UTC-Unisonic-Tech-2SD1816L-S-TM3-T
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UNISONIC TECHNOLOGIES CO., LTD
2SD1816
NPN PLANAR TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATIONS
FEATURES
* Low collector-to-emitter saturation voltage
* Good linearity of h
FE
* Small and slim package facilitating compactness of sets.
* High f
T
* Fast switching speed
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
B
B
B
B
B
B
2
C
C
C
C
C
C
3
E
E
E
E
E
E
2SD1816L-x-TA3-T
2SD1816L-x-TF1-T
2SD1816L-x-TF3-T
2SD1816L-x-TM3-T
2SD1816L-x-TMS-T
2SD1816L-x-TN3-R
2SD1816G-x-TA3-T
2SD1816G-x-TF1-T
2SD1816G-x-TF3-T
2SD1816G-x-TM3-T
2SD1816G-x-TMS-T
2SD1816G-x-TN3-R
TO-220
TO-220F1
TO-220F
TO-251
Tube
Tube
Tube
Tube
TO-251S
TO-252
Tube
Tape Reel
Note: Pin
assignment: B: Base
C: Collector
E: Emitter
MARKING
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Copyright © 2021 Unisonic Technologies Co., Ltd
QW-R209-011.I
2SD1816
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
120
100
6
V
V
V
A
A
V
CEO
V
EBO
DC
4
Collector Current
I
C
PULSE(Note 2)
TO-220/TO-220F
TO-220F1
8
2
1
W
W
Collector Power Dissipation
P
D
TO-251/TO-251S
TO-252
Junction Temperature
Storage Temperature
T
J
+150
C
C
T
STG
-40 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Duty=1/2, Pw=20ms.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
BE(SAT)
V
CE(SAT)
I
CBO
TEST CONDITIONS
I
C
=10
μ
A, I
E
=0
MIN TYP MAX
UNIT
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
120
100
6
V
V
I
C
=1mA, R
B
=
∞
I
E
=10
μ
A, I
C
=0
V
I
C
= 2A, I
B
=0.2A
I
C
= 2A, I
B
=0.2A
V
CB
= 100 V, I
E
=0
V
EB
= 4V, I
C
=0
0.9
1.2
V
150 400
mV
μ
A
μ
A
1
1
Emitter Cut-Off Current
I
EBO
h
FE1
V
CE
= 5V, I
C
= 0.5A
V
CE
=5V, I
C
= 3A
V
CE
=10V, I
C
=0.5A
V
CB
=10V, I
E
=0A, f =1MHz
See test circuit
70
40
560
DC Current Transfer Ratio
h
FE2
Transition Frequency
Output Capacitance
Turn-on Time
f
T
180
40
MHz
pF
ns
C
ob
t
ON
100
900
50
Storage Time
t
STG
See test circuit
ns
Fall Time
t
F
See test circuit
ns
CLASSIFICATION of h
FE1
RANK
Q
R
S
T
H
RANGE
70 -140
100 – 200
140 – 280
200 – 400
270 – 560
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-011.I
2SD1816
NPN PLANAR TRANSISTOR
TEST CIRCUIT
PW=20
μ
S
Duty Cycle
≒
1%
I
B
1
INPUT
R
B
OUTPUT
I
B2
V
R
50
+
100
+
µ
µ
470
-5V
50V
Ic=10, I
B1
= -10, I
B2
=2A
Unit (resistance:
Ω
, capacitance: F)
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QW-R209-011.I
2SD1816
NPN PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-011.I
2SD1816
NPN PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-011.I
