UMW-Youtai-Semiconductor-Co—Ltd–IRLML6344TR-UMW
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R
UMW
IRLML6344
SOT
–
23
2
9
m
3
7
m
(
V
GS
R
DS(ON)
R
DS(ON)
=
=
4.5V)
2.5V)
GS
(V
Application(s)
Load/ System Switch
1. GATE
Benefits
2. SOURCE
3. DRAIN
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability
G
S
1
2
3
D
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Max.
30
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
5.0
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
4.0
25
A
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
1.3
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
0.8
0.01
± 12
W/°C
V
V
GS
Gate-to-Source Voltage
T
J,
T
STG
-55 to
+ 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θ
Junction-to-Ambient
100
JA
°C/W
R
θ
99
JA
Junction-to-Ambient (t<10s)
8
1
UTD Semiconductor Co.,Limited
R
UMW
IRLML6344
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Conditions
Symbol
Parameter
Min. Typ. Max.
Units
V
GS
= 0V, I
D
= 250
μ
A
Drain-to-Source Breakdown Voltage
30
V
Reference to 25°C, I
D
= 1mA
0.02
22
V/°C
V
GS
= 4.5V, I
D
= 5.0A
29
37
R
DS(on)
m
Ω
Static Drain-to-Source On-Resistance
V
GS
= 2.5V, I
D
= 4.0A
27
V
DS
= V
GS
, I
D
= 10
μ
A
V
GS(th)
I
DSS
Gate Threshold Voltage
0.5
0.8
1.1
V
V
DS
=24V, V
GS
= 0V
1.0
Drain-to-Source Leakage Current
μ
A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
100
-100
V
GS
= 12V
GS
= -12V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
nA
V
R
G
1.7
Ω
V
DS
= 10V, I
D
= 5.0A
D
= 5.0A
gfs
Q
g
19
S
I
6.8
0.3
2.4
4.2
5.6
22
nC
ns
V
DS
=15V
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
V
GS
= 4.5V
V
DD
=15V
I
D
= 1.0A
Rise Time
Ω
R
G
= 6.8
t
d(off)
t
f
Turn-Off Delay Time
V
GS
= 4.5V
Fall Time
9.1
650
65
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
pF
V
DS
= 25V
Output Capacitance
ƒ = 1.0MHz
Reverse Transfer Capacitance
46
Source – Drain Ratings and Characteristics
Conditions
Symbol
Parameter
Min. Typ. Max.
Units
MOSFET symbol
I
S
Continuous Source Current
D
1.3
showing the
(Body Diode)
A
G
integral reverse
I
SM
Pulsed Source Current
(Body Diode)
25
S
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25°C, V
R
= 15V, I
F
=1.3A
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.2
15
V
10
ns
Q
rr
3.8
5.7
nC di/dt
= 100A/
μ
s
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
8
2
UTD Semiconductor Co.,Limited
R
UMW
IRLML6344
100
100
10
1
VGS
10V
VGS
10V
TOP
TOP
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
10
1
BOTTOM
BOTTOM
1.4V
1.4V
1
≤
60
μ
s PULSE WIDTH
≤
60
μ
s PULSE
WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
10
2.0
1.5
1.0
0.5
I
= 5.0A
D
V
= 4.5V
GS
T
= 150°C
J
1
T
= 25°C
V
J
= 15V
DS
≤
60
μ
s PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
8
3
UTD Semiconductor Co.,Limited
R
UMW
IRLML6344
14.0
12.0
10.0
8.0
10000
V
= 0V,
= C
f = 1 MHZ
GS
I =
5.0A
D
V
= 24V
= 15V
= 6.0V
C
C
C
+ C
, C
SHORTED
ds
DS
iss
gs
gd
= C
V
rss
oss
gd
= C
+ C
DS
V
ds
gd
DS
1000
100
10
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
0.0
4.0
Q
8.0
12.0
16.0
20.0
1
10
, Drain-to-Source Voltage (V)
100
, Total
Gate Charge (nC)
V
G
DS
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1msec
T
= 150°C
J
100
μ
sec
1
T
= 25°C
0.1
0.01
J
T
= 25°C
A
Tj = 150°C
Single Pulse
10msec
10
V
= 0V
1.0
GS
0.1
0.1
1
100
0.4
0.5
V
0.6
0.7
0.8
0.9
1.1
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
8
4
UTD Semiconductor Co.,Limited
R
UMW
IRLML6344
5.0
4.0
3.0
2.0
1.0
0.0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
Fig 9.
Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b.
Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
0.01
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
8
5
UTD Semiconductor Co.,Limited
R
UMW
IRLML6344
60
50
40
30
20
10
80
60
40
20
0
I
= 5.0A
D
Vgs = 2.5V
T
= 125°C
J
Vgs = 4.5V
T
= 25°C
J
0
1
2
3
4
5
6
7
8
9
10 11 12
0
10
20
, Drain Current (A)
30
40
I
D
V
Gate -to -Source Voltage
(V)
GS,
Fig 13.
Typical On-Resistance Vs. Drain
Fig 12.
Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
8
6
UTD Semiconductor Co.,Limited
R
UMW
IRLML6344
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
I
I
= 10
μ
A
D
D
= 250
μ
A
1E-005 0.0001
0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75
100 125 150
Time (sec)
T ,
Temperature ( °C )
J
Fig 16.
Typical Power Vs. Time
Fig 15.
Typical Threshold Voltage Vs.
Junction Temperature
8
7
UTD Semiconductor Co.,Limited
R
UMW
IRLML6344
SOT-23 PACKAGE
OUTLINE DIMENSIONS
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
Ordering information
Package
Deliverymode
Order code
Baseqty
UMW
IRLML6344TR
Tape and
reel
SOT-23
3000
8
8
UTD Semiconductor Co.,Limited
