UMW-Youtai-Semiconductor-Co—Ltd–SVT078R0ND
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R
UMW
SVT078R0ND
68V N-Channel Power Mosfet
UMW
S
V
T0
78R
0ND
General Description
These N-channel enhancement mode power mosfets used
advanced trench technolog
y design, provided excellent Rdson
and low gate charge. Which accords with the RoHS standard.
Features
V
DS
= 68V,ID =88A
R
DS(ON)
,6.3m
Ω
(Typ) @ VGS =10V
Low On-Resistance
Low gate charge
Fast switching
Low reverse transfer capacitances
100% single pulse avalanche energy test
100%
Δ
VDS test
Application
Power switching applications
DC-DC converters
UPS power supply
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SVT078
R
0ND
SVT078
R
0ND
TO-252
330mm
12mm
2500
Absolute Maximum Ratings(TA=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
Value
68
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±20
TC=25
℃
88
A
Drain Current-Continuous
Note3
I
D
TC=100
℃
61
A
Drain Current-Pulsed
Note1
I
DM
E
AS
P
D
292
A
Avalanche Energy
Note4
550
mJ
W
℃
Maximum Power Dissipation
Storage
T
emperature Range
Operating Junction
T
emperature Range
TC=25
℃
167
T
STG
T
J
-55 to +150
-55 to +150
℃
Thermal Resistance
Parameter
Symbol
Min.
Typ.
Max
Unit
℃
/W
℃
/W
Thermal Resistance,Junction to Case-sink
Thermal Resistance,Junction to Ambient
R
θJC
R
θJA
–
–
–
–
0.9
75
1
友台半导体有限公司
R
UMW
SVT078R0ND
Electrical Characteristics(TJ=25
℃
unless otherwise noted)
OFF CHARACTERISTICS
Symbol
BV
DSS
I
DSS
Conditions
V
GS
=0V,I
DS
=250uA
V
DS
=68V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
Min.
Typ.
Max.
–
Unit
V
Parameter
Drain-Source Breakdown Voltage
Gate-Body Leakage
68
–
–
–
–
1.0
uA
nA
I
GSS
–
±100
ON CHARACTERISTICS
Symbol
VGS(TH)
RDS(ON)
Conditions
Min.
2.5
–
Typ.
3.0
Max.
3.5
Unit
V
Parameter
Gate Threshold Voltage
V
DS
=VGS,I
DS
=250uA
V
GS
=10V,I
DS
=30A
Drain-Source On-State Resistance
6.3
7.5
m
Ω
DYNAMIC CHARACTERISTICS
Symbol
C
iSS
Conditions
Min.
Typ.
4100
323
Max.
Unit
Parameter
Input Capacitance
–
–
–
–
–
–
V
DS
=30V,V
GS
=0V,
f=1MHz
Output Capacitance
C
OSS
C
rss
pF
Reverse Transfer Capacitance
242
SWITCHING CHARACTERISTICS
Symbol
T
d(on)
t
r
Conditions
Min.
Typ.
25.5
92.9
74.3
70.4
86
Max.
Unit
Parameter
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
DS
=30V,I
D
=30A,
ns
V
GS
=10V, R
GEN
=6Ω
Turn-Off Delay Time
Fall Time
T
d(off)
t
f
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain“Miller”Charge
Q
g
V
DS
=30V,I
DS
=20A,
V
GS
=10V
Q
gs
24.3
26.4
nC
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Symbol
V
SD
Conditions
Min.
Typ.
–
Max.
Unit
V
Parameter
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
=0V,I
DS
=30A
–
–
–
1.3
t
rr
27.9
33.6
–
–
nS
nC
I
F
=50A,dI/dt=100A/us
Reverse Recovery Charge
Q
rr
Notes:
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2
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