UTC-Unisonic-Tech-12N80L-TF2-T
| Part # | UTC-Unisonic-Tech-12N80L-TF2-T |
Download  | UTC-Unisonic-Tech-12N80L-TF2-T |
UNISONIC TECHNOLOGIES CO., LTD
12N80
Power MOSFET
12A, 800V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N80
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC
12N80
is universally applied in high efficiency switch
mode power supply.
FEATURES
* R
DS(on)
< 1.0
Ω
@ V
GS
=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
TO-247
TO-3P
G
G
G
G
D
D
D
D
Tube
Tube
Tube
Tube
12N80L-T47-T
12N80L-T3P-T
12N80L-TC3-T
12N80L-TF2-T
12N80G-T47-T
12N80G-T3P-T
12N80G-TC3-T
12N80G-TF2-T
TO-230
TO-220F2
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
MARKING
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-594.G
12N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (T
C
=25°C)
Pulsed (Note 2)
12
A
Drain Current
I
DM
48
A
Avalanche Current (Note 2)
I
AR
12
A
TO-247
TO-3P
360
W
W
W
W
°C
°C
390
Power Dissipation
P
D
TO-230
TO-220F2
167
51
Junction Temperature
Storage Temperature
T
J
+150
-55~+150
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL DATA
PARAMETER
TO-247
SYMBOL
RATINGS
50
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
TO-3P
θ
JA
40
TO-220F2/TO-230
TO-247
62.5
0.35
0.32
0.75
2.43
TO-3P
θ
JC
TO-230
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R502-594.G
12N80
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
800
V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250µA, Referenced to 25°C
1.0
V/°C
V
DS
=800V, V
GS
=0V
V
DS
=640V, T
C
=125°C
GS
=+30V, V
DS
=0V
10
Drain-Source Leakage Current
Gate- Source Leakage Current
I
DSS
I
GSS
µA
100
Forward
Reverse
V
100 nA
-100 nA
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=6A
3.0
5.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.75 1.0
Ω
C
ISS
C
OSS
C
RSS
4200
315
90
pF
pF
pF
Output Capacitance
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
123 155
nC
V
GS
=10V, V
DS
=640V, I
D
=12A
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
27
49
45 nC
80 nC
100 120
ns
198 220
ns
340 360
ns
180 200
ns
V
DD
=400V, I
D
=12A, R
G
=25
Ω
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
t
D(OFF)
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
12
48
A
A
I
S
=12A, V
GS
=0V
1.4
V
1000
17.0
ns
µC
V
GS
=0V, I
S
=12A, dI
F
/dt=100A/µs
(Note 1)
Q
RR
Note: 1. Pulse
Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-594.G
12N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
GS
Same Type
as DUT
Q
G
12V
10V
200nF
V
DS
Q
GS
Q
GD
50k
Ω
300nF
V
GS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BV
DSS
BV
DSS
-V
DD
V
DS
2
E
AS
=
LI
AS
BV
DSS
R
G
I
D
I
AS
L
10V
I
D
(t)
DUT
t
P
V
DD
V
DD
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-594.G
12N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
V
DS
R
G
L
–
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
V
GS
Gate Pulse Period
(Driver
10V
)
I
FM
, Body Diode Forward Current
I
SD
di/dt
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-594.G
12N80
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
200
400
600
800 1000
0
0.7
Gate Threshold Voltage, V
TH
(V)
1.4
2.1 2.8
3.5 4.2
Drain-Source Breakdown Voltage, BV
DSS
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-594.G
