UTC-Unisonic-Tech-4N65KG-TC-TN3-R

UNISONIC TECHNOLOGIES CO., LTD  

4N65K-TC  

Power MOSFET  

4A, 650V

 

N-CHANNEL  

POWER MOSFET  



DESCRIPTION  

The UTC

4N65K-TC

is a high voltage power MOSFET  

designed to have better characteristics, such as fast switching  

time, low gate charge, low on-state resistance and have a high  

rugged avalanche characteristic. This power MOSFET is usually  

used in high speed switching applications including power  

supplies, PWM motor controls, high efficient AC to DC  

converters and bridge circuits.  



FEATURES  

* R

DS(ON)

≤

2.5

Ω

@ V

GS

=10V, I

D

=2.0A  

* Fast Switching Capability  

* Avalanche Energy Specified  

* Improved dv/dt Capability, High Ruggedness  



SYMBOL  



ORDERING INFORMATION  

Ordering Number  

Pin Assignment  

Package  

Packing  

Lead Free  

Halogen Free  

1

2

D

D

D

D

D

D

D

D

3

S

S

S

S

S

S

S

S

4N65KL-TA3-T  

4N65KL-TF1-T  

4N65KL-TF2-T  

4N65KL-TF3-T  

4N65KL-TF3T-T  

4N65KL-TM3-T  

4N65KL-TMS2-T  

4N65KL-TN3-R  

4N65KG-TA3-T  

4N65KG-TF1-T  

4N65KG-TF2-T  

4N65KG-TF3-T  

4N65KG-TF3T-T  

4N65KG-TM3-T  

4N65KG-TMS2-T  

4N65KG-TN3-R  

TO-220  

TO-220F1  

TO-220F2  

TO-220F  

TO-220F3  

TO-251  

Tube  

Tube  

G

G

G

G

G

G

G

G

Tube  

Tube  

Tube  

Tube  

TO-251S2  

TO-252  

Tube  

Tape Reel  

Note: Pin

 

Assignment: G: Gate  

D: Drain  

S: Source  

1 of 8  

Copyright © 2019 Unisonic Technologies Co., Ltd  

QW-R205-104.G  

4N65K-TC  

Power MOSFET  



MARKING  

UNISONIC TECHNOLOGIES CO., LTD  

2 of 8  

QW-R205-104.G  

4N65K-TC  

Power MOSFET  



ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°

С

, unless otherwise specified)  

PARAMETER  

SYMBOL  

V

DSS  

V

GSS  

I

D  

RATINGS  

650  

UNIT  

V

Drain-Source Voltage  

Gate-Source Voltage  

±30  

V

Continuous  

4.0  

A

Drain Current  

Pulsed (Note2)  

Single Pulsed (Note3)  

I

DM  

16  

A

Avalanche Energy  

E

AS  

113  

mJ  

V/ns  

W

Peak Diode Recovery dv/dt (Note4)  

TO-220  

dv/dt  

3.79  

106  

TO-220F/TO-220F1  

36  

W

Power Dissipation  

Derate above 25°C  

TO-220F2/TO-220F3  

TO-251/TO-251S  

TO-251S2/TO-252  

TO-220  

50  

W

P

D  

0.84  

0.29  

W/°C  

W/°C  

TO-220F/TO-220F1  

TO-220F2/TO-220F3  

TO-251/TO-251S  

TO-251S2/TO-252  

0.40  

W/°C  

Junction Temperature  

Operating Temperature  

Storage Temperature  

T

J  

+150  

°

С  

°

С  

°

С  

T

OPR  

T

STG  

-55 ~ +150  

-55 ~ +150  

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  

Absolute maximum ratings are stress ratings only and functional device operation is not implied.  

2. Repetitive Rating : Pulse width limited by maximum junction temperature  

3. L=25mH, I

AS

=3.0A, V

DD

=50V, R

G

=25

Ω

, Starting T

J

= 25°C  

4. I

SD

≤

4.0A, di/dt

≤

200A/

μ

s, V

DD

≤

BV

DSS

, Starting T

J

= 25°C  



THERMAL DATA  

PARAMETER  

TO-220/TO-220F  

SYMBOL  

RATINGS  

62.5  

UNIT  

°C/W  

TO-220F1/TO-220F2  

TO-220F3  

Junction to Ambient  

Junction to Case  

θ

JA  

TO-251/TO-251S  

TO-251S2/TO-252  

TO-220  

83  

1.18  

°C/W  

°C/W  

°C/W  

°C/W  

°C/W  

TO-220F/TO-220F1  

TO-220F3  

3.4  

θ

JC  

TO-220F2  

3.57  

TO-251/TO-251S  

TO-251S2/TO-252  

2.5 (Note)  

Note: The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

UNISONIC TECHNOLOGIES CO., LTD  

3 of 8  

QW-R205-104.G  

4N65K-TC  

Power MOSFET  



ELECTRICAL CHARACTERISTICS

(T

C

=25°

С

, unless otherwise specified)  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

MIN TYP

 

