UTC-Unisonic-Tech-3N100G-TN3-R
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UNISONIC TECHNOLOGIES CO., LTD
3N100-C
Power MOSFET
3A, 1000V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N100-C
provide excellent R
DS(ON)
, low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES0
* R
DS(ON)
≤
5.5
Ω
@ V
GS
=10V, I
D
=1.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
D
3
S
S
S
S
S
3N100L-TA3-T
3N100L-TF3-T
3N100L-TF1-T
3N100L-TM3-T
3N100L-TN3-R
3N100G-TA3-T
3N100G-TF3-T
3N100G-TF1-T
3N100G-TM3-T
3N100G-TN3-R
TO-220
TO-220F
TO-220F1
TO-251
G
G
G
G
G
Tube
Tube
Tube
Tube
Tape Reel
TO-252
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 9
Copyright © 2019 Unisonic Technologies Co., Ltd
QW-R205-562.A
3N100-C
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-562.A
3N100-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
1000
±30
3
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous
A
Drain Current
Pulsed (Note 2)
I
DM
6
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
76
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
2.1
140
36
Power Dissipation
P
D
TO-220F/TO-220F1
TO-251/TO-252
W
50
W
Junction Temperature
Storage Temperature
T
J
+150
°
С
T
STG
-55 ~ +150
°
С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, I
AS
=3.9A, V
DD
=50V, R
G
=25
Ω
, Starting T
J
= 25°C
4. I
SD
≤
3.0A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
Junction to Case
TO-220F1
θ
JA
TO-251/TO-252
TO-220
110
0.89
3.47
2.5
°C/W
°C/W
°C/W
°C/W
θ
JC
TO-220F/TO-220F1
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-562.A
3N100-C
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V, I
D
=250
μ
A
1000
V
V
DS
=1000V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
10
μ
A
I
GSS
±100 nA
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250
μ
A
3.0
5.0
5.8
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
V
GS
=10V, I
D
=1.5A
Ω
C
ISS
C
OSS
C
RSS
530
60
6
pF
pF
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
15
5
nC
nC
nC
ns
ns
ns
ns
V
DS
=800V, V
GS
=10V, I
D
=3A
I
G
=1mA (Note 1, 2)
Gate-Drain Charge
3.5
9
Turn-On Delay Time (Note 1)
Turn-On Rise Time
V
DD
=100V, V
GS
=10V, I
D
=3A,
R
G
=25
Ω
(Note 1, 2)
17
46
35
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
3
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
6
Drain-Source Diode Forward Voltage (Note 1)
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
V
SD
t
rr
I
S
=3.0A, V
GS
=0V
I
S
=3.0A, V
GS
=0V,
dI
F
/dt=100A/µs
1.4
V
628
4
nS
μ
C
Q
rr
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
4 of 9
QW-R205-562.A
3N100-C
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
Gate Pulse Width
D=
V
GS
Gate Pulse Period
10V
(Driver)
I
FM
, Body Diode Forward Current
I
SD
di/dt
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-562.A
3N100-C
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-562.A
3N100-C
Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R205-562.A
3N100-C
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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QW-R205-562.A
3N100-C
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R205-562.A
