V

= 10 thru 5 V  

GS  

160  

120  

80  

40  

0

4 V  

T

= 125 °C  

C

25 °C  

2

2 V, 3 V  

8

– 55 °C  

4

0

1

3

5

0

2

4

6

10  

V

GS  

– Gate-to-Source Voltage (V)  

V

DS  

– Drain-to-Source Voltage (V)  

Output Characteristics  

Transfer Characteristics  

120  

100  

80  

60  

40  

20  

0

0.015  

0.012  

0.009  

0.006  

0.003  

0.000  

T

= – 55 °C  

25 °C  

C

V

GS  

= 4.5 V  

V

GS  

= 10 V  

125 °C  

0

20  

40  

60  

80  

100  

0

10  

20  

30  

40  

50  

I

– Drain Current (A)  

I

D

– Drain Current (A)  

D

Transconductance  

On-Resistance vs. Drain Current  

10  

8

4000  

3500  

3000  

2500  

2000  

1500  

1000  

500  

V

= 30 V  

= 50 A  

DS  

I

D

C

iss  

6

4

2

C

oss  

C

rss  

0

0

0

10  

20  

30  

40  

50  

0

10  

20  

30  

40  

50  

60  

V

DS  

– Drain-to-Source Voltage (V)  

Q

– Total Gate Charge (nC)  

g

Capacitance  

Gate Charge  

3

友台半导体有限公司  

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

TYPICAL CHARACTERISTICS

(25 °C unless noted)  

100  

10  

1

2.5  

1.5  

1.0  

0.5  

0.0  

T

= 150 °C  

J

T

= 25 °C  

J

– 50

 

– 25  

0

25  

50  

75 100

 

125 150 175  

0.3  

V

0.6  

0.9  

1.2  

1.5  

0

T

– Junction Temperature (°C)  

– Source-to-Drain Voltage (V)  

J

SD  

On-Resistance vs. Junction Temperature  

Source-Drain Diode Forward Voltage  

1000  

100  

60  

50  

40  

30  

20  

10  

0

Limited by  

R

DS(on)

*  

10 µs  

100 µs  

10  

1

1 ms  

10 ms  

100 ms  

DC  

T

= 25 °C  

C

0.1  

Single Pulse  

0.01  

0.1  

1

10  

100  

0

25  

50  

75  

100  

125  

150  

175  

V

DS  

– Drain-to-Source Voltage (V)  

T

– Ambient Temperature

(

°

C)  

A

* V

 

> minimum

 

V  

GS  

at which R  

is specified  

DS(on)  

GS  

Maximum Drain Current vs. Ambient Temperature  

Safe Operating Area  

2

1

Duty Cycle = 0.5  

0.2  

0.1  

0.1  

0.05  

0.02  

Single Pulse  

0.01  

–

4  

10  

–

3  

10  

–

2  

10  

–

1  

10  

1

10  

100  

Square Wave Pulse Duration (s)  

Normalized Thermal Transient Impedance, Junction-to-Case  

4

友台半导体有限公司  

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

5

友台半导体有限公司  

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

PACKAGES DIMENSION : TO-263  

Millimeters  

Inches  

Symbol  

A

Min  

Nom  

Max  

4.57  

1.27  

2.69  

Min  

Nom  

0.180  

0.050  

0.106  

0.004  

0.032  

0.050  

0.015  

0.343  

0.400  

0.398  

0.100BSC  

0.594  

0.050  

0.091  

0.061  

Max  

0.185  

0.052  

0.110  

0.008  

0.035  

0.054  

0.019  

0.3

54  

0.404  

0.402  

0.173  

0.048  

0.102  

0.000  

0.030  

0.047  

0.013  

0.339  

0.394  

0.394  

4.40  

1.22  

2.59  

0.00  

4.57  

1.27  

2.69  

0.10  

0.813  

1.270  

0.381  

8.70  

10.16  

10.10  

A1  

A2  

A3  

b

b1  

0.10  

0.77  

1.20  

0.34  

0.813  

1.270  

0.381  

8.

99  

10.16  

10.10  

c

D1  

E

8.60  

10.00  

10.00  

E2  

e

H

H2  

2.54BSC  

15.10  

1.27  

2.30  

1.55  

14.70  

1.17  

2.00  

1.45  

15.50  

1.40  

2.60  

1.70  

0.579  

0.046  

0.079  

0.057  

0.610  

0.055  

0.102  

0.067  

L

L1  

0.25BSC  

0.010BSC  

L4  

θ

θ

1  

0°  

5°  

5°  

7°  

8°  

9°  

0°  

5°  

8°  

9°  

5°  

7°  

θ

2  

1°  

0.05  

3°  

0.10  

5°  

0.20  

1°  

0.002  

5°  

0.008  

3°  

0.004  

DEP  

6

友台半导体有限公司  

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

PACKAGES DIMENSION : TO-220  

mm.  

TYP  

inch  

DIM.  

MIN.  

MAX.  

4.60  

0.88  

1.70  

0.70  

15.75  

10.40  

2.7  

MIN.  

0.173  

0.024  

0.045  

0.019  

0.600  

0.393  

0.094  

0.194  

0.048  

0.244  

0.094  

0.511  

0.137  

TYP.  

MAX.  

0.181  

0.034  

0.067  

0.027  

0.620  

0.409  

0.106  

0.203  

0.051  

0.260  

0.107  

0.551  

0.154  

A

b

4.40  

0.61  

1.15  

0.49  

15.25  

10.0  

2.4  

b1  

c

D

E

e

e1  

F

4.95  

1.23  

6.2  

5.15  

1.32  

6.6  

H1  

J1  

L

2.40  

13.0  

3.5  

2.72  

14.0  

3.93  

L1  

L20  

L30  

φ

P  

Q

16.4  

28.9  

0.645  

1.138  

3.75  

2.65  

3.85  

2.95  

0.147  

0.104  

0.151  

0.116  

7

司

友台半导体有限公  

R

UMW  

IRFZ44N  

60V N-Channel

 

MOSFET  

Ordering information  

UMW IRFZ44NS  

UMW IRFZ44N  

Package  

TO-263  

TO-220  

Deliverymode  

Tape and

 

reel  

Tube and box  

Baseqty  

800  

1000  

8

友台半导体有限公司