uPI-Semiconductor-QM2538N3

Part #	uPI-Semiconductor-QM2538N3
Download	uPI-Semiconductor-QM2538N3

QM2538N3

N-Channel 20V Fast Switching MOSFET

General Description

Product Summary

The QM2538N3 is the highest performance trench

N-Channel MOSFET with extreme high cell

density , which provide excellent RDSON and gate

charge for most of the Battery MOSFET Switch.

The QM2538N3 meet the RoHS and Green

Product requirement.

RDSON

(VGS=4.5V)

ID

BVDSS

(T

C

=25

℃

)

20V

6.0mΩ

56A

Applications

ò

Battery MOSFET Switch

Features

DFN 3X3 Pin Configuration

ò

Advanced high cell density Trench technology

ò

Super Low Gate Charge

ò

Green Device Available

ò

Embedded ESD Protection

ò

HBM 2KV / MM200V Verified

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V

DS

V

GS

Drain-Source Voltage

20

±8

V

V

Gate-Sou

r

ce Voltage

I

D

@T

C

=25

℃

I

D

@T

C

=100

℃

I

D

@T

A

=25

℃

I

D

@T

A

=70

℃

I

DM

Continuous Drain Current, V

GS

@ 4.5V

1

Continuous Drain Current, V

GS

@ 4.5V

1

Continuous Drain Current, V

GS

@ 4.5V

1

Continuous Drain Current, V

GS

@ 4.5V

1

Pulsed Drain Current

2

56

A

35

13

A

A

10

A

100

A

EAS

Single Pulse Avalanche Energy

3

45

mJ

A

I

AS

Avalanche Current

30

P

D

@T

C

=25

℃

P

D

@T

A

=25

℃

T

STG

Total Power Dissipation

4

Total Power Dissipation

4

31

W

W

℃

℃

1.6

Storage

T

e

mperature Range

-55 to 150

-55 to 150

T

J

Operating Junction Temperature Range

Thermal Data

Symbol

R

θJA

Parameter

Typ.

—

Max.

75

Unit

℃

/W

℃

/W

Thermal Resistance Junction-Ambient

1

Thermal Resistance Junction-Case

1

R

θJC

—

4

Rev A.03 D031116

1

QM2538N3

N-Channel 20V Fast Switching MOSFET

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)

Symbol

BV

DSS

Parameter

Conditions

V

GS

=0V , I

D

=250uA

Min.

20

Typ.

—

Max.

—

Unit

V

Drain-Source Breakdown Voltage

BVDSS Temperature Coefficient

△

BV

DSS

/△

T

J

Reference to 25

℃

, I

D

=1mA

V

GS

=4.5V , I

D

=3A

V

GS

=4.0V , I

D

=3A

V

GS

=3.9V , I

D

=3A

V

GS

=3.8V , I

D

=3A

V

GS

=3.1V , I

D

=3A

V

GS

=2.5V , I

D

=3A

—

0.01

3.9

4.0

4.0

4.0

4.4

4.7

0.7

-2.7

—

V/

℃

2.3

2.4

2.4

2.4

2.6

2.8

0.5

—

6.0

6.8

6.8

6.8

7.5

8.0

1

R

DS(ON)

Static Drain-Source On-Resistance

2

m

Ω

V

GS(th)

Gate Threshold Voltage

V

V

GS

=V

DS

, I

D

=250uA

△

V

GS(th)

V

GS(th)

Temperature Coefficient

Drain-Source Leakage Current

—

mV/

℃

uA

I

DSS

V

DS

=16V , V

GS

=0V , T

J

=25

℃

—

—

1

V

_{GS
=
±
8V , V
DS
=0V}

I

GSS

gfs

Gate-Source Leakage Current

Forward Transconductance

Gate Resistance

—

—

—

—

—

—

—

—

—

—

—

—

—

—

40

±

10

—

—

—

—

—

—

—

—

—

—

—

—

uA

S

V

DS

=5V , I

D

=3A

R

g

V

DS

=0V , V

GS

=0V , f=1MHz

19.2

41.1

2.9

Ω

Q

g

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

V

DS

=10V , V

GS

=4.5V , I

D

=3A

nC

ns

Q

gs

Q

gd

T

d(on)

T

r

12.2

8.3

V

DD

=15V , V

GS

=4.5V , R

G

=3.3

Ω

34.6

406.7

189.8

2571

334

I

D

=3A

T

d(off)

T

f

Turn-Off Delay Time

Fall Time

C

iss

C

oss

C

rss

Input Capacitance

V

DS

=10V , V

GS

=0V , f=1MHz

pF

Output Capacitance

Reverse Transfer Capacitance

318

Diode Characteristics

Symbol

Parameter

Conditions

Min.

—

Typ.

—

Max.

56

Unit

A

I

S

Continuous Source Current

1,5

Pulsed Source Current

2,5

Diode Forward Voltage

2

V

G

=V

D

=0V , Force Current

I

SM

V

SD

—

—

100

1.2

A

V

GS

=0V , I

S

=1A , T

J

=25

℃

—

—

V

Note :

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.

2.Pluse width limited by maximum junction temperature.

3.The EAS data shows Max. rating . The test condition is V

DD

=25V,V

GS

=8V,L=0.1mH

4.The power dissipation is limited by 150

℃

junction temperature

5.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.

2

QM2538N3

N-Channel 20V Fast Switching MOSFET

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs. Gate-Source

Fig.3 Forward Characteristics of reverse

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized V

GS(th)

vs. T

J

Fig.6 Normalized R

DSON

vs. T

J

3

QM2538N3

N-Channel 20V Fast Switching MOSFET

Fig.7 Capacitance

Fig.8 Safe Operating Area

1

DUT

Y

=

0.5

0.3

0.1

0.1

0.05

0.02

P

DM

T

ON

T

0.01

D = T

ON

/T

S

I

NGLE PULSE

T

J

peak = T

C

+ P

DM

x R

θJC

0.01

0.00001

0.0001

0.001

0.01

0.1

1

t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

V

DS

90%

10%

V

GS

T

d(on)

T

r

T

on

T

d(off)

T

f

T

off

Fig.10 Switching Time Waveform

Fig.11 Gate Charge Waveform

4

QM2538N3

N-Channel 20V Fast Switching MOSFET

Fig.12 Top Marking

5

QM2538N3

N-Channel 20V Fast Switching MOSFET

Fig.13 DFN 3X3 Package Outline Drawing

6