UTC-Unisonic-Tech-2N90G-TM3-T
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UNISONIC TECHNOLOGIES CO., LTD
2N90
Power MOSFET
2A, 900V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
2N90
is an N-channel mode power MOSFET
using UTC’s advanced technology to provide costumers with
planar stripe and DMOS technology. This technology
specialized in allowing a minimum on-state resistance and
superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC
2N90
is universally applied in high efficiency
switch mode power supply.
FEATURES
* R
DS(ON)
< 7.2
Ω
@ V
GS
=10V, I
D
=1.1A
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
2N90L-TA3-T
Halogen Free
1
2
3
S
S
S
S
S
2N90G-TA3-T
2N90G-TF3-T
2N90G-TM3-T
2N90G-TN3-R
2N90G-TND-R
TO-220
TO-220F
TO-251
G
G
G
G
G
D
D
D
D
D
Tube
Tube
2N90L-TF3-T
2N90L-TM3-T
Tube
2N90L-TN3-R
TO-252
Tape Reel
Tape Reel
2N90L-TND-R
TO-252D
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 7
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-478.E
2N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
900
±30
2.2
UNIT
V
Drain-Source Voltage (Note 2)
Gate-Source Voltage
V
Continuous
A
Drain Current
Pulsed (Note 2)
I
DM
8.8
A
Avalanche Current (Note 2)
Avalanche Energy
I
AR
2.2
A
Single Pulsed (Note 3)
Repetitive (Note 2)
E
AS
170
8.5
mJ
mJ
V/ns
E
AR
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.0
85
TO-220F
25
Power Dissipation
P
D
W
TO-251/ TO-252
TO-252D
43
Junction Temperature
Storage Temperature
T
J
+150
°C
°C
T
STG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 65mH, I
AS
= 2.2A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
= 25°C
4. I
SD
≤
2.2A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-220F
TO-251/ TO-252
TO-252D
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
Junction to Case
θ
JA
110
TO-220
1.47
5
TO-220F
θ
JC
°C/W
TO-251/ TO-252
TO-252D
2.85
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R502-478.E
2N90
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
900
V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
1.0
V/°C
V
DS
=900V, V
GS
=0V
10
Drain-Source Leakage Current
Gate- Source Leakage Current
I
DSS
I
GSS
µA
V
DS
=720V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
100
Forward
Reverse
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
g
FS
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=1.1A
3.0
5.0
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
5.6 7.2
2.0
V
DS
=50V, I
D
=1.1A (Note 1)
C
ISS
C
OSS
C
RSS
480 520
pF
Output Capacitance
V
GS
=0V, V
DS
=25V, f=1.0MHz
45
7
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
t
D(ON)
t
R
t
D(OFF)
t
F
50
65
90
45
16
5.5
4.5
ns
ns
V
GS
=10V, V
DD
=30V, I
D
=0.5A,
R
G
=25
Ω
(Note 1,2)
Turn-OFF Delay Time
Fall-Time
ns
ns
Total Gate Charge
Q
G
26 nC
nC
V
GS
=10V, V
DS
=50V, I
D
=1.3A
I
G
=100µA (Note 1,2)
Gate to Source Charge
Gate to Drain Charge
Q
GS
Q
GD
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
2.2
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
8.8
1.4
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
SD
t
rr
I
S
=2.2A, V
GS
=0V
V
400
1.6
ns
µC
I
S
=2.2A,V
GS
=0V,dI
F
/dt=100A/µ
s (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R502-478.E
2N90
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
V
DS
–
+
–
L
R
G
Driver
V
DD
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
V
GS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
QW-R502-478.E
2N90
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
10%
V
GS
t
D(ON)
t
D(OFF)
t
F
t
R
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R502-478.E
2N90
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R502-478.E
