UTC-Unisonic-Tech-4N60L-B-TM3-T
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UNISONIC TECHNOLOGIES CO., LTD
4N60
Power MOSFET
4A, 600V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 2.5
Ω
@ V
GS
= 10 V, I
D
= 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
1 of 9
Copyright © 2017 Unisonic Technologies Co., Ltd
QW-R502-061.AA
4N60
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
4N60G-TA3-T
4N60G-TF1-T
4N60G-TF2-T
4N60G-TF3-T
4N60G-TF3T-T
4N60G-TM3-T
4N60G-TMS-T
4N60G-TN3-R
4N60G-TND-R
4N60G-T2Q-T
4N60G-TQ2-T
4N60G-TQ2-R
4N60G-K08-5060-R
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
4
–
5
–
6
–
7
–
8
–
4N60L-TA3-T
4N60L-TF1-T
4N60L-TF2-T
4N60L-TF3-T
4N60L-TF3T-T
4N60L-TM3-T
4N60L-TMS-T
4N60L-TN3-R
4N60L-TND-R
4N60L-T2Q-T
4N60L-TQ2-T
4N60L-TQ2-R
4N60G-K08-5060-R
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
G
S
D
D
D
D
D
D
D
D
D
D
D
D
S
Tube
Tube
–
–
–
–
–
–
–
–
–
–
Tube
–
–
–
–
–
Tube
–
–
–
–
–
Tube
–
–
–
–
–
Tube
–
–
–
–
–
TO-251S
TO-252
Tube
–
–
–
–
–
Tape Reel
Tape Reel
Tube
–
–
–
–
–
TO-252D
TO-262
–
–
–
–
–
–
–
–
–
–
TO-263
Tube
–
–
–
–
–
TO-263
Tape Reel
Tape Reel
DFN5060-8
G
D
D
D
D
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
MARKING
PACKAGE
MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
TO-262
TO-263
DFN5060-8
UNISONIC TECHNOLOGIES CO., LTD
2 of 9
QW-R502-061.AA
4N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
I
D
4.0
A
Drain Current
Pulsed (Note 2)
I
DM
16
A
Single Pulsed (Note 3)
Repetitive (Note 2)
E
AS
260
mJ
mJ
V/ns
Avalanche Energy
E
AR
10.6
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
dv/dt
106
TO-220F/TO-220F1
TO-220F3
36
38
50
Power Dissipation
P
D
W
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
DFN5060-8
30
Junction Temperature
Operating Temperature
Storage Temperature
T
J
+150
°
С
°
С
°
С
T
OPR
T
STG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
= 25°C
4. I
SD
≤
4.4A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
62.5
UNIT
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
TO-252/TO-252D
DFN5060-8
Junction to Ambient
θ
JA
°
С
/W
110
75
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
1.18
3.47
3.28
2.5
Junction to Case
θ
JC
°
С
/W
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
DFN5060-8
4.17
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-061.AA
4N60
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125°
С
V
GS
= 30V, V
DS
= 0V
600
V
10
μ
A
Drain-Source Leakage Current
Gate-Source Leakage Current
100 µA
100 nA
-100 nA
V/°
С
Forward
Reverse
I
GSS
V
GS
= -30V, V
DS
= 0V
△
BV
DSS
/
△
T
J
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
I
D
=250
μ
A,Referenced to 25°C
0.6
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
4.0
1.9 2.5
V
V
GS
= 10 V, I
D
= 2.2A
Ω
C
ISS
C
OSS
C
RSS
550 670
pF
80 100 pF
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
30
50
pF
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
80 100 nC
V
V
DS
= 480V,I
D
= 4.0A,
GS
= 10V (Note 1, 2)
Gate-Source Charge
5
nC
nC
ns
Gate-Drain Charge
20
35
Turn-On Delay Time
55
Turn-On Rise Time
V
DD
= 300V, I
D
= 4.0A,
R
G
= 25
Ω
(Note 1, 2)
80 110 ns
160 200
ns
120 150
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
4.4
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
17.6
1.4
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
SD
t
rr
V
GS
= 0V, I
S
= 4.4A
V
V
GS
= 0 V, I
S
= 4.4A,
dI
F
/dt = 100 A/
μ
s (Note 1)
250
1.5
ns
μ
C
Reverse Recovery Charge
Q
rr
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-061.AA
4N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-061.AA
4N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
10%
V
GS
t
D(ON)
t
D(OFF)
t
F
t
R
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-061.AA
4N60
Power MOSFET
TYPICAL CHARACTERISTICS
On-State Characteristics
Transfer Characteristics
V
GS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V
Bottorm:5.0V
25°
С
1
5.0V
150°
С
1
0.1
Notes:
Notes:
1. V
DS
=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. T
C
=25
°
С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, V
GS
(V)
Drain-to-Source Voltage, V
DS
(V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-061.AA
4N60
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
C
iss=
C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
V
DS
=300V
V
DS
=480V
1000
800
C
iss
Notes:
1. V
GS
=0V
V
DS
=120V
C
oss
6
600
400
200
2. f = 1MHz
4
2
C
rss
Note: I
D
=4A
10
Total Gate Charge, Q
G
(nC)
0
0
0.1
20
25
0
5
15
1
10
Drain-SourceVoltage, V
DS
(V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-061.AA
4N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
9 of 9
QW-R502-061.AA
