UTC-Unisonic-Tech-40N15L-TF1-T
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UNISONIC TECHNOLOGIES CO., LTD
40N15
Power MOSFET
40A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
40N15
is a N-channel enhancement MOSFET, it uses
UTC’s advanced technology to provide the customers with perfect
DS(ON)
, high switching speed, high current capacity and low gate
charge.
R
FEATURES
* R
DS(ON)
< 50m
Ω
@ V
GS
=10V, I
D
=20A
* High Switching Speed
* High Current Capacity
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
40N15L-TA3-T
40N15L-TF1-T
40N15L-TF2-T
40N15G-TA3-T
40N15G-TF1-T
40N15G-TF2-T
TO-220
TO-220F1
TO-220F2
G
G
G
Tube
Tube
Tube
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
MARKING
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-882.D
40N15
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
150
±25
V
Continuous
40
A
Drain Current
Pulsed
I
DM
180
A
Avalanche Current
Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
I
AR
45.6
650
A
Single Pulsed
Repetitive
E
AS
mJ
mJ
V/ns
W
E
AR
21
dv/dt
7
TO-220
166
P
D
TO-220F1/TO-220F2
40
W
Junction Temperature
T
J
-50 ~ +150
-50 ~ +150
°C
°C
Storage Temperature Range
T
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θ
JA
TO-220
0.9
θ
JC
TO-220F1/TO-220F2
3.125
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250µA
V
GS
=0V, V
DS
=150V
V
GS
=+20V, V
DS
=0V
150
V
900
nA
Forward
Reverse
+100 nA
-100 nA
Gate-Source Leakage Current
I
GSS
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=20A
2.2
3.8
50
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
m
ꢀ
C
ISS
C
OSS
C
RSS
2500
520
pF
pF
pF
V
DS
=25V, V
GS
=0V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
100
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
85
15
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DD
=50V,
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
I
D
=1.3A, I
G
=100µA
41
35
V
GS
=0~10V, V
DD
=30V,
I
D
=0.5A, R
G
=25
ꢀ
320
210
200
Turn-OFF Delay Time
Fall-Time
t
D(OFF)
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
S
40
A
A
I
SM
160
1.48
V
SD
t
RR
I
S
=40A, V
GS
=0V
V
GS
=0V, I
S
=30A
dI
F
/d
t
=100A/µs
V
150
0.9
ns
µC
Q
RR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-882.D
40N15
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-882.D
