uPI-Semiconductor-QM0005D
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QM0005D
P-Channel 100V Fast Switching MOSFET
General Description
Product Summary
The QM0005D is the highest performance trench
P-Channel MOSFET with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
RDSON
(VGS=-10V)
ID
BVDSS
-100V
(T
C
=25
℃
)
150mΩ
-13.4A
Applications
The QM0005D meet the RoHS and Green Product
requirement with full function reliability approved.
ò
High Frequency Point-
Synchronous
Buck Converter
ò
Networking DC-DC Po
m
ò
Power Tool Application
Features
ò
Advanced high cell density Trench technology
ò
Super Low Gate Charge
TO252 Pin C
guration
D
ò
Excellent Cdv/dt effect decline
ò
Green Device Available
S
Absolute Maximum Ratings
D
G
Symbol
V
DS
Parameter
Rating
-100
±
20
-13.4
-8.5
Units
V
Drain-S
Voltage
V
GS
G
e-So
ce Vo
tage
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Dra
n Current, V
GS
@ -10V
1
Cont
Drain Current, V
GS
@ -10V
1
Conti
ous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
A
-2.8
A
-2.3
A
-34
A
EAS
Single Pulse Avalanche Energy
3
36.4
mJ
A
I
AS
Avalanche Current
27
P
D
@T
C
=25
℃
P
D
@
T
S
Total Power Dissipation
4
Total Power Dissipation
4
45
W
W
℃
℃
2
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
62
Unit
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
℃
/W
℃
/W
R
θJC
—
2.8
All information provided in this document is subjected to important notice
Confidential
1
Rev A.03 D091117P
QM0005D
P-Channel 100V Fast Switching MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-100
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-6A
-0.05
120
130
-1.6
4
—
V
℃
—
150
165
–
.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=-4.5V , I
D
=-3A
—
V
GS(th)
Gate Threshold Voltage
-1.2
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-80V , V
GS
=0V , T
J
=25
℃
V
DS
=-80V , V
GS
=0V , T
J
=55
℃
—
-1
I
DSS
Drain-Source Leakage Current
uA
-5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-6A
—
12.6
10
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
20
Ω
Q
g
Total Gate Charge (-10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
30
42
V
DS
=-80V , V
GS
=-10V , I
D
=-6A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
6.4
4.5
6.8
9.4
62
9
—
6.3
13.6
17
—
V
DD
=-50V ,
GS
=-10V , R
G
=3.3
Ω
—
I
D
=-6
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
124
19
—
9.6
2125
104
60
C
iss
C
oss
C
rss
Input Capacitance
—
2980
146
84
V
S
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Guaranteed Avalanche Characteristics
Symbol
aram
er
Conditions
Min.
Typ.
Max.
Unit
EAS
Single
anche Energy
5
18
—
—
mJ
V
DD
=25V , L=0.1mH , I
AS
=19A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-13.4
-34
Unit
A
I
S
I
SM
V
SD
t
rr
ntinuous Source Current
1,6
sed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
I
F
=-6A , di/dt=100A/µs , T
J
=25
℃
—
—
A
—
—
-1.2
—
V
—
22.6
29
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
All information provided in this document is subjected to important notice
Confidential
2
Rev A.03 D091117P
QM0005D
P-Channel 100V Fast Switching MOSFET
Typical Characteristics
Fig.2 On-
tance vs. Gate-Source
Fig.1 Typical Output Characteristics
Fig.3 Forward C
ristics Of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
All information provided in this document is subjected to important notice
Confidential
3
Rev A.03 D091117P
QM0005D
P-Channel 100V Fast Switching MOSFET
Fig.7 Capacitance
Fig.8
Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
0.01
0.001
SINGLE
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
DM
XR
θJC
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
All information provided in this document is subjected to important notice
Confidential
4
Rev A.03 D091117P
QM0005D
P-Channel 100V Fast Switching MOSFET
Top Marking
TO252 Package Outline Drawing
All information provided in this document is subjected to important notice
Confidential
5
Rev A.03 D091117P
QM0005D
P-Channel 100V Fast Switching MOSFET
Important Notice
UBIQ and its subsidiaries reserve the right to make corrections, modifications, enhancements,
improvements, and other changes to its products and services at any time and to discontinue any
product or service without notice. Customers should obtain the latest relevant information before
placing orders and should verify that such information is current and complete.
UBIQ products are sold subject to the terms and conditions of sale supplied at the time of order
acknowledgment. However, no responsibility is assumed by UBIQ or its subsidiaries for its use or
application of any product or circuit; nor for any infringements of patents or other rights of third
parties which may result from its use or application, including but not limited to any consequential
or incidental damages. No UBIQ components are designed, intended o
rized for use in
military, aerospace, automotive applications nor in systems for s
plantation or
life-sustaining. No license is granted by implication or otherwise under an
r patent rights
of UBIQ or its subsidiaries.
UBIQ Semiconductor Corp.
Sales Branch Office
Headquarter
12F-5, No. 408, Ruiguang Rd. Neihu District,
9F.,No.5, Taiyuan 1st St. Zhubei City,
Taipei Taiwan, R.O.C.
Hsinchu Taiwan, R.O.C.
TEL : 886.2.8751.2062 FAX : 886.2.8751.5064
TEL : 886.3.560.1818 FAX : 886.3.560.1919
All information provided in this document is subjected to important notice
Confidential
6
Rev A.03 D091117P