MAX UNIT  

OFF CHARACTERISTICS  

Drain-Source Breakdown Voltage  

Drain-Source Leakage Current  

BV

DSS  

I

DSS  

V

GS

= 0 V, I

D

= 250

μ

A  

650  

V

V

DS

= 650 V, V

GS

= 0 V  

V

GS

= 30 V, V

DS

= 0 V  

10  

μ

A  

Forward  

Reverse  

100 nA  

-100 nA  

V/°

С  

Gate-Source Leakage Current  

I

GSS  

V

GS

= -30 V, V

DS

= 0 V  

I

D

=250

μ

A, Referenced to 25°C  

△

BV

DSS

/

△

T

J  

Breakdown Voltage Temperature Coefficient  

ON CHARACTERISTICS  

Gate Threshold Voltage  

Static Drain-Source On-State Resistance  

DYNAMIC CHARACTERISTICS  

Input Capacitance  

0.6  

V

GS(TH)  

R

DS(ON)  

V

DS

= V

GS

, I

D

= 250

μ

A  

2.0  

4.0  

V

V

GS

= 10 V, I

D

= 2.0A  

2.2 2.5  

Ω

C

ISS  

C

OSS  

C

RSS  

600  

53.8  

3.2  

pF  

pF  

pF  

V

DS

=25V, V

GS

=0V, f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING CHARACTERISTICS  

Total Gate Charge  

Q

G  

Q

GS  

Q

GD  

t

D(ON)  

t

R  

13  

3.6  

2

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

DS

=100V, V

GS

=10V, I

D

=3.0A  

Gate-Source Charge  

I

G

= 1mA (Note1, 2)  

Gate-Drain Charge  

Turn-On Delay Time  

30  

10  

60  

50  

Turn-On Rise Time  

V

DS

=100V, V

GS

=10V, I

D

=2.0A,  

R

G

=25

Ω

(Note1, 2)  

Turn-Off Delay Time  

t

D(OFF)  

t

F  

Turn-Off Fall Time  

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  

Maximum Continuous Drain-Source Diode  

Forward Current  

I

S  

4.0  

16  

A

A

Maximum Pulsed Drain-Source Diode  

Forward Current  

I

SM  

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

V

SD  

t

rr  

V

GS

= 0 V, I

S

= 4.0A  

V

GS

= 0V, I

S

= 4.0A,  

dI

F

/ dt =100A/

μ

s (Note 1)  

1.4  

230  

V

nS  

μ

C  

Reverse Recovery Charge  

Q

rr  

1.6  

Notes: 1. Pulse Test: Pulse width

≤

300

μ

s, Duty cycle

≤

2%.  

2. Essentially independent of operating temperature.  

UNISONIC TECHNOLOGIES CO., LTD  

4 of 8  

QW-R205-104.G  

4N65K-TC  

Power MOSFET  



TEST CIRCUITS AND WAVEFORMS  

Peak Diode Recovery dv/dt Test Circuit  

P. W.  

Period  

V

GS  

(Driver)  

Period  

D=  

P.W.  

10V  

=

V

GS  

I

FM

, Body Diode Forward Current  

I

SD  

(D.U.T.)  

di/dt  

I

RM  

Body Diode Reverse Current  

Body Diode Recovery dv/dt  

V

DS  

V

DD  

(D.U.T.)  

Body Diode  

Forward Voltage Drop  

Peak Diode Recovery dv/dt Waveforms  

UNISONIC TECHNOLOGIES CO., LTD  

5 of 8  

QW-R205-104.G  

4N65K-TC  

Power MOSFET  



TEST CIRCUITS AND WAVEFORMS  

R

L  

V

DS  

V

DD  

V

GS  

R

G  

D.U.T.  

Pulse Width

≤

1

μ

s  

Duty Factor

≤

0.1%  

Switching Test Circuit  

Switching Waveforms  

Gate Charge Test Circuit  

Gate Charge Waveform  

BV

DSS  

I

AS  

I

D(t)  

V

DS(t)  

V

DD  

Time  

Unclamped Inductive Switching Waveforms  

t

p  

Unclamped Inductive Switching Test Circuit  

UNISONIC TECHNOLOGIES CO., LTD  

6 of 8  

QW-R205-104.G  

4N65K-TC  

Power MOSFET  



TYPICAL CHARACTERISTICS  

UNISONIC TECHNOLOGIES CO., LTD  

7 of 8  

QW-R205-104.G  

4N65K-TC  

Power MOSFET  



TYPICAL CHARACTERISTICS (Cont.)  

UTC assumes no responsibility for equipment failures that result from using products at values that  

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  

parameters) listed in products specifications of any and all UTC products described or contained herein.  

UTC products are not designed for use in life support appliances, devices or systems where malfunction  

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  

make changes to information published in this document, including without limitation specifications and  

product descriptions, at any time and without notice.

 

This document supersedes and replaces all  

information supplied prior to the publication hereof.  

UNISONIC TECHNOLOGIES CO., LTD  

8 of 8  

QW-R205-104.G