UTC-Unisonic-Tech-14N65L-ML-TF3-T
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UNISONIC TECHNOLOGIES CO., LTD
14N65-ML
Power MOSFET
14A, 650V
N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-220F
DESCRIPTION
The UTC
14N65-ML
is a high voltage power MOSFET
combines advanced trench MOSFET designed to have better
characteristics, such as fast switching time, low gate charge, low
on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in high speed switching
applications of switching power supplies and adaptors.
1
1
TO-220F1
TO-220F2
FEATURES
1
1
* R
DS(ON)
≤
0.65
Ω @
V
GS
=10V, I
D
=7.0A
* Fast switching capability
TO-262
TO-263
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
14N65L-TA3-T
Halogen Free
1
2
3
S
S
S
S
S
S
S
14N65G-TA3-T
14N65G-TF1-T
14N65G-TF2-T
14N65G-TF3-T
14N65G-T2Q-T
14N65G-TQ2-T
14N65G-TQ2-R
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
Tube
Tube
G
G
G
G
G
G
G
D
D
D
D
D
D
D
14N65L-TF1-T
14N65L-TF2-T
Tube
14N65L-TF3-T
Tube
14N65L-T2Q-T
Tube
14N65L-TQ2-T
TO-263
Tube
14N65L-TQ2-R
TO-263
Tape Reel
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
14N65G-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F,
T2Q: TO-262, TQ2: TO-263
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 9
QW-R205-622.C
14N65-ML
Power MOSFET
MARKING
UTC
14N65
L: Lead Free
G: Halogen Free
Lot Code
Date Code
1
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2 of 9
QW-R205-622.C
14N65-ML
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
650
±30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
14
A
I
DM
28
A
Single Pulsed (Note 3)
E
AS
800
2.7
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
dv/dt
235
Power Dissipation
TO-220F/TO-220F1
TO-220F2
P
D
52
W
Junction Temperature
Storage Temperature
T
J
+150
°C
°C
T
STG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, I
AS
= 7.3A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
4. I
SD
≤
14A, di/dt
≤
2
00A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
θ
JA
TO-220/TO-262/TO-263
0.53
Junction to Case
TO-220F/TO-220F1
TO-220F2
θ
JC
2.4
°C/W
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QW-R205-622.C
14N65-ML
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250μA
V
DS
=650V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
650
2.0
V
10
μA
nA
Forward
Reverse
100
Gate- Source Leakage Current
I
GSS
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=
250μ
A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
R
DS(ON)
V
GS
=10V, I
D
=7.0A
0.55 0.65
Ω
C
ISS
1950
180
14
pF
pF
pF
Output Capacitance
C
OSS
C
RSS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
44
10
nC
nC
nC
ns
ns
ns
ns
V
DS
=520V, V
GS
=10V, I
D
=14A
I
G
=1mA (Note 1, 2)
Gate-Drain Charge
12
Turn-On Delay Time (Note 1)
Turn-On Rise Time
28
24
V
DS
=100V, V
GS
=10V, I
D
=14A,
R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
t
F
150
34
Turn-Off Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Reverse Recovery Time (Note 1)
I
S
I
SM
V
SD
t
rr
14
A
A
28
1.4
I
S
=14A , V
GS
=0V
I
S
=14A , V
GS
=0V
di/dt=100A/μs
V
430
ns
μ
C
Reverse Recovery Charge
Q
rr
14
Notes: 1. Pulse Test: Pulse width
≤ 300μs, Duty cycle ≤
2%.
2. Essentially independent of operating temperature.
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4 of 9
QW-R205-622.C
14N65-ML
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
V
DS
–
+
–
I
SD
L
R
G
Driver
V
DD
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
V
GS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-622.C
14N65-ML
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
R
L
V
DS
V
DS
90%
V
GS
R
G
V
DD
10%
V
GS
D.U.T.
t
D(ON)
t
D(OFF)
Pulse Width
≤
1
μ
s
Duty Factor
≤
0.1%
t
F
t
R
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
Same Type
as D.U.T.
Q
GS
Q
GD
V
DS
V
GS
DUT
Charge
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
I
D(t)
V
DS(t)
V
DD
D.U.T.
t
p
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R205-622.C
14N65-ML
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On-Resistance vs.
Drain Current vs. Drain-Source Voltage
Gate-Source Voltage
14
13
12
11
10
9
8
7
6
3
2
Note:
1.T
A
=25°C
Note:
1.T
A
=25°C
2.Pulse test
V
GS
=7~10V
2.Pulse test
6V
14A
I
D
=7A
5.5V
5
4
3
2
1
0
1
0
5V
4.5V
0
4
2
4
8
5
6
8
6
7
Drain-Source Voltage, V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Capacitance Characteristics
Gate Charge Characteristics
12
10
8
CISS
V
DS
=520V
V
GS
=10V
I
D
=14A
1000
100
10
Pulsed
COSS
CRSS
6
4
2
0
1
45 50
20 25 30 35 40
0
5
10
15
45
20 25 30 35 40
0
5
10
15
Drain-Source Voltage, V
DS
(V)
Total Gate Charge, Q
G
(nC)
Breakdown Voltage vs. Junction
Temperature
Drain-Source On-Resistance vs.
Junction Temperature
3
2.5
2
1.4
1.2
V
GS
=10V
I
D
=7A
Pulsed
I
D
=0.25mA
Pulsed
1.5
1
1
0.5
0
0.8
25
50
75
100
125
150
50
75
100
125
150
25
Junction Temperature, T
J
(°C)
Junction Temperature, T
J
(°C)
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7 of 9
QW-R205-622.C
14N65-ML
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Gate Threshold
Voltage vs.
Junction Temperature
Source Current vs. Source-Drain
Voltage
1.1
1
I
D
=0.25mA
Pulsed
10
1
T
A
=150°C
25°C
0.9
0.8
0.7
0.6
0.1
1.2
0.9
1 1.1
25
50
75
100
125
150
0.3 0.4
0.7 0.8
0.5 0.6
Source-Drain Voltage, V
SD
(V)
Junction Temperature, T
J
(°C)
Drain Current vs. Gate-Source
Voltage
Drain-Source On-Resistance vs.
Drain Current
14
12
10
8
1
0.8
0.6
0.4
0.2
T
A
=25°C
V
GS
=10V
Pulsed
T
A
=25°C
Pulsed
6
4
2
0
18
14 16
8
10
0
2
4
6
8
10
0
2
4
6
12
Drain Current, I
D
(A)
Gate-Source Voltage, V
GS
(V)
Power Dissipation vs. Junction
Temperature
Drain Current vs. Junction
Temperature
60
50
40
21
14
TO-220F1
30
20
10
0
7
0
50
75
100
25
125
150
0
25
50
75 100
125 150
Junction Temperature, T
J
(°C)
Junction Temperature, T
J
(°C)
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QW-R205-622.C
14N65-ML
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Safe Operating Area
MAX
100us
10
1
1ms
10ms
DC
Operation in this
area is limited by
R
DS(ON)
0.1
0.01
TO-220F1
T
J
=150°C
T
C
=25°C
Single Pulse
10
100
1
1000
Drain-Source Voltage, V
DS
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herei
n
.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereo
f
.
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QW-R205-622.C
