UMW-Youtai-Semiconductor-Co—Ltd–IRLML0100TR-UMW
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R
UMW
IRLML0100
N-Channel MOSFET
Application(s)
SOT
–
23
•
Load/ System Switch
Features
•
•
•
•
•
V
DS (V)
= 100V
m
m
220
235
(
V
GS
=10V)
(
V
GS
=4.5V)
R
DS(ON)
R
DS(ON)
1. GATE
2. SOURCE
3. DRAIN
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
•
Benefits
Multi-vendor compatibility
•
•
G
S
1
2
Easier manufacturing
Environmentally friendly
Increased reliability
3
D
•
•
Absolute Maximum Ratings
Symbol
Parameter
Max.
100
Units
V
Drain-Source Voltage
V
DS
1.6
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1.3
7.0
A
1.3
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
W
0.8
0.01
W/°C
V
± 16
Gate-to-Source Voltage
V
GS
-55 to
+ 150
Junction and Storage Temperature Range
°C
T
J,
T
STG
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Ambient
R
θ
JA
R
θ
JA
100
99
°C/W
Junction-to-Ambient (t<10s)
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
1
UTD Semiconductor Co.,Limited
R
UMW
IRLML0100
N-Channel MOSFET
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
Drain-to-Source Breakdown Voltage
100
V
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
0.10
190
178
V/°C Reference
to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 1.3A
235
220
2.5
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
m
V
GS
= 10V, I
D
= 1.6A
V
DS
= V
GS
, I
D
= 25µA
V
GS(th)
I
DSS
Gate Threshold Voltage
1.0
V
20
V
DS
=100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
Drain-to-Source Leakage Current
µA
nA
250
100
-100
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
V
GS
= -16V
R
G
1.3
Ω
gfs
Q
g
5.7
S
V
DS
= 50V, I
D
= 1.6A
I
D
= 1.6A
2.5
0.5
1.2
2.2
2.1
9.0
3.6
290
27
nC
ns
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
V
DS
=50V
V
GS
= 4.5V
V
DD
=50V
Rise Time
I
D
= 1.0A
t
d(off)
t
f
Turn-Off Delay Time
R
G
= 6.8
Ω
V
GS
= 4.5V
V
GS
= 0V
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
pF
Output Capacitance
V
DS
= 25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
13
Source – Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
1.1
(Body Diode)
showing the
A
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
7.0
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.3
30
V
T
J
= 25°C, I
S
= 1.1A, V
GS
= 0V
20
13
ns T
J
= 25°C, V
R
= 50V, I
F
=1.1A
nC di/dt
= 100A/µs
Q
rr
20
2
UTD Semiconductor Co.,Limited
R
UMW
IRLML0100
N-Channel MOSFET
100
10
100
10
1
VGS
VGS
≤
60µs PULSE
WIDTH
Tj = 25°C
≤
60µs PULSE
WIDTH
Tj = 150°C
TOP
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
TOP
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
BOTTOM
BOTTOM
1
0.1
0.01
2.25V
2.25V
1
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
10
2.5
2.0
1.5
1.0
0.5
I
= 1.6A
D
V
= 10V
GS
T
= 150°C
J
1
0.1
T =
25°C
J
V
= 50V
DS
60µs PULSE WIDTH
≤
0.01
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
T
0
20 40 60 80
10
0
1
20 140 160
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRLML0100
N-Channel MOSFET
10000
1000
100
10
16
12
8
V
= 0V,
f = 1 MHZ
GS
I =
1.6A
D
C
= C
+ C
, C
SHORTED
iss
gs
gd ds
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
C
iss
C
oss
C
rss
4
0
1
0
1
2
3
4
5
6
7
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 150°C
J
1
1
1msec
0.1
0.01
0.1
0.01
T
= 25°C
T
= 25°C
A
J
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1
10
100
0.4
0.6
0.8
1.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRLML0100
N-Channel MOSFET
2.0
1.5
1.0
0.5
0.0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
, Ambient Temperature (°C)
A
10%
Fig 9.
Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b.
Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRLML0100
N-Channel MOSFET
600
550
500
450
400
350
300
250
200
150
270
250
230
210
190
170
I
= 1.6A
D
Vgs = 4.5V
T
= 125°C
= 25°C
J
Vgs = 10V
T
8
J
2
4
6
10
0
2
4
6
8
I
, Drain Current (A)
D
V
Gate -to -Source Voltage
(V)
GS,
Fig 13.
Typical On-Resistance Vs. Drain
Fig 12.
Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
6
UTD Semiconductor Co.,Limited
R
UMW
IRLML0100
N-Channel MOSFET
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
I
I
= 25uA
D
D
= 250uA
1E-005 0.0001
0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75
100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 16.
Typical Power Vs. Time
Fig 15.
Typical Threshold Voltage Vs.
Junction Temperature
7
UTD Semiconductor Co.,Limited
R
UMW
IRLML0100
N-Channel MOSFET
SOT-23 PACKAGE
OUTLINE DIMENSIONS
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
reel
SOT-23
UMW IRLML0100TR
3000
Tape and
8
UTD Semiconductor Co.,Limited
