UTC-Unisonic-Tech-2SB1412L-R-TN3-R
| Part # | UTC-Unisonic-Tech-2SB1412L-R-TN3-R |
Download  | UTC-Unisonic-Tech-2SB1412L-R-TN3-R |
UNISONIC TECHNOLOGIES CO., LTD
2SB1412
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC
2SB1412
is an epitaxial planar type PNP silicon
transistor.
FEATURES
* Excellent DC current gain characteristics
* Low V
CE(SAT)
V
CE(SAT)
= -0.35V (Typ)
(I
C
/I
B
= -4A/-0.1A)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-252
Lead Free
Halogen Free
2SB1412G-x-TN3-R
E: Emitter
1
2
3
2SB1412L-x-TN3-R
B
C
E
Tape Reel
Note: Pin Assignment: B: Base
C: Collector
MARKING
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-021.E
2SB1412
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25
C, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
UNIT
V
Collector-Base Voltage
-30
Collector-Emitter Voltage
-20
V
Emitter-Base Voltage
-6
V
Collector Current(DC)
-5
-10
A
Collector Current(PULSE) Single pulse, Pw=10ms
Collector Power Dissipation
Collector Power Dissipation (T
C
=25
C) (note2)
Junction Temperature
I
CP
A
1
W
W
C
C
P
D
10
T
J
+150
-40 ~ +150
Storage Temperature
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When mounted on a 40×40×0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS
(T
A
=25
C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
TEST CONDITIONS
I
C
= -50
μ
A
MIN TYP MAX
UNIT
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
-30
-20
-6
V
V
I
C
= -1mA
I
E
= -50
μ
A
V
V
CB
= -20V
-0.5
-0.5
390
-1.0
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
V
EB
= -5V
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
h
FE
V
CE
= -2V,Ic= -0.5A
82
V
CE(SAT)
I
C
/I
B
= -4A/-0.1A
V
f
T
V
CE
= -6V, I
E
= 50 mA, f=30MHz
120
60
MHz
pF
Output Capacitance
C
OB
V
CB
= -20V, I
E
= 0 A, f=1MHz
CLASSIFICATION OF h
FE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R209-021.E
2SB1412
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
Grounded Emitter Output
Characteristics
-10
-5
-5
-4
-50mA
-45mA
-30mA
-25mA
Ta=25
℃
V
CE
= -2V
-2
-20mA
Ta=100
℃
-1
-500m
-15mA
Ta=25
℃
-3
-2
-1
-200m
-10mA
-35mA
-100m
-50m
Ta= -25
℃
-40mA
-0.8
-5mA
-20m
-10m
-5m
-2m
-1m
I
B
=0mA
-1.6 -2.0
0
0
-0.2 -0.4 -0.6
-0.8 -1.0
-1.2 -1.4
Base to Emitter Voltage:V
BE
(V)
0
-0.4
-1.2
Collector to
Emitter Voltage:V
CE
(V)
DC Current Gain vs.Collector Current (I)
DC Current Gain vs.Collector
Current(II)
5k
5k
Vc
E
= -1V
Ta=25
℃
2k
1k
2k
1k
Ta=100
℃
500
500
Vc
E
= -5V
200
100
200
100
Vc
E
= -2V
Vc
E
= -1V
Ta=25
℃
Ta= -25
℃
50
50
20
10
20
10
5
5
-0.05 -0.
1
–
0.2
-0.01-0.02
-5m
-0.5
-2 -5
-10
-1
-1
m
–
2m
-0.05 -0.
1
–
0.2
-0.01-0.02
-5m
-0.5
-2 -5
-10
-1
m
–
2m
-1
Collector Current : Ic(A)
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (I)
DC Current Gain vs.Collector Current (III)
Vc
E
= -2V
5k
-5
Ta=25
℃
2k
1k
-2
-1
Ta=100
℃
500
-0.5
Ic/I
B
=50/1
40/1
200
100
-0.2
-0.1
Ta= -25
℃
30/1
10/1
Ta=25
℃
50
-0.05
20
10
-0.02
-0.01
5
-0.05 -0.
1
–
0.2
-0.01-0.02
-5m
-0.5
-2 -5
-10
-2m
-1
-0.05 -0.
1
–
0.2
-0.01-0.02
-5m
-0.5
-2 -5
-10
-1
-1
m
–
2m
Collector Current : Ic(A)
Collector Current : Ic(A)
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R209-021.E
2SB1412
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector-emitter Saturation Voltage
vs.Collector Current (II)
Collector-emitter Saturation Voltage
vs.Collector Current (III)
-5
-5
Ic/I
B
=10
Ic/I
B
=30
-2
-1
-2
-1
Ta=100
℃
Ta=25
℃
-0.5
-0.5
-0.2
-0.1
-0.2
-0.1
Ta=100
℃
-0.05
-0.05
Ta=25
℃
Ta= -25
℃
-0.02
-0.01
-0.02
-0.01
Ta= -25
℃
-0.05 -0.
1
–
0.2
-0.01-0.02
-0.05 -0.
1
–
0.2
-0.01-0.02
-5m
-0.5 -2
-5 -10
-1
-5m
-0.5
-2 -5
-10
-2m
-2m
-1
Collector Current : Ic(A)
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (IV)
Collector-emitter Saturation Voltage
vs.Collector Current (V)
-5
-5
Ic/I
B
=40
Ic/I
B
=50
Ta= -25
℃
Ta=25
℃
Ta= -25
℃
-2
-1
-2
-1
Ta=25
℃
Ta=100
℃
-0.5
-0.5
-0.2
-0.1
-0.2
-0.1
Ta=100
℃
-0.05
-0.05
-0.02
-0.01
-0.02
-0.01
-0.05 -0.
1
–
0.2
-0.01-0.02
-0.05 -0.
1
–
0.2
-0.01-0.02
-5m
-0.5 -2
-5 -10
-1
-5m
-0.5
-2 -5
-10
-2m
-2m
-1
Collector Current : Ic(A)
Collector Current : Ic(A)
Gain Bandwidth Product vs.Emitter
Current
Collector Output Capacitance
vs.Collector-Base Voltage
1000
500
1000
500
Ta=25
℃
f =1MHz
I
E
=0A
Ta=25
℃
Vc
E
= -6V
200
100
200
50
100
50
20
10
5
20
10
2
1
1
-0.1 -0.2
-1 -2
-0.5
-5 -10
-20 -50
5
2
10 20
50 100200
500 1000
Emitter Current : I
E
(mA)
Collector to Base Voltage:V
CB
(V)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R209-021.E
2SB1412
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Emitter Input Capacitance vs.Emitter-
Base Voltage
1000
500
Ta=25
℃
f=1MHz
I
c
=0A
200
100
50
20
-0.2
-0.5 -1
-2
-5 -10
-0.1
Emitter To Base Voltage : V
EB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R209-021.E
