UTC-Unisonic-Tech-15NM70G-TF3-T
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UNISONIC TECHNOLOGIES CO., LTD
15NM70-U2
Power MOSFET
N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The
UTC 15NM70-U2
is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at DC-DC, AC-DC converters for power applications.
FEATURES
*
@ V
GS
=10V, I
D
=7.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
15NM70L-TA3-T
15NM70L-TF1-T
15NM70L-TF34-T
15NM70L-TM3-T
15NM70L-TN3-R
15NM70G-TA3-T
15NM70G-TF1-T
15NM70G-TF34-T
15NM70G-TM3-T
15NM70G-TN3-R
TO-220
TO-220F1
TO-220F4
TO-251
G
G
G
G
G
D
D
D
D
D
Tube
Tube
Tube
Tube
TO-252
Tape Reel
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 7
Copyright © 2017 Unisonic Technologies Co., Ltd
QW-R205-310.C
15NM70-U2
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R205-310.C
15NM70-U2
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
700
±30
15
V
Continuous Drain Current
Pulsed Drain Current
Continuous
A
Pulsed (Note 2)
I
DM
60
A
Avalanche Current (Note 3)
Avalanche energy
I
AR
2.9
429
4.6
260
A
Single Pulsed (Note 3)
E
AS
mJ
V/nS
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
TO-220
TO-220F/TO-220F1
TO-220F4
Power Dissipation
P
D
54
W
TO-251/TO-252
90
W
°C
°C
Junction Temperature
T
J
+150
Storage Temperature Range
T
STG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=102mH, I
AS
=2.9A, V
DD
=50V, R
G
=25
ꢀ
, Starting T
J
= 25°C.
4. I
SD
≤
15A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
= 25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220/TO-220F
TO-220F1/TO-220F4
TO-251/TO-252
TO-220
Junction to Ambient
Junction to Case
θ
JA
110
°C/W
°C/W
0.48
TO-220F/TO-220F1
TO-220F4
θ
JC
2.31
1.39
°C/W
°C/W
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R205-310.C
15NM70-U2
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250µA
V
DS
=700V, V
GS
=0V
V
DS
=0V ,V
GS
=+30V
V
DS
=0V ,V
GS
=-30V
700
2.5
V
10
µA
Forward
Reverse
+100 nA
-100 nA
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
=250µA
V
GS
=10V, I
D
=7.5A
4.5
V
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.45
ꢀ
C
ISS
C
OSS
C
RSS
1064
543
37
pF
pF
pF
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-on Delay Time (Note 1)
Rise Time
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
95
7.8
26
nC
nC
nC
ns
ns
ns
ns
V
DS
=50V, V
GS
=10V, I
D
=1.3A ,
I
G
=100µA (Note 1, 2)
62
V
DD
=30V, V
GS
=10V, I
D
=0.5A,
R
G
=25
ꢀ
(Note 1, 2)
132
240
145
Turn-off Delay Time
t
D(OFF)
t
F
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Maximum Body-Diode Continuous Current
Reverse Recovery Time (Note 1)
I
S
I
SM
V
SD
t
rr
15
60
A
A
I
S
=15A, V
GS
=0V
I
S
=15A, V
GS
=0V,
dI
F
/dt=100A/µs
1.4
V
395
ns
µC
Reverse Recovery Charge
Q
rr
5.92
Note: 1. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R205-310.C
15NM70-U2
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
QW-R205-310.C
15NM70-U2
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
10%
V
GS
t
D(ON)
t
D(OFF)
t
F
t
R
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R205-310.C
15NM70-U2
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R205-310.C
