UTC-Unisonic-Tech-2SB649AL-C-T60-K
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UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
PNP SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
1
SOT-89
TO-92
SOT-223
TO-252
APPLICATIONS
1
Low frequency power amplifier complementary pair with UTC
2SD669/A
*
1
1
1
TO-126
TO-92NL
TO-126C
1
1
TO-126S
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
–
Halogen Free
1
B
B
B
E
E
E
E
E
E
E
2
3
E
E
E
B
B
B
B
B
B
B
2SB649xG-x-AA3-R
2SB649xG-x-AB3-R
2SB649xG-x-TN3-R
2SB649xG-x-T60-K
2SB649xG-x-T6C-K
2SB649xG-x-T6S-K
2SB649xG-x-T92-B
2SB649xG-x-T92-K
2SB649xG-x-T9N-B
2SB649xG-x-T9N-K
SOT-223
SOT-89
TO-252
TO-126
TO-126C
TO-126S
TO-92
C
C
C
C
C
C
C
C
C
C
Tape Reel
Tape Reel
Tape Reel
Bulk
–
2SB649xL-x-TN3-R
2SB649xL-x-T60-K
2SB649xL-x-T6C-K
2SB649xL-x-T6S-K
2SB649xL-x-T92-B
2SB649xL-x-T92-K
2SB649xL-x-T9N-B
2SB649xL-x-T9N-K
Bulk
Bulk
Tape Box
Bulk
TO-92
TO-92NL
TO-92NL
Tape Box
Bulk
Note: Pin
Assignment: C: Collector
B: Base
E: Emitter
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R204-006.J
2SB649/A
PNP SILICON TRANSISTOR
MARKING
MARKING
PACKAGE
2SB649
2SB649A
SOT-223
SOT-89
TO-252
TO-92
UTC
2SB649
UTC
2SB649A
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
TO-92NL
Data Code
Data Code
TO-126
TO-126C
TO-126S
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R204-006.J
2SB649/A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
RATING
UNIT
V
Collector-Base Voltage
-180
2SB649
-120
V
Collector-Emitter Voltage
V
CEO
2SB649A
-160
V
Emitter-Base Voltage
Collector Current
V
EBO
I
C
-5
V
-1.5
A
Collector Peak Current
l
C(PEAK)
-3
A
SOT-89
0.5
W
W
W
W
SOT-223
1
TO-92/TO-92NL
TO-126
0.6
Power Dissipation
P
D
1
1.3
TO-126C/TO-126S
TO-252
2
W
°C
°C
Junction Temperature
Storage Temperature
T
J
+150
-40 ~ +150
T
STG
Note: Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-89
SYMBOL
RATINGS
UNIT
°C/W
38
15
SOT-223
TO-92/ TO-92NL
TO-126
80
Junction to Case
θ
JC
6.25
10
TO-126C/TO-126S
TO-252
4.5
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL
TEST CONDITIONS
Collector to Base Breakdown Voltage
MIN TYP
MAX UNIT
BV
CBO
I
C
=-1mA, I
E
=0
BV
CEO
I
C
=-10mA, R
BE
=
BV
EBO
I
E
=-1mA, I
C
=0
-180
-120
-160
-5
V
2SB649
Collector to Emitter
Breakdown Voltage
V
2SB649A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
V
I
CBO
h
FE1
h
FE2
h
FE1
h
FE2
V
CB
=-160V, I
E
=0
-10
μ
A
V
CE
=-5V, I
C
=-150mA (note)
V
CE
=-5V, I
C
=-500mA (note)
V
CE
=-5V, I
C
=-150mA (note)
V
CE
=-5V, I
C
=-500mA (note)
60
30
60
30
320
2SB649
DC Current Gain
200
2SB649A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
V
CE(SAT)
I
C
=-600mA, I
B
=-50mA
-1
V
V
V
BE
f
T
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V,I
C
=-150mA
V
CB
=-10V, I
E
=0, f=1MHz
-1.5
Current Gain Bandwidth Product
Output Capacitance
140
27
MHz
pF
Cob
Note: Pulse test.
CLASSIFICATION OF h
FE1
RANK
C
RANGE
B
D
2SB649
60-120
60-120
100-200
100-200
160-320
–
2SB649A
UNISONIC TECHNOLOGIES CO., LTD
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2SB649/A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
Typical Transfer Characteristics
-500
-100
1.0
0.8
0.6
0.4
0.2
V
CE
=-5V
-2.0
-1.5
-10
-1
-1.0
-0.5mA
I
B
=0
T
C
=25°
С
-40 -50
0
-10
-20
-30
0
-0.2
-0.4
-0.6
-0.8
-1.0
Collector to Emitter Voltage, V
CE
(V)
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
DC Current Transfer Ratio vs.
Collector Current
350
300
250
-1.2
-1.0
I
C
=10 I
B
V
CE
=-5V
-0.8
-0.6
200
150
100
-0.4
-0.2
0
50
1
-1
-10
-100
-1,000
-1
-10
-100
-1,000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product
vs. Collector Current
V
CE
=5V
Ta=25°
С
-1.2
-240
-200
-160
-120
-80
I
C
=10I
B
-1.0
-0.8
-0.6
-0.4
-0.2
0
-40
0
-10
-1
-3
-10 -30 -100
-300 -1000
Collector Current, I
C
(mA)
-30
-100
-300
-1000
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-006.J
2SB649/A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R204-006.J
