UTC-Unisonic-Tech-2NM65G-TN3-R
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UNISONIC TECHNOLOGIES CO., LTD
2NM65
Power MOSFET
2.0A, 650V
N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC
2NM65
is a Super Junction MOSFET Structure. It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC
2NM65
is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* R
DS(ON)
≤ 2.52 Ω @ V
GS
=10V, I
D
=1.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1 of 9
Copyright © 2022 Unisonic Technologies Co., Ltd
QW-R205-129.D
2NM65
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
2NM65G-AA2-R
2NM65G-AA3-R
2NM65G-TF1-T
2NM65G-TF2-T
2NM65G-TF3-T
2NM65G-TM3-T
2NM65G-TN3-R
2NM65G-S08-R
2NM65G-T60-K
1
2
D
D
D
D
D
D
D
S
D
3
S
S
S
S
S
S
S
S
S
4
–
5
–
6
–
7
–
8
–
2NM65L-AA2-R
2NM65L-AA3-R
2NM65L-TF1-T
2NM65L-TF2-T
2NM65L-TF3-T
2NM65L-TM3-T
2NM65L-TN3-R
2NM65L-S08-R
2NM65L-T60-K
SOT-223-2
SOT-223
TO-220F1
TO-220F2
TO-220F
TO-251
G
G
G
G
G
G
G
S
Tape Reel
Tape Reel
Tube
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Tube
Tube
–
–
–
–
–
–
–
–
–
–
Tube
TO-252
Tape Reel
Tape Reel
Bulk
SOP-8
G
–
D
–
D
–
D
–
D
–
TO-126
G
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
MARKING
SOT-223-2 / SOT-223
TO-220F1 / TO-220F2 / TO-220F / TO-251 / TO-252
TO-126
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
2NM65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
650
±30
2
V
Continuous
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
I
DM
4
A
Avalanche Energy
E
AS
38
2.7
10
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
SOT-223-2/SOT-223
dv/dt
TO-220F1/TO-220F2
TO-220F
24
W
Power Dissipation
P
D
TO-251/TO-252
TO-126
44
12.5
W
W
W
°С
°С
SOP-8
2
Junction Temperature
Storage Temperature
T
J
+150
T
STG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=30mH, I
AS
=1.6A, V
DD
=50V, R
G
=25 Ω, Starting T
J
= 25°C
4. I
SD
≤2.0A, di/dt≤200A/μs, V
DD
≤ BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SOT-223-2/SOT-223
SYMBOL
θ
JA
RATINGS
150
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F
62.5
°C/W
Junction to Ambient
Junction to Case
TO-251/TO-252
TO-126
100
132
190
12
°C/W
°C/W
°C/W
°C/W
SOP-8
SOT-223-2/SOT-223
TO-220F1/TO-220F2
TO-220F
5.2
°C/W
θ
JC
TO-251/TO-252
TO-126
2.8 (Note)
10.42
°C/W
°C/W
°C/W
SOP-8
62.5 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
2NM65
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 650V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
650
2.5
V
10
μA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
=1.0A
4.5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
2.52
Ω
C
ISS
C
OSS
C
RSS
156
35
pF
pF
pF
Output Capacitance
V
GS
=0V, V
DS
=50V, f =1MHz
DS
=520V, V
GS
=10V, I
D
=2.0A
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
2.1
Q
G
Q
GS
Q
GD
t
D (ON)
t
R
13
6
nC
nC
nC
ns
ns
ns
ns
V
Gate-Source Charge
(Note 1, 2)
Gate-Drain Charge
3
Turn-On Delay Time (Note 1)
Turn-On Rise Time
4
17
21
26
V
DD
=100V, V
GS
=10V, I
D
=2.0A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Drain-Source Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
2
4
A
A
I
S
=2.0A, V
GS
=0V
I
S
=2.0A, V
GS
=0V
dI/dt=100A/µs
1.4
V
196
1
nS
μC
Q
rr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
2NM65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
V
DS
–
+
–
I
SD
L
R
G
Driver
V
DD
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
V
GS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
2NM65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
90%
10%
V
GS
t
D(ON)
t
D(OFF)
t
F
t
R
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
2NM65
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
2NM65
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
2NM65
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-129.D
