UTC-Unisonic-Tech-4N65KL-TN3-R
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UNISONIC TECHNOLOGIES CO., LTD
4N65K-MT
Power MOSFET
4.0A, 650V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N65K-MT
is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* R
DS(ON)
< 2.5
Ω
@ V
GS
= 10 V, I
D
= 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1 of 9
Copyright © 2016 Unisonic Technologies Co., Ltd
QW-R502-B21.H
4N65K-MT
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
4N65KG-TA3-T
4N65KG-TF3-T
4N65KG-TF1-T
4N65KG-TF2-T
4N65KG-TF3T-T
4N65KG-TM3-T
4N65KG-TMS-T
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
4N65KL-TA3-T
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
4N65KL-TF3-T
4N65KL-TF1-T
Tube
4N65KL-TF2-T
Tube
4N65KL-TF3T-T
4N65KL-TM3-T
4N65KL-TMS-T
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
4N65KL-TMS2-T
4N65KL-TMS4-T
4N65KG-TMS2-T
4N65KG-TMS4-T
4N65KG-TN3-R
4N65KG-TND-R
4N65KG-T2Q-T
Tube
Tube
4N65KL-TN3-R
Tape Reel
Tape Reel
Tube
4N65KL-TND-R
TO-252D
TO-262
4N65KL-T2Q-T
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
4N65K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
650
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous
4.0
A
Drain Current
Pulsed (Note2)
Single Pulsed (Note3)
I
DM
16
A
Avalanche Energy
E
AS
200
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note4)
TO-220/TO-262
dv/dt
2.63
106
TO-220F
34
W
TO-220F1/TO-220F2
TO-220F3
36
W
Power Dissipation
P
D
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
50
W
Junction Temperature
Operating Temperature
Storage Temperature
T
J
+150
°
С
°
С
°
С
T
OPR
T
STG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=25mH, I
AS
=4A, V
DD
=50V, R
G
=25
Ω
, Starting T
J
= 25°C
4. I
SD
≤
4.4A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-220/TO-262
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220/TO-262
Junction to Ambient
θ
JA
110
°C/W
1.18
3.47
3.67
3.57
°C/W
°C/W
°C/W
°C/W
TO-220F/TO-220F1
TO-220F3
Junction to Case
θ
JC
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
2.5
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
4N65K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
= 0 V, I
D
= 250
μ
A
650
V
V
DS
= 650 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
10
μ
A
Forward
Reverse
100 nA
-100 nA
V/°
С
Gate-Source Leakage Current
I
GSS
V
GS
= -30 V, V
DS
= 0 V
I
D
=250
μ
A, Referenced to 25°C
△
BV
DSS
/
△
T
J
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
4.0
1.77 2.50
V
V
GS
= 10 V, I
D
= 2.2A
Ω
C
ISS
C
OSS
C
RSS
430 750
pF
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
60
6
90
11
pF
pF
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
17
20
nC
nC
nC
ns
V
DS
=50V, V
GS
=10V,
Gate-Source Charge
4.9 5.5
3.7 4.2
I
D
=1.3A, I
G
=100
μ
A (Note 1, 2)
Gate-Drain Charge
Turn-On Delay Time
44
60
Turn-On Rise Time
V
DD
=30V, V
GS
=10V, I
D
=0.5A,
R
G
=25
Ω
(Note 1, 2)
50 100 ns
80 130 ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
45
70
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
4.4
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
17.6
1.4
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
SD
t
rr
I
S
=4.4A, V
GS
=0V
I
S
=4.4A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
V
410
ns
µC
Q
rr
2.12
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
4N65K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
4N65K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DS
V
DD
V
GS
R
G
D.U.T.
10V
Pulse Width
≤
1
μ
s
Duty Factor
≤
0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
Unclamped Inductive Switching Waveforms
t
p
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
4N65K-MT
Power MOSFET
TYPICAL CHARACTERISTICS6
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
4N65K-MT
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
4N65K-MT
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B21.H
