UTC-Unisonic-Tech-2SC4672G-B-AB3-R

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UTC-Unisonic-Tech-2SC4672G-B-AB3-R
UNISONIC TECHNOLOGIES CO., LTD  
2SC4672  
NPN SILICON TRANSISTOR  
LOW FREQUENCY TRANSISTOR  
(50V,2A)  
DESCRIPTION  
The UTC
2SC4672
is a low frequency transistor. Excellent DC  
current gain characteristics.  
FEATURES  
*Low Saturation Voltage, Typically V

CE(SAT)

=0.1V at I

C

/ I

B

=1A / 50mA  
*Excellent DC Current Gain Characteristics  
ORDERING INFORMATION  
Pin Assignment  
Order Number  
Package  
SOT-89  
Packing  
1
2
3
2SC4672G-x-AB3-R  
B
C
E
Tape Reel  
Note: Pin Assignment: B: Base
 
C: Collector
 
E: Emitter  
MARKING  
1 of 2  
Copyright © 2015 Unisonic Technologies Co.,  
QW-R208-004.F  

2SC4672  
NPN SILICON TRANSISTOR  
ABSOLUATE MAXIUM RATINGS
(T

A

= 25°C, unless otherwise specified)  
PARAMETER  
Collector to Base Voltage  
SYMBOL  
V

CBO  

V

CEO  

V

EBO  

I

C  

RATINGS  
UNIT  
V
60  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
50  
V
6
V
2
5
A
Collector Current (Pulse) (Note 1)  
Collector Dissipation  
I

CP  

A
P

C  

500  
mW  
°C  
°C  
Junction Temperature  
T

J  

+150  
-40 ~ +150  
Storage Temperature  
T

STG  

Note: 1.Single pulse, P

W

=10ms  
2.Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS
(T

A

= 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

TEST CONDITIONS  
I

C

=50
A  
I

C

=1mA  
I

E

=50
A  
V

CB

=60V  
V

EB

=5V  
MIN  
60  
50  
6
TYP  
MAX  
UNIT  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V
V
0.1  
0.1  
A  
A  
V
Emitter Cutoff Current  
I

EBO  

Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
V

CE(SAT)

I

C

/I

B

=1A/50mA (Note)  
0.1  
0.35  
400  
h

FE  

f

T  

V

CE

=2V, I

C

=0.5A (Note)  
V

CE

=2V, I

E

=-0.5A, f=100MHz  
V

CB

=10V, I

E

=0A,f=1MHz  
120  
210  
25  
MHz  
pF  
Output Capacitance  
C

OB  

Note : Measured using pulse current.  
CLASSIFICATION OF h

FE  

■
RANK  
A
B
RANGE  
120 ~ 240  
200 ~ 400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R208-004.F  

2SC4672  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
S.O.A  
IC MAX.(Pulsed)  
IC MAX (C
ontinuous)  
DC  
Collector-Emitter Voltage, V

CE

(V)  
140  
120  
100  
80  
60  
40  
20  
0
0.001  
0.01  
0.1  
1
Collector Current, I

C

(A)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R208-004.F  

2SC4672  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein
 
.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. The information presented in  
this document does not form part of any quotation or contrac
t
,
i
s believed to be accurate and reliable  
and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R208-004.F