UTC-Unisonic-Tech-2SC3356G-A-AE2-R
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UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER
3
3
1
1
DESCRIPTION
2
2
The UTC
2SC3356
is designed for such applications as: DC/DC
SOT-23-3
SOT-23
converters, supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
(JEDEC TO-236)
(EIAJ SC-59)
FEATURES
1
* Low Noise and High Gain
* High Power Gain
SOT-89
ORDERING INFORMATION
Ordering Number
Pin Description
Package
Packing
Lead Free
Halogen Free
1
2
B
B
C
3
–
2SC3356G-x-AE2-R
SOT-23-3
SOT-23
SOT-89
E
E
B
C
Tape Reel
Tape Reel
Tape Reel
2SC3356L-x-AE3-R
–
–
C
E
2SC3356G-x-AB3-R
Note: Pin
Assignment: B: Base
C: Collector
E: Emitter
MARKING
SOT-23-3/SOT-23
SOT-89
2SC3356L
2SC3356G
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R206-024.H
2SC3356
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
RATINGS
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
20
12
3
V
V
100
mA
SOT-23-3
SOT-23
SOT-89
200
mW
Power Dissipation
P
D
500
+150
mW
°
С
Junction Temperature
Storage Temperature
T
J
T
STG
-65 ~ +150
°
С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
a
=25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
TEST CONDITIONS
I
C
=10
μ
A, I
E
=0
MIN TYP MAX
UNIT
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
20
12
3
V
V
I
C
=1mA, R
BE
=
∞
I
E
=10
μ
A, I
C
=0
V
V
CB
=10V,I
E
=0
1.0
1.0
300
μ
A
μ
A
I
EBO
V
EB
=1 V, I
C
=0
h
FE
V
CE
=10 V, I
C
=20 mA
V
CE
=10 V, I
C
=20 mA
V
CB
=10 V, I
E
=0, f =1.0MHz
V
CE
=10 V, I
C
=7mA, f =1.0GHz
50
Gain Bandwidth Product
f
T
7
GHz
pF
Feed-Back Capacitance
C
RE
1.0
2.0
Noise Figure
NF
dB
CLASSIFICATION OF h
FE
RANK
A
B
C
RANGE
50-170
160-240
230-300
UNISONIC TECHNOLOGIES CO., LTD
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2SC3356
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
V
CE
=10V
Insertion Gain vs. Collector Current
15
200
100
50
10
5
20
10
V
CE
=10V
f=1.0GHz
0
0.5
1
5
10
50
70
50
0.5
1
5
10
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
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2SC3356
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Noise Figure, Forward Insertion Gain
vs. Collector to Emitter Voltage
Noise Figure vs. Collector Current
V
CE
=10V
f=1.0GHz
7
5
4
f=1.0GHz
I
C
=20mA
6
5
4
2
|S
21
θ
|
3
2
3
2
1
0
NF
1
0
1
5
10
50 70
0
2
4
6
8
10
0.5
Collector Current, I
C
(mA)
Collector to Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-024.H
