UTC-Unisonic-Tech-4N65L-ML-TF3-T

UNISONIC TECHNOLOGIES CO., LTD  

4N65-ML  

Power MOSFET  

4.0A, 650V

 

N-CHANNEL  

POWER MOSFET  



DESCRIPTION  

The UTC

4N65-ML

is a high voltage power MOSFET combines  

advanced trench MOSFET designed to have better characteristics,  

such as fast switching time, low gate charge, low on-state  

resistance and high rugged avalanche characteristics. This power  

MOSFET is usually used in high speed switching applications of  

switching power supplies and adaptors.  



FEATURES  

* R

DS(ON)

≤

2.6

Ω

@ V

GS

=10V, I

D

=2.0A  

* Fast switching capability  

* Avalanche energy tested  

* Improved dv/dt capability, high ruggedness  



SYMBOL  

1 of 9  

Copyright © 2022 Unisonic Technologies Co., Ltd  

QW-R205-637.E  

4N65-ML  

Power MOSFET  



ORDERING INFORMATION  

Ordering Number  

Pin Assignment  

Package  

Packing  

1

2

3

S

S

S

S

S

S

S

S

S

S

4

–

5

–

6

–

7

–

8

–

Lead Free  

4N65L-TF1-T  

Halogen Free  

4N65G-TF1-T  

4N65G-TF2-T  

4N65G-TF3-T  

4N65G-TF3T-T  

4N65G-TM3-T  

4N65G-TN3-R  

4N65G-T2Q-T  

4N65G-TQ2-T  

4N65G-TQ2-R  

4N65G-P5060-R  

TO-220F1  

TO-220F2  

TO-220F  

TO-220F3  

TO-251  

G

G

G

G

G

G

G

G

G

S

D

D

D

D

D

D

D

D

D

S

Tube  

Tube  

–

–

–

–

–

4N65L-TF2-T  

–

–

–

–

–

4N65L-TF3-T  

Tube  

4N65L-TF3T-T  

4N65L-TM3-T  

–

–

–

–

–

Tube  

–

–

–

–

–

Tube  

–

–

–

–

–

4N65L-TN3-R  

TO-252  

Tape Reel  

Tube  

–

–

–

–

–

4N65L-T2Q-T  

TO-262  

–

–

–

–

–

Tube  

4N65L-TQ2-T  

TO-263  

–

–

–

–

–

4N65L-TQ2-R  

TO-263  

Tape Reel  

Tape Reel  

G

D

D

D

D

4N65L-P5060-R  

Note: Pin

 

Assignment: G: Gate  

PDFN5×6  

D: Drain  

S: Source  



MARKING  

TO-220F/TO-220F1/TO-220F2/TO-220F3  

TO-251/TO-252/TO-262/TO-263  

PDFN5×6  

UNISONIC TECHNOLOGIES CO., LTD  

2 of 9  

QW-R205-637.E  

4N65-ML  

Power MOSFET  



ABSOLUTE MAXIMUM RATINGS

(T

C

=25°C, unless otherwise specified)  

PARAMETER  

SYMBOL  

V

DSS  

V

GSS  

I

D  

RATINGS  

UNIT  

V

Drain-Source Voltage  

Gate-Source Voltage  

650  

±30  

4

V

Continuous Drain Current  

Pulsed Drain Current (Note 2)  

Avalanche Energy  

A

I

DM  

8

A

Single Pulsed (Note 3)  

E

AS  

173  

2.1  

mJ  

V/ns  

Peak Diode Recovery dv/dt (Note 4)  

TO-220F/TO-220F1  

dv/dt  

32  

W

TO-220F2/TO-220F3  

TO-251/TO-252  

TO-262/TO-263  

PDFN5×6  

49  

106  

W

W

W

°C  

°C  

Power Dissipation  

P

D  

30  

Junction Temperature  

Storage Temperature  

T

J  

+150  

T

STG  

-55 ~ +150  

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  

Absolute maximum ratings are stress ratings only and functional device operation is not implied.  

2. Repetitive Rating: Pulse width limited by maximum junction temperature.  

3. L = 30mH, I

AS

= 3.4A, V

DD

= 50V, R

G

= 25

Ω

, Starting T

J

= 25°C  

4. I

SD

≤

4.0A, di/dt

≤

200A/

μ

s, V

DD

≤

BV

DSS

, Starting T

J

= 25°C  



THERMAL DATA  

PARAMETER  

TO-220F/TO-220F1  

SYMBOL  

RATINGS  

62.5  

UNIT  

°C/W  

TO-220F2/TO-220F3  

TO-262/TO-263  

TO-251/TO-252  

PDFN5×6  

Junction to Ambient  

Junction to Case  

θ

JA  

110  

75  

°C/W  

°C/W  

TO-220F/TO-220F1  

TO-220F2/TO-220F3  

TO-251/TO-252  

TO-262/TO-263  

PDFN5×6  

3.9  

°C/W  

2.55 (Note)  

1.17  

°C/W  

°C/W  

°C/W  

θ

JC  

4.17  

Note: Device mounted on FR-4 substrate P

C

board, 2oz copper, with 1inch square copper plate.  

