UTC-Unisonic-Tech-1N60L-T92-K
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UNISONIC TECHNOLOGIES CO., LTD
1N60
Power MOSFET
1.2A, 600V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
1N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
<11.5
Ω
@ V
GS
=10V, I
D
=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1 of 7
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-052.N
1N60
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
–
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
1N60G-AA3-R
1N60G-TA3-T
1N60G-TF2-T
1N60G-TF3-T
1N60G-TM3-T
1N60G-TMS-T
1N60G-TMS2-T
1N60G-TMS4-T
1N60G-TN3-R
1N60G-TND-R
1N60G-T60-K
1N60G-T92-B
1N60G-T92-K
D: Drain
S: Source
SOT-223
TO-220
Tape Reel
Tube
G
G
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
D
D
1N60L-TA3-T
1N60L-TF2-T
1N60L-TF3-T
1N60L-TM3-T
1N60L-TMS-T
1N60L-TMS2-T
1N60L-TMS4-T
1N60L-TN3-R
1N60L-TND-R
1N60L-T60-K
1N60L-T92-B
1N60L-T92-K
Note: Pin
Assignment: G: Gate
TO-220F2
TO-220F
TO-251
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
Bulk
TO-252D
TO-126
TO-92
Tape Box
Bulk
TO-92
MARKING
PACKAGE
MARKING
SOT-223
TO-220
TO-220F
TO-220F2
TO-251
TO-251S2
TO-251S4
TO-252
TO-252D
TO-251S
TO-126
TO-92
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R502-052.N
1N60
Power MOSFET
■
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
RATINGS
600
±30
1.2
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
I
D
1.2
A
I
DM
4.8
A
Single Pulsed (Note 3)
Repetitive (Note 2)
E
AS
50
mJ
mJ
V/ns
Avalanche Energy
E
AR
4.0
Peak Diode Recovery dv/dt (Note 4)
SOT-223
dv/dt
4.5
8
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
28
40
21
Power Dissipation
P
D
W
TO-220F
TO-220F2
23
TO-92(T
A
=25°
С
)
TO-126
1
12.5
Junction Temperature
Operating Temperature
Storage Temperature
T
J
+150
-55 ~ +150
-55 ~ +150
°
С
°
С
°
С
T
OPR
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
150
UNIT
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220/TO-220F
TO-220F2
110
Junction to Ambient
θ
JA
°
С
/W
62.5
62.5
140
132
14
TO-92
TO-126
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
TO-220
4.53
3.13
5.95
5.43
80
Junction to Case
θ
Jc
°
С
/W
TO-220F
TO-220F2
TO-92
TO-126
10
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R502-052.N
1N60
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25
℃
, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250
μ
A
600
V
10
μ
A
100 nA
-100 nA
V/
℃
V
DS
=600V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
Forward
Reverse
Gate-Source Leakage Current
I
GSS
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250
μ
A
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250
μ
A
2.0
4.0
9.3 11.5
V
V
GS
=10V, I
D
=0.6A
Ω
C
ISS
C
OSS
C
RSS
120 150
pF
20 25 pF
3.0 4.0 pF
Output Capacitance
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
t
R
t
D(OFF)
t
F
5
25
7
20
60
25
60
ns
ns
ns
ns
Turn-On Rise Time
V
DD
=300V, I
D
=1.2A, R
G
=50
Ω
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
25
Total Gate Charge
Q
G
5.0 6.0 nC
V
DS
=480V, V
GS
=10V, I
D
=1.2A
(Note 2,3)
Gate-Source Charge
Q
GS
Q
GD
1.0
2.6
nC
nC
Gate-Drain Charge
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
V
SD
V
GS
=0V, I
S
=1.2A
1.4
1.2
V
A
I
S
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
4.8
A
Reverse Recovery Time
t
rr
160
0.3
ns
V
GS
=0V, I
S
=1.2A
dI
F
/dt=100A/
μ
s (Note 1)
Reverse Recovery Charge
Q
RR
μ
C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
3. Essentially Independent of Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R502-052.N
1N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
V
DS
–
+
–
L
R
G
Driver
V
DD
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
V
GS
P. W.
V
GS
(Driver)
Period
D=
P.W.
Period
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
QW-R502-052.N
1N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
I
D(t)
V
DS(t)
V
DD
10V
D.U.T.
t
p
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R502-052.N
1N60
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R502-052.N
