UMW-Youtai-Semiconductor-Co—Ltd–IRLML9301TR-UMW
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R
UMW
IRLML9301
P
−
CHANNEL MOSFET
FEATURES
SOT
–
23
V
DS (V)
= -30V
R
DS(ON)
R
DS(ON)
64m (V
G
S
= -10V)
103m
(V
GS
= -4.5V)
Application(s)
1. GATE
2. SOURCE
3. DRAIN
•
System/Load Switch
Benefits
Lower switching losses
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
G
S
1
2
3
D
Symbol
Parameter
Drain-Source Voltage
Max.
-30
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
-3.6
-2.9
A
-15
Pulsed Drain Current
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
1.3
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
0.8
0.01
W/°C
V
V
GS
± 20
Gate-to-Source Voltage
T
J,
T
STG
-55 to
+ 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θ
JA
100
Junction-to-Ambient
°C/W
R
θ
JA
Junction-to-Ambient (t<10s)
99
Notes:
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
≤
400
μ
s; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
1
UTD Semiconductor Co.,Limited
R
UMW
IRLML9301
P
−
CHANNEL MOSFET
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= -250
μ
A
-30
V
Δ
Δ
V
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
0.02
51
V/°C
Reference to 25°C, I
D
= -1mA
GS
= -10V, I
D
= -3.6A
64
103
-2.4
1
V
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
m
82
V
GS
= -4.5V, I
D
= -2.9A
V
DS
= V
GS
, I
D
= -10
μ
A
V
DS
=-24V, V
GS
= 0V
V
GS(th)
I
DSS
-1.3
V
Drain-to-Source Leakage Current
μ
A
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
150
-100
100
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
V
GS
= -20V
V
GS
= 20V
nA
R
G
Ω
12
gfs
Q
g
5.0
S
V
DS
= -10V, I
D
=-3.6A
I
D
= -3.6A
4.8
1.2
2.5
9.6
19
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
V
DS
=-15V
nC
ns
V
GS
= -4.5V
V
DD
=-15V
Rise Time
I
D
= -1A
t
d(off)
t
f
Turn-Off Delay Time
16
R
G
= 6.8
Ω
V
GS
= -4.5V
Fall Time
15
C
iss
C
oss
C
rss
Input Capacitance
388
93
V
V
GS
= 0V
Output Capacitance
pF
DS
= -25V
Reverse Transfer Capacitance
65
ƒ = 1.0KHz
Source – Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max.
Units
Conditions
MOSFET symbol
I
S
D
S
-1.3
A
(Body Diode)
Pulsed Source Current
showing the
G
I
SM
integral reverse
-15
(Body Diode)
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
-1.2
21
V
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, V
R
= -24V, I
F
=-1.3A
di/dt = 100A/
μ
s
Reverse Recovery Time
14
ns
nC
Q
rr
Reverse Recovery Charge
7.2
11
2
UTD Semiconductor Co.,Limited
R
UMW
IRLML9301
P
−
CHANNEL MOSFET
100
10
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
BOTTOM
BOTTOM
1
0.1
0.01
-2.5V
-2.5V
≤
60
μ
s PULSE
WIDTH Tj = 25°C
≤
60
μ
s PULSE
WIDTH Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
-V ,
Drain-to-Source Voltage (V)
DS
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
1.6
1.4
1.1
0.8
0.6
100
I
= -3.6A
D
V
= -15V
DS
V
= -10V
GS
≤
60
μ
s PULSE WIDTH
10
1
T
= 150°C
J
T
= 25°C
J
0.1
-60 -40 -20
0
20 40 60 80
100 12
0
1
40 160
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
J
, Junction Temperature (°C)
-V ,
Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
UTD Semiconductor Co.,Limited
R
UMW
IRLML9301
P
−
CHANNEL MOSFET
10000
1000
100
14
12
10
8
V
= 0V,
= C
f = 1 KHZ
GS
I
= -3.6A
V
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= -24V
= -15V
DS
= C
+ C
ds
gd
V
DS
VDS= -6V
C
iss
6
C
C
oss
rss
4
2
10
0
1
10
-V ,
Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
12
Q
, Total
Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
μ
sec
1msec
T
= 150°C
1
J
T
= 25°C
J
10msec
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0
1
10
100
0.3
0.5
0.7
0.9
1.1
-V ,
Drain-to-Source Voltage (V)
-V ,
Source-to-Drain Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
UTD Semiconductor Co.,Limited
R
UMW
IRLML9301
P
−
CHANNEL MOSFET
R
D
V
DS
4.2
3.6
3
V
GS
D.U.T.
R
G
–
V
DD
+
2.4
1.8
1.2
0.6
0
-V
GS
Puls
e
W
idth
≤ 1
µs
Duty Facto
r
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
25
50
75
100
125
150
10%
T
, Ambient Temperature (°C)
A
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
UTD Semiconductor Co.,Limited
R
UMW
IRLML9301
P
−
CHANNEL MOSFET
500
400
300
200
100
0
180
140
100
60
I
= -3.6A
D
T
= 125°C
J
Vgs = -4.5V
Vgs = -10V
T
= 25°C
J
20
0
5
10
15
20
25
30
35
2
4
6
8
10 12 14 16 18 20
-I ,
Drain Current (A)
D
-V
Gate -to -Source Voltage
(V)
GS,
Fig 13.
Typical On-Resistance Vs. Drain
Fig 12.
Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a.
Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
6
UTD Semiconductor Co.,Limited
R
UMW
IRLML9301
P
−
CHANNEL MOSFET
2.5
2.0
1.5
1.0
0.5
100
80
60
40
20
0
I
= -10uA
D
ID = -25uA
= -250uA
I
D
1E-005 0.0001
0.001 0.01
0.1
1
10
-75 -50 -25
0
25 50 75
100 125 150
Time (sec)
T ,
Temperature ( °C )
J
Fig 16.
Typical Power Vs. Time
Fig 15.
Typical Threshold Voltage Vs.
Junction Temperature
7
UTD Semiconductor Co.,Limited
R
UMW
IRLML9301
P
−
CHANNEL MOSFET
SOT-23 PACKAGE
OUTLINE DIMENSIONS
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
reel
SOT-23
UMW IRLML9301TR
3000
Tape and
8
UTD Semiconductor Co.,Limited