UNISONIC TECHNOLOGIES CO., LTD  

3 of 9  

QW-R205-637.E  

4N65-ML  

Power MOSFET  



ELECTRICAL CHARACTERISTICS

(T

J

=25°C, unless otherwise specified)  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

MIN TYP

 

MAX UNIT  

OFF CHARACTERISTICS  

Drain-Source Breakdown Voltage  

Drain-Source Leakage Current  

BV

DSS  

I

DSS  

V

GS

=0V, I

D

=250

μ

A  

V

DS

=650V, V

GS

=0V  

V

GS

=30V, V

DS

=0V  

V

GS

=-30V, V

DS

=0V  

650  

2.0  

V

10  

μ

A  

nA  

Forward  

Reverse  

100  

Gate- Source Leakage Current  

I

GSS  

-100 nA  

ON CHARACTERISTICS  

Gate Threshold Voltage  

V

GS(TH)

V

DS

=V

GS

, I

D

=250

μ

A  

4.0  

2.6  

V

Static Drain-Source On-State Resistance  

DYNAMIC CHARACTERISTICS  

Input Capacitance  

R

DS(ON)

V

GS

=10V, I

D

=2.0A  

Ω

C

ISS  

560  

55  

5

pF  

pF  

pF  

Output Capacitance  

C

OSS  

C

RSS  

V

Reverse Transfer Capacitance  

SWITCHING CHARACTERISTICS  

Total Gate Charge (Note 1)  

Gate-Source Charge  

Q

G  

Q

GS  

Q

GD  

t

D(ON)  

t

R  

13  

4

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

I

G

=1mA (Note 1, 2)  

Gate-Drain Charge  

2.2  

7

Turn-On Delay Time (Note 1)  

Turn-On Rise Time  

16  

36  

22  

V

DS

=100V, V

GS

=10V, I

D

=4A,  

R

G

=25

Ω

(Note 1, 2)  

Turn-Off Delay Time  

t

D(OFF)  

t

F  

Turn-Off Fall Time  

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  

Maximum Body-Diode Continuous Current  

Maximum Body-Diode Pulsed Current  

Drain-Source Diode Forward Voltage (Note 1)  

Reverse Recovery Time (Note 1)  

I

S  

I

SM  

V

SD  

t

rr  

4

8

A

A

I

S

=4A , V

GS

=0V  

I

S

=4A , V

GS

=0V  

di/dt=100A/

μ

s  

1.4  

V

250  

4.5  

ns  

μ

C  

Reverse Recovery Charge  

Q

rr  

Notes: 1. Pulse Test: Pulse width

≤

300

μ

s, Duty cycle

≤

2%.  

2. Essentially independent of operating temperature.  

UNISONIC TECHNOLOGIES CO., LTD  

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QW-R205-637.E  

4N65-ML  

Power MOSFET  



TEST CIRCUITS AND WAVEFORMS  

+

D.U.T.  

V

DS  

–

+

–

I

SD  

L

R

G  

Driver  

V

DD  

* dv/dt controlled by R

G  

* I

SD

controlled by pulse period  

* D.U.T.-Device Under Test  

Same Type  

as D.U.T.  

V

GS  

Peak Diode Recovery dv/dt Test Circuit  

P. W.  

Period  

V

GS  

(Driver)  

Period  

D=  

P.W.  

10V  

=

V

GS  

I

FM

, Body Diode Forward Current  

I

SD  

(D.U.T.)  

di/dt  

I

RM  

Body Diode Reverse Current  

Body Diode Recovery dv/dt  

V

DS  

V

DD  

(D.U.T.)  

Body Diode  

Forward Voltage Drop  

Peak Diode Recovery dv/dt Waveforms  

UNISONIC TECHNOLOGIES CO., LTD  

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QW-R205-637.E  

4N65-ML  

Power MOSFET  



TEST CIRCUITS AND WAVEFORMS  

V

DS  

90%  

10%  

V

GS  

t

D(ON)  

t

D(OFF)  

t

F  

t

R  

Switching Test Circuit  

Switching Waveforms  

Gate Charge Test Circuit  

Gate Charge Waveform  

Unclamped Inductive Switching Test Circuit  

Unclamped Inductive Switching Waveforms  

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QW-R205-637.E  

4N65-ML  

Power MOSFET  



TYPICAL CHARACTERISTICS  

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QW-R205-637.E  

4N65-ML  

Power MOSFET  



TYPICAL CHARACTERISTICS (Cont.)  

UNISONIC TECHNOLOGIES CO., LTD  

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QW-R205-637.E  

4N65-ML  

Power MOSFET  



TYPICAL CHARACTERISTICS (Cont.)  

UTC assumes no responsibility for equipment failures that result from using products at values that  

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  

parameters) listed in products specifications of any and all UTC products described or contained herein.  

UTC products are not designed for use in life support appliances, devices or systems where malfunction  

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  

make changes to information published in this document, including without limitation specifications and  

product descriptions, at any time and without notice.

 

This document supersedes and replaces all  

information supplied prior to the publication hereof.  

UNISONIC TECHNOLOGIES CO., LTD  

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QW-R205-637.E